Abstract: A silicon single crystal manufacturing apparatus which pulls a large-diameter silicon single crystal with improved yield and efficiency according to the rotary CZ method.As a means of preventing the solidification of molten silicon in the vicinity of a partition member, that is, one of factors which deteriorate the yield and efficiency, a heat shielding member having a predetermined position and shielding width is arranged to face a meniscus position of molten silicon thereby shielding the heat radiation from the meniscus portion.Its shape is a cylindrical shape, truncated-cone shape or a shape formed at its cylindrical bottom with a flange having a central opening.Its material primarily consists of a metal such as molybdenum or tantalum or an electric resistance heater.

Abstract: According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10.degree. C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.

Abstract: The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.

Abstract: Method for manufacturing a large columner silicon single crystal having a diameter of 12 cm-30 cm by pulling up a crystal, growing, and rotating it in one direction, from molten silicon material in a quartz crucible rotating in the other direction. The inside of the quartz crucible is divided into two sections--the peripheral section for feeding and melting raw materials and the central section for growing and pulling the crystal--by means of a cylindrical partition. The material feeding and melting section and the partition are sufficiently covered by an insulating board to reduce radiant energy heat loss and to keep the temperature at least above the freezing point of the molten materials in order to prevent the molten materials from solidifying at or around the inner wall of the cylindrical partition.

Abstract: A silicon single crystal manufacturing apparatus in which a partition member formed with at least one small hole through its lower part is arranged in a rotating quartz crucible so as to surround a large cylindrical silicon single crystal which is rotated and pulled. The whole or part of the partition member is made from cellular silica glass whose cell content (volume percentage) is between 0.01 and 15% or less than 0.01% but increased to 0.01 through 15% by the heat used for melting starting silicon material. Thus, the molten material contacting with the inside of the partition member is prevented from decreasing in temperature and solidification of the molten material from this portion is prevented.

Abstract: An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.

Abstract: A magnetic medium for magnetic embossment comprises a main magnetic layer and a high permeability magnetic-metal layer, a nonmagnetic white metal layer and a coloring layer laminated on the main magnetic layer.A magnetic card comprises a card substrate which is nonmagnetic, and a magnetic medium for magnetic embossment disposed on at least a part of the card substrate, which magnetic medium comprises a main magnetic layer and a high permeability magnetic-metal layer, a nonmagnetic white metal layer and a coloring layer laminated on the main magnetic layer.

Abstract: An apparatus for continuously cooling a heated metal plate lying horizontally, which comprises: an upper cooling water ejecting means, arranged above the metal plate in parallel to the width direction thereof, for ejecting cooling water onto the upper surface of the metal plate; a water tank, arranged below the metal plate, for receiving cooling water; and a lower cooling water ejecting means having a lower cooling water ejecting bore, arranged in the water tank in parallel to the width direction of the metal plate. The lower cooling water ejecting means ejects, in the form of a jet stream, cooling water from the lower cooling water ejecting bore together with cooling water received in the water tank, onto the lower surface of the metal plate. The above-mentioned jet stream is surrounded by a jet stream guide duct arranged between the lower cooling water ejecting means and the lower surface of the metal plate.

Abstract: A method and an apparatus for cooling a steel sheet, which comprises: ejecting cooling water onto a steel sheet laid horizontally from above and from below said steel sheet immediately after the completion of hot rolling to cool said steel sheet; shielding each of the both side edge portions of the upper surface in the width direction of said steel sheet from said ejected cooling water by a shielding means movable in the width direction of said steel sheet so that the temperature distribution in the width direction of said steel sheet becomes uniform at the completion of the ejection of cooling water; and, determining a shielding width of each of said both side edge portions of said steel sheet, which is shielded from said ejected cooling water, on the basis of the width and the thickness of said steel sheet, the temperature and the flow rate per unit area of cooling water ejected onto the upper and the lower surfaces of said steel sheet, the period of time from start to completion of the ejection of cooling