Abstract: An abnormality diagnosis device includes: a feature quantity calculation unit which calculates a plurality of feature quantities from the time-series data of the current values; an operation mode determination unit which determines an operation mode of a compressor on the basis of the load torque and the drive frequency; a feature quantity distribution generation unit which generates a feature quantity distribution from values of the plurality of feature quantities; a reference region generation unit which generates a reference region on the basis of the feature quantity distribution that is obtained in a normal case; and a determination unit which compares the feature quantity distribution that is obtained during an abnormality diagnosis and the reference region corresponding to the operation mode that is applied during the abnormality diagnosis, to determine whether an abnormality is present or absent in either of the compressor and the electric motor.

Abstract: Provided is a jig which assists in the adhesion of a thin-film sheet to an adhesion target surface (skin etc.), and which can easily adhere the thin-film sheet to the adhesion target surface. The jig includes: a base part having a first surface; and a porous hydrophilic film that is adhered to the first surface and has fine pores with a predetermined porosity, wherein the porosity is 35% to 55% inclusive. The hardness of the base part is preferably 4-20 inclusive. In addition, it is preferable that the base part and the hydrophilic film have transparency.

Abstract: A thin film affixing device used to affix a thin film to an adherend surface, such as the face of a user, is provided. The thin film affixing device is configured to include a main portion having a first surface and a second surface, where the first surface has a temporary adherend portion that allows the thin film to be temporarily attached thereto, a holding member that holds the main portion so that the first side is viewable from the second side through the main portion and the temporary adherend portion is capable of pressing against the adherend surface, and a transparent hydrophilic layer formed on the first surface of the main portion so as to serve as the temporary adherend portion.

Abstract: A thin film application device used to apply a thin film on an applied face of an application object includes a frame mountable to the application object, and a thin film holding member, that has a tentative application portion to which the thin film can be tentatively applied to a side face facing the applied face in use, and that is supported by the frame so that the tentative application portion can be pressed against the applied face, and that is detachably mountable to the frame.

Abstract: A thin film affixing device used to affix a thin film to an adherend surface, such as the face of a user, is provided. The thin film affixing device is configured to include a main portion having a first surface and a second surface, where the first surface has a temporary adherend portion that allows the thin film to be temporarily attached thereto, a holding member that holds the main portion so that the first side is viewable from the second side through the main portion and the temporary adherend portion is capable of pressing against the adherend surface, and a transparent hydrophilic layer formed on the first surface of the main portion so as to serve as the temporary adherend portion.

Abstract: To provide a water spouting device capable of switching between spouting and stopping, flow volume adjustment, and spouted water temperature adjustment with a single operating portion. The present invention is a water faucet device (1) furnished with a flow volume adjustment function and a temperature adjustment function, including: an operating portion (6) capable of being pressed and rotated by a user; and flow volume/temperature adjustment means (10), whereby in a stopped water state, spouting is commenced when the operating portion of this flow volume/temperature adjustment means is pressed; in a spouting state, spouted water flow volume is changed when the operating portion is pressed continuously for a predetermined long-press determining time; and water flow is stopped when pressing of the operating portion ceases in less than the long-press determining time.

Abstract: A water-and-hot-water mixing device includes a mixing valve unit which mixes hot water and water and discharges mixed water therefrom, an operation part which sets a predetermined temperature, a mixed water thermistor which detects a temperature of mixed water, a hot-water thermistor which detects a temperature of hot water supplied to the mixing valve unit, and a controller which performs a feedback control of a discharge water temperature by controlling the mixing valve unit. The controller starts the feedback control when the controller determines that a change amount of the temperature of the hot water per unit time detected by the hot-water thermistor is not more than a fixed value and the temperature of the hot water detected by the hot-water thermistor is not lower than the predetermined temperature.

