Abstract: Provided are a stack and a single-crystal diamond substrate that can be manufactured with high quality and at low cost, and a method of manufacturing the same. A stack of a ruthenium film 3 and a diamond film 4, and a single-crystal diamond substrate 1 include the ruthenium film 3 and the diamond film 4 heteroepitaxially grown on the ruthenium film 3. A surface of the ruthenium film 3 is the (0001) plane, and a surface of the diamond film 4 is a (111) plane. Ruthenium is used as a base film for heteroepitaxially growing the diamond film 4.

Abstract: Provided are a diamond field effect transistor using a silicon oxide film as a gate insulating film including a silicon-terminated layer containing C—Si bonds in order to reduce an interface state density, and a method for producing the same. A FET 100A includes a silicon oxide film 3A formed on a surface of a non-doped diamond layer 2A, a non-doped diamond layer 4A formed on a surface of the non-doped diamond layer 2A using the silicon oxide film 3A as a mask, a silicon-terminated layer 5A formed at an interface between the non-doped diamond layer 2A and the silicon oxide film 3A and at an interface between the non-doped diamond layer 4A and the silicon oxide film 3A, and a gate electrode 12A formed on the silicon oxide film 3A. The FET 100A operates using the silicon oxide film 3A and an insulating film 10A formed on the silicon oxide film 3A as a gate insulating film 11A and using the non-doped diamond layer 4A as each of a source region and a drain region.

Abstract: The invention is to provide an underwater communication device and an underwater communication method that can be applied to mobile communication in water. An underwater communication device 10 includes: a transmitter 12 configured to transmit an electric signal; and a receiver 14 arranged away from the transmitter 12 via water and configured to receive the electric signal, in which the receiver 14 includes an field effect transistor 23 having a channel region 39 provided at a position in contact with the water, and a drive circuit 26 configured to generate a potential difference between a source region 31 and a drain region 33 of the field effect transistor 23.

Abstract: An electronic component includes a field effect transistor that functions as a working electrode of an ion sensor and a driving circuit that causes a potential difference between a source electrode and a drain electrode of the field effect transistor. A reference electrode potential of the field effect transistor is fixed.

Abstract: An electronic component includes a field effect transistor that functions as a working electrode of an ion sensor and a driving circuit that causes a potential difference between a source electrode and a drain electrode of the field effect transistor. A reference electrode potential of the field effect transistor is fixed.

Abstract: A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond thin film and a second substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the presence of the fluorocarbon deposition on the surface of diamond thin film based on required surface properties of the diamond thin film.

Abstract: A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond thin film and a second substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the presence of the fluorocarbon deposition on the surface of diamond thin film based on required surface properties of the diamond thin film.

Abstract: A substrate for growing carbon nanotubes capable of elongating single-walled carbon nanotubes of an average diameter of less than 2 nm is provided. The substrate for growing carbon nanotubes 1 is equipped with a reaction prevention layer 3 formed on a base material 2, a catalyst material layer 4 formed on the reaction prevention layer 3, a dispersion layer 5 formed on the catalyst material layer 4, and a dispersion promotion layer 6 formed on the dispersion layer 5.

Abstract: A carbon nanotube synthesizing apparatus in which the state of generated plasma can be stabilized is provided. A carbon nanotube synthesizing apparatus 1 comprises a chamber 2, an antenna 3 including a tip 3a, a microwave conductor 4, a gas introducing unit 5, a gas discharging unit 6, a substrate holding unit 7, and a heating unit 8. The shape of the inner wall of the chamber 2 is symmetrical with respect to the tip 3a of the antenna 3.

Abstract: Disclosed is a method capable of accelerating the growth of oriented carbon nanotubes when manufacturing the oriented carbon nanotubes by a plasma CVD. Under the circulation of a gas which is the raw material of the carbon nanotubes, plasma is generated by an antenna (6) provided in a depressurized treatment chamber (2), and substrates (9, 15) provided with a reaction prevention layer and a catalyst material layer which are formed on a base material are held at a distance, to which a radical can reach and an attack of an ion generated as a by-product of the radical can be avoided, from a plasma generation area (7). The tip (6a) of the antenna (6) can be controlled so as to match with the position of the anti-node of a stationary wave (27) of microwaves.

