Patents by Inventor Hiroshi Kanekiyo
Hiroshi Kanekiyo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7686917Abstract: A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.Type: GrantFiled: July 19, 2007Date of Patent: March 30, 2010Assignee: Hitachi, Ltd.Inventors: Toshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
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Publication number: 20080011422Abstract: A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.Type: ApplicationFiled: July 19, 2007Publication date: January 17, 2008Inventors: Toshio MASUDA, Tatehito USUI, Mitsuru SUEHIRO, Hiroshi KANEKIYO, Hideyuki YAMAMOTO, Kazue TAKAHASHI, Hiromichi ENAMI
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Patent number: 7169254Abstract: A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.Type: GrantFiled: December 11, 2003Date of Patent: January 30, 2007Assignee: Hitachi, Ltd.Inventors: Toshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
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Patent number: 6923885Abstract: A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.Type: GrantFiled: December 11, 2003Date of Patent: August 2, 2005Assignee: Hitachi, Ltd.Inventors: Toshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
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Patent number: 6914005Abstract: A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.Type: GrantFiled: March 1, 2002Date of Patent: July 5, 2005Assignee: Hitachi High-Technologies CorporationInventors: Muneo Furuse, Mitsuru Suehiro, Hiroshi Kanekiyo, Kunihiko Koroyasu, Tomoyuki Tamura
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Publication number: 20040177925Abstract: A plasma processing apparatus includes a processing chamber, a sample bench in the processing chamber mounting a wafer thereon, a plate having a plurality of through holes including discharge holes through which a processing gas flows into the processing chamber, the plate being disposed in an upper portion of the processing chamber, and a member in the upper portion of the processing chamber and provided with the plate on the side thereof facing the plasma. A light receiving unit is provided having an optical transmitter for transmitting therethrough a light from inside of the processing chamber having passed the through holes formed in the plate. The light receiving unit is attached to the member, and an end face of the optical transmitter is opposed to a back of the plate and the through holes so as to be in contact therewith or spaced therefrom by a minute gap.Type: ApplicationFiled: March 29, 2004Publication date: September 16, 2004Inventors: Toshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
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Patent number: 6755932Abstract: The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter.Type: GrantFiled: February 21, 2001Date of Patent: June 29, 2004Assignee: Hitachi, Ltd.Inventors: Toshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
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Publication number: 20040118518Abstract: A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.Type: ApplicationFiled: December 11, 2003Publication date: June 24, 2004Inventors: Toshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
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Publication number: 20040118517Abstract: A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.Type: ApplicationFiled: December 11, 2003Publication date: June 24, 2004Inventors: Toshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
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Publication number: 20030166343Abstract: A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.Type: ApplicationFiled: March 1, 2002Publication date: September 4, 2003Inventors: Muneo Furuse, Mitsuru Suehiro, Hiroshi Kanekiyo, Kunihiko Koroyasu, Tomoyuki Tamura
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Publication number: 20020179245Abstract: A maintenance method including performing a maintenance operation for a plasma processing apparatus having a vacuum vessel having a formed processing chamber inside, a plasma generation device for generating plasma in the processing chamber, and an electrode for holding a sample to be processed in the processing chamber. The plasma processing chamber is structured so that an upper wall of the vacuum vessel is an open-close part, and at least one of parts constituting the plasma generation device including a non-metallic brittle member is arranged in the open-close part, and at least one part of an upper wall constituting an upper side surface of the processing chamber is rotated around an almost horizontal axis and the open-close part can be held stably in a state that the open-close part on an inner side of the processing chamber is directed upward.Type: ApplicationFiled: July 25, 2002Publication date: December 5, 2002Inventors: Toshio Masuda, Hiroshi Kanekiyo, Tetsuo Fujimoto, Mitsuru Suehiro, Katsuji Matano, Kazue Takahashi
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Publication number: 20010015175Abstract: The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of an measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter.Type: ApplicationFiled: February 21, 2001Publication date: August 23, 2001Inventors: Toshio Masuda, Tatehito Usui, Mitsuru Suehiro, Hiroshi Kanekiyo, Hideyuki Yamamoto, Kazue Takahashi, Hiromichi Enami
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Patent number: 4367202Abstract: A centrifugal counter-flow liquid container contactor in which a light liquid and a heavy liquid are introduced into a rotary body fixed to a rotary shaft from the outer peripheral portion and the inner peripheral portion of the rotary body, respectively, so that the light liquid and heavy liquid make counter-flow contact with each other and, after the contact, the light liquid and heavy liquid are discharged from the inner peripheral portion and outer peripheral portion of the rotary body. Disc-shaped partition plates are disposed at both sides of radially extending pipes within the rotary body such as a light liquid introduction pipe, heavy liquid discharging pipe and so forth inserted into the rotary body, so as to separate these radial pipes from the region where the light and heavy liquids are mixed with each other.Type: GrantFiled: April 10, 1981Date of Patent: January 4, 1983Assignee: Hitachi, Ltd.Inventors: Kiyoshi Fujiwara, Masaru Fujimoto, Shoji Nomura, Hiroshi Kanekiyo, Shoji Yoshinaga
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Patent number: 4326666Abstract: A centrifugal type counterflow contact apparatus having a rotary body or drum intergrally mounted on a rotary shaft, and a plurality of ring members disposed within the rotary body such that circumferential slits are defined between the adjacent ring members in the axial direction of the rotary drum. The ring members have a cross sectional configuration inclined with respect to the axis of the rotary body. A light liquid is introduced into the periphery of the rotary body while a heavy liquid is introduced in the center portion of the rotary body. The heavy and light liquids flow countercurrently through the slits between the ring members under the centrifugal force produced by the rotation of the rotary body, whereby extractability can be improved and accumulation of solids entrained in the feed can be avoided.Type: GrantFiled: May 9, 1979Date of Patent: April 27, 1982Assignee: Hitachi, Ltd.Inventors: Kiyoshi Fujiwara, Katsuaki Nagatomo, Shoji Yoshinaga, Zensuke Tamura, Fumio Shibata, Hiroshi Kanekiyo