Abstract: To provide a water faucet device capable of easy grasp of setting states, without enlarging the size of the display portion. The present invention is a water faucet device (1) furnished with a flow setting function or temperature setting function; whereby the water faucet device has an operating portion (6) for controlling the water faucet device; a spout portion (2) forming a water discharge port; a light injecting portion (42), disposed at the base of the spout portion or the operating portion so as to be adjacent to the attaching surface at which the spout portion or the control portion are attached, for shining light onto the attaching surface; and display means (26) for displaying flow setting values or temperature setting values by varying the illumination range (46) formed on the attaching surface by the light illuminated from the light injecting portion.

Abstract: To provide a water spouting device capable of switching between spouting and stopping, flow volume adjustment, and spouted water temperature adjustment with a single operating portion. The present invention is a water faucet device (1) furnished with a flow volume adjustment function and a temperature adjustment function, including: an operating portion (6) capable of being pressed and rotated by a user; and flow volume/temperature adjustment means (10), whereby in a stopped water state, spouting is commenced when the operating portion of this flow volume/temperature adjustment means is pressed; in a spouting state, spouted water flow volume is changed when the operating portion is pressed continuously for a predetermined long-press determining time; and water flow is stopped when pressing of the operating portion ceases in less than the long-press determining time.

Abstract: The shape of a tip of an insulating material of an insulating isolation region is provided as being a concave one recessed below the back surface of an n-semiconductor substrate. This reduces the electric field strength at the corner at which the bottom of the n-semiconductor substrate is in contact with the insulating isolation region to allow an excellent breakdown voltage to be obtained. Moreover, by forming a high impurity concentration region such as a field-stop layer on the back surface of the n-semiconductor substrate, a depletion layer extending from the top surface is prevented from reaching the back surface. This eliminates an influence of a surface state introduced in the interface between the insulator film formed on the back surface and the n-semiconductor substrate, by which an excellent breakdown voltage can be obtained.

Abstract: A water-and-hot-water mixing device includes a mixing valve unit which mixes hot water and water and discharges mixed water therefrom, an operation part which sets a predetermined temperature, a mixed water thermistor which detects a temperature of mixed water, a hot-water thermistor which detects a temperature of hot water supplied to the mixing valve unit, and a controller which performs a feedback control of a discharge water temperature by controlling the mixing valve unit. The controller starts the feedback control when the controller determines that a change amount of the temperature of the hot water per unit time detected by the hot-water thermistor is not more than a fixed value and the temperature of the hot water detected by the hot-water thermistor is not lower than the predetermined temperature.

Abstract: To prevent the destruction of a semiconductor element due to negative resistance, and to reduce the dynamic resistance of a static electricity prevention diode, the ratio of the maximum electric field intensity during an avalanche and the average electric field in a strong electric field region, as well as the impurity density gradient in the vicinity of the strong electric field region are optimized. During avalanche breakdown, a depletion layer is formed across the entire high resistivity region, and its average electric field is kept to ½ or more of the maximum electric field intensity. The density gradients (the depths and impurity densities) of a p+ region and of an n+ region that form a p-n junction of the diode are controlled so that the density gradient in the neighborhood of the high resistivity region does not have negative resistance with respect to increase of the avalanche current.

Abstract: A lateral MOSFET and a method of forming thereof includes a p-type semiconductor substrate, a first n-type well in the surface portion of the semiconductor substrate, an n+-type drain region in the first n-type well, a p-type well in the first n-type well, an n+-type source region in the p-type well, a gate oxide film on the portion of the p-type well between the n+-type source region and the first n-type well, a gate electrode on the gate oxide film, and a second n-type well containing the p-type well therein to increase the n-type impurity concentration in the vicinity of the junction between the p-type well and the first n-type well beneath the gate and to increase the impurity amount and the thickness of the n-type semiconductor region beneath the p-type well. The first and second n-type wells can be overlapping or formed continuous or contiguous with each other. The lateral MOSFET exhibits a high punch-through breakdown voltage suitable for a high-side switch.

