Abstract: Provided are: a polymer comprising a repeating unit represented by formula (I): wherein K represents an alkylene group; M represents a monovalent cation group; a dispersant including the polmer; and a silver halide photographic photosensitive material containing water-insoluble photographic solid grains dispersed in use of the dispersant. The dispersant of the invention prevents the surface tension from lowering where the solid fine grains are dispersed, thereby improving dispersing property and dispersion stability. The silver halide photographic photosensitive material according to the invention has good color reproductivity and improves storability before use and latent image storability at the same time.

Abstract: A tilt angle sensor is disclosed that is capable of detecting whether a tilt angle of a reference plane exceeds a predetermined value by means of only one threshold value. Although only one threshold value is used, the tilt angle can be measured with respect to either a clockwise or a counterclockwise direction from the untilted state. A pair of differential electrodes electrically independent of each other are formed in a shape symmetric with respect to upper and lower sections of a printed circuit board. A common electrode plate is mounted opposed to the pair of differential electrodes with a predetermined gap therebetween. The pair of differential electrodes and the common electrode is stored in a closed space formed by the printed circuit board and an oil case. A dielectric liquid is filled into the closed space in such a way that the level of the liquid varies according to the tilt of the reference plane.

Abstract: The object of this invention is to provide an image forming apparatus capable of preventing decrease in image density at a rear end part of an image. A change in waveform in sensor outputs which is produced when a toner patch image is read by an optical sensor used for the process control is detected. The difference (Vg-Vd) between grid voltage Vg and development bias voltage Vd is changed only between a target value of 300 V corresponding to low-output side threshold value Va and a target value of 100 V corresponding to high-output side threshold value Vb according to the sensor output deflection &Dgr;V so that the difference (Vg-Vd) decreases as the image loss level increases. The difference between the grid voltage Vg and the development bias voltage Vd is set so as to prevent the image loss in the rear end part of an image.

Abstract: Disclosed is a method of producing a water-soluble chain-extended gelatin subjecting a source a source gelatin having a first isoelectric point, in aqueous solution, to a partial crosslinking reaction to form a reaction mixture comprising a partially crosslinked gelatin having a second isoelectric point, filtering the reaction mixture, adjusting a pH value of the filtered reaction mixture to a value equivalent to the second isoelectric point ±1.5, and concentrating, drying and pulverizing the pH-adjusted reaction mixture.

Abstract: The present invention relates to a compound represented by Formula [I] wherein represents an aromatic carbo- or heterocyclic ring which may have a substituent; Cy represents a mono-, bi- or tricyclic aliphatic carbocyclic group having 3 to 20 carbon atoms, which may have a substituent; represents a mono- or bicyclic aliphatic nitrogen-containing heterocyclic group having 3 to 14 carbon atoms, which may have a substituent; R1 represents a hydrogen atom, a lower alkenyl group, a lower alkynyl group, a cyclo(lower alkyl) group, an amino group, a lower alkylamino group, a di(lower alkyl)-amino group, a hydroxyl group, a lower alkoxy group, a carboxyl group, a lower alkoxycarbonyl group, a carbamoyl group, a lower alkylcarbamoyl group or a di(lower alkyl)carbamoyl group, or a lower alkyl group which may have a substituent; and R2 represents a hydrogen atom or a lower alkyl group, a salt or ester thereof, a production process for the same, and an analge

Abstract: 4-(N,N-Dialkylamino)aniline compounds of the following general formula (I): wherein R1 represents an alkyl group, an aryl group or a heterocyclic group, R2 to R5 each represent a hydrogen atom or a substituent, and R2 and R3, R1 and R2, or R4 and R5 may form a ring together; a processing composition for color photography, which contains at least one of these compounds; and a color image-forming method wherein at least one of these aniline compounds is used.

Abstract: 4-(N,N-Dialkylamino)aniline compounds of the following general formula (I): ##STR1## wherein R.sup.1 represents an alkyl group, an aryl group or a heterocyclic group, R.sup.2 to R.sup.5 each represent a hydrogen atom or a substituent, and R.sup.2 and R.sup.3, R.sup.1 and R.sup.2, or R.sup.4 and R.sup.5 may form a ring together; a processing composition for color photography, which contains at least one of these compounds; and a color image-forming method wherein at least one of these aniline compounds is used.

Abstract: A developing device having a reduced size in the horizontal direction and in which a developing agent is transported with stirring along a circulating route inside a developing tank to effectively mix newly added toner therewith and stir the mixture. A developing tank for storing developing agent therein is horizontally divided with a partition member thereby providing an upper chamber and a lower chamber. A developer roller and a stirring roller are disposed in the lower chamber. Two screw rollers are disposed in the upper chamber. An inlet opening is formed between an end of the partition member and a regulating member for restricting a layer if the developing agent adsorbed to the developing roller. A developing agent removed by the restricting member is fed through an inlet opening to the screw rollers in the upper chamber. The developing agent is mixed with fresh toner supplied through a supply inlet and transported with being stirred by the screw roller in its axial direction.