Abstract: The potential of aptamers as ligand binding molecule have opened new avenues in the development of biosensors for proteins, such as cancer oncoproteins. Disclosed herein is a label-free detection strategy using signaling aptamer/protein binding complex for proteins, such as platelet-derived growth factor (PDGF-BB) oncoprotein. The detection mechanism is based on the release of a fluorophore (e.g., TOTO intercalating dye) from the target binding aptamer's stem structure when it captures the protein, e.g., PDGF. Amino-terminated three-dimensional carbon microarrays fabricated by pyrolyzing patterned photoresist are used as a detection platform. The sensor showed near linear relationship between the relative fluorescence difference and protein concentration even in the sub-nanomolar range with an excellent detection limit of 5 pmol. This detection strategy is promising in a wide range of applications in the detection of cancer biomarkers and other proteins.

Abstract: A carbon nanotube synthesizing apparatus in which the state of generated plasma can be stabilized is provided. A carbon nanotube synthesizing apparatus 1 comprises a chamber 2, an antenna 3 including a tip 3a, a microwave conductor 4, a gas introducing unit 5, a gas discharging unit 6, a substrate holding unit 7, and a heating unit 8. The shape of the inner wall of the chamber 2 is symmetrical with respect to the tip 3a of the antenna 3.

Abstract: A substrate for growing carbon nanotubes capable of elongating single-walled carbon nanotubes of an average diameter of less than 2 nm is provided. The substrate for growing carbon nanotubes 1 is equipped with a reaction prevention layer 3 formed on a base material 2, a catalyst material layer 4 formed on the reaction prevention layer 3, a dispersion layer 5 formed on the catalyst material layer 4, and a dispersion promotion layer 6 formed on the dispersion layer 5.

Abstract: Disclosed is a method capable of accelerating the growth of oriented carbon nanotubes when manufacturing the oriented carbon nanotubes by a plasma CVD. Under the circulation of a gas which is the raw material of the carbon nanotubes, plasma is generated by an antenna (6) provided in a depressurized treatment chamber (2), and substrates (9, 15) provided with a reaction prevention layer and a catalyst material layer which are formed on a base material are held at a distance, to which a radical can reach and an attack of an ion generated as a by-product of the radical can be avoided, from a plasma generation area (7). The tip (6a) of the antenna (6) can be controlled so as to match with the position of the anti-node of a stationary wave (27) of microwaves.

Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

Abstract: A DNA sensor including a p-channel field-effect transistor having as a gate an electrolyte solution and having as a channel a diamond surface which contains a mixture of at least a hydrogen-terminated surface and a surface terminated by an amino group or a molecule with an amino group as an amino termination; a probe DNA constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the amino termination of the diamond surface; and a target DNA constituted of an unknown single-stranded DNA which is dropped on said diamond surface, wherein the hybridization of the target and probe is ascertained by detecting a shift of the threshold voltage of said p-channel field effect transistor toward positive direction which is due to increase in hole density of the p-channel resulting from doubling the negative electric charge of the phosphate groups upon hybridization.

Abstract: A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals is treated under the action of glutaraldehyde OHC(CH2)3CHO (30), so that the glutaraldehyde (30) is immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. Subsequently, urease (29) is further applied thereto, so that the amino group (31) of the urease (29) is bonded to the glutaraldehyde (30). That is, the urease (29) can be immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. When the urea concentration is increased from 10?6 M to 10?2 M, the threshold voltage shifts by about 0.1 V in the positive direction, and the sensitivity to urea concentration of 30 mV/decade is exhibited.

Abstract: A DNA sensor is provided which is capable of identifying unknown DNA with enhanced detection sensitivity of the hybridization. A p-channel field-effect transistor having an electrolyte solution gate 8 and having as a p-channel 5 a diamond surface 2 which contains a mixture of at least a hydrogen-terminated surface and a surface terminated with an amino group or a molecule with an amino group is configured along with a probe DNA 11 constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the diamond surface 2 and with a target DNA constituted of an unknown single-stranded DNA which is dropped on the diamond surface 2.

Abstract: A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals is treated under the action of glutaraldehyde OHC(CH2)3CHO (30), so that the glutaraldehyde (30) is immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. Subsequently, urease (29) is further applied thereto, so that the amino group (31) of the urease (29) is bonded to the glutaraldehyde (30). That is, the urease (29) can be immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. When the urea concentration is increased from 10?6 M to 10?2 M, the threshold voltage shifts by about 0.1 V in the positive direction, and the sensitivity to urea concentration of 30 mV/decade is exhibited.

Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.