Abstract: The shape of a tip of an insulating material of an insulating isolation region is provided as being a concave one recessed below the back surface of an n-semiconductor substrate. This reduces the electric field strength at the corner at which the bottom of the n-semiconductor substrate is in contact with the insulating isolation region to allow an excellent breakdown voltage to be obtained. Moreover, by forming a high impurity concentration region such as a field-stop layer on the back surface of the n-semiconductor substrate, a depletion layer extending from the top surface is prevented from reaching the back surface This eliminates an influence of a surface state introduced in the interface between the insulator film formed on the back surface and the n-semiconductor substrate, by which an excellent breakdown voltage can be obtained.

Abstract: To prevent the destruction of a semiconductor element due to negative resistance, and to reduce the dynamic resistance of a static electricity prevention diode, the ratio of the maximum electric field intensity during an avalanche and the average electric field in a strong electric field region, as well as the impurity density gradient in the vicinity of the strong electric field region are optimized. During avalanche breakdown, a depletion layer is formed across the entire high resistivity region, and its average electric field is kept to ½ or more of the maximum electric field intensity. The density gradients (the depths and impurity densities) of a p+ region and of an n+ region that form a p-n junction of the diode are controlled so that the density gradient in the neighborhood of the high resistivity region does not have negative resistance with respect to increase of the avalanche current.

Abstract: An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off characteristics). In a part of a region on an emitter side surface interposed between trench gates, a sub well region is provided, which is connected to an emitter electrode through diodes. When the IGBT is in a turned-on state, the diodes are brought into a non-conduction state to isolate the sub well region from the emitter electrode, by which carriers are accumulated. When the IGBT is in a turned-off state, the diodes are brought into a conduction state to electrically connect the sub well region to the emitter electrode, by which carriers are discharged at a high speed. In an early stage of turning-on of the IGBT, capacitance of a portion of the gate facing the sub well region is converted to gate-emitter capacitance to thereby reduce gate-collector capacitance, by which electromagnetic noise at switching is reduced.

Abstract: A lateral MOSFET and a method of forming thereof includes a p-type semiconductor substrate, a first n-type well in the surface portion of the semiconductor substrate, an n+-type drain region in the first n-type well, a p-type well in the first n-type well, an n+-type source region in the p-type well, a gate oxide film on the portion of the p-type well between the n+-type source region and the first n-type well, a gate electrode on the gate oxide film, and a second n-type well containing the p-type well therein to increase the n-type impurity concentration in the vicinity of the junction between the p-type well and the first n-type well beneath the gate and to increase the impurity amount and the thickness of the n-type semiconductor region beneath the p-type well. The first and second n-type wells can be overlapping or formed continuous or contiguous with each other. The lateral MOSFET exhibits a high punch-through breakdown voltage suitable for a high-side switch.

Abstract: An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off characteristics). In a part of a region on an emitter side surface interposed between trench gates, a sub well region is provided, which is connected to an emitter electrode through diodes. When the IGBT is in a turned-on state, the diodes are brought into a non-conduction state to isolate the sub well region from the emitter electrode, by which carriers are accumulated. When the IGBT is in a turned-off state, the diodes are brought into a conduction state to electrically connect the sub well region to the emitter electrode, by which carriers are discharged at a high speed. In an early stage of turning-on of the IGBT, capacitance of a portion of the gate facing the sub well region is converted to gate-emitter capacitance to thereby reduce gate-collector capacitance, by which electromagnetic noise at switching is reduced.

Abstract: A Schottky electrode is formed of an alloy, which is composed of two or more kinds of metal materials in combinations that provide different Schottky barrier heights with respect to a semiconductor and that form no intermetallic compound.

Abstract: Reciprocal diffusion is prevented in a SiC electronic device by interposing an intermediate layer composed of W or a W-Si alloy rather than forming the Ni electrode directly on a SiC base, providing a stable electrode for which the contact resistance does not increase even when high temperatures are maintained. Bonding is facilitated when Au layer is formed on top of the Ni layer.