Abstract: In a semiconductor device, a first conductive film made of, for example, polysilicon is formed on the element region of the semiconductor substrate. An insulation film is formed on the semiconductor substrate, for covering at least the first conductive film. A second conductive film covers at least the end portion of the insulation film. The first conductive film is used as a gate electrode of the MOS transistor, and the second conductive film is used as a protection film for covering and protecting the end portion of the insulation film and a lead-out electrode of the bipolar transistor. The end portion of the insulation film is covered and protected by the second conductive film obtained by patterning the conductive layer made of, for example, polysilicon. Further, the conductive layer is patterned so that stepped portions formed on the insulation film and the end portion of the insulation film are covered, and using this pattern, anisotropic etching is carried out.

Abstract: Disclosed are 4-(N,N-dialkylamino)aniline compounds having a 4-N substituent which is a polyethyleneoxy group and which forms a condensed ring with benzene ring, such as aniline compounds having the following structure, a processing composition containing such a compound and a method for forming a color image with the processing solution. The aniline compound is useful as a color developing agent capable of having a low fog density and sufficient yellow and cyan image densities and suitable for the rapid process.

Abstract: The first trench is formed in the region of the semiconductor substrate, in which an element isolation region is to be formed, and the first buried member, which is insulative, is buried in the first trench. Then, the second trench, having a width smaller than that of the first trench, is made in the first buried member, and the portion of the semiconductor substrate which is located at the bottom portion of the first trench, and the insulating second buried member is buried in the second trench, thereby forming the element isolation region.

Abstract: A wave absorber is provided which has a wave absorption characteristic of 20 dB in a frequency band of 1 GHz to 20 GHz, is nonflammable, compact and lightweight, and has excellent durability. A porous ferrite is produced as the base material for which is an Ni--Zn type ferrite which has an excellent wave absorption characteristic in the high frequency range, and this serves as a wave absorber formed in the shape of a pyramid or triangular prism.

Abstract: A heat treatment apparatus for semiconductor wafers includes a reaction chamber, a heater, a heat-insulating member, a first cooling gas path, a second cooling gas path, a blower and a controller. The reaction chamber houses semiconductor wafers. The heater is provided outside the reaction chamber to heat it. The heat-insulating member is provided outside the heater to keep the temperature of the reaction chamber. The first cooling gas path is interposed between the reaction chamber and heater, while the second cooling gas path is disposed between the heater and heat-insulating member. The blower allows gas to flow through the first and second gas paths to cool the reaction chamber. The controller controls the heater to increase the temperature of the reaction chamber and does the blower to decrease the temperature thereof.

Abstract: Test patterns are applied to an IC under test under a test pattern address by which the first fail is caused and under other test pattern addresses. A defect candidate area is moved to the position where a charged particle beam can scan the area and defect candidate wiring portions are specified. A potential data of the specified wiring is acquired for each of the test patterns and stored in a memory. This process is process performed by sequentially stepping back the stop test pattern addresses. Then, a potential data of the specified wiring in thee specified area is similarly acquired for non-defect IC. The respective potential data of the IC under test and the non-defect IC are compared to locate the mismatch test pattern address and wiring.

Abstract: A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the date lines, is constructed of a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.

Abstract: Disclosed are 4-(N,N-dialkylamino)aniline compounds having a 4-N substituent which is a polyethyleneoxy group and which forms a condensed ring with benzene ring, such as aniline compounds having the following structure, a processing composition containing such a compound and a method for forming a color image with the processing solution. The aniline compound is useful as a color developing agent capable of having a low fog density and sufficient yellow and cyan image densities and suitable for the rapid process.

Abstract: Test patterns are applied to an IC under test under a test pattern address by which the first fail is caused and under other test pattern addresses. A defect candidate area is moved to the position where a charged particle beam can scan the area and defect candidate wiring portions are specified. A potential data of the specified wiring is acquired for each of the test patterns and stored in a memory. This process is performed by sequentially stepping back the stop test pattern addresses. Then, a potential data of the specified wiring in the specified area is similarly acquired for non-defect IC. The respective potential data of the IC under test and the non-defect IC are compared to locate the mismatch test pattern address and wiring.

Abstract: A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the date lines, is constructed of a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.

Abstract: A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the date lines, is constructed of a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.

Abstract: An IC fault analysis system which is capable of accurately correlating mask layout data and/or net listing data associated with CAD (computer aided design) data developed in the IC design and an image obtained by a non-contact type tester such as an electron beam tester.