Abstract: A wire bonding apparatus for connecting a metal fine wire at a normal position on a bonding pad of an IC chip so that there will be no variations in the positions of a die pad and the IC chip at the time of bonding. A platen is disposed on a heat block in accordance with the shape of an IC lead frame for enlarging a heat transfer surface for transferring heat to the lead frame. A heater and a preheater for preheating an IC chip that is to be heated next by the heater are disposed on a surface of the platen.

Abstract: A principal object is to provide a wire bonding apparatus which is improved to be capable of connecting a metal fine wire at a normal position on a bonding pad of an IC chip so that there will be no variations in the positions of a die pad and the IC chip at the time of bonding. A platen is disposed on a heat block in accordance with the shape of an IC lead frame for enlarging a heat transfer surface. A heating part for heating an IC chip and a preheating part for preheating an IC chip that is to be heated next are disposed on a surface of the platen.

Abstract: A semiconductor device includes a lead frame including a die pad having corners, inner leads having respective inner end portions, outer leads, a hanging lead reinforcement, first hanging leads, and second hanging leads; a semiconductor chip bonded to the lead frame; and metal wires bonding the chip to the lead frame. A length of one side of the semiconductor chip is 2.5 mm smaller than a side of a molded resin external dimension, one side of the largest dimension of the hanging lead frame reinforcement not being longer than one side of the semiconductor chip. The die pad is sunk where second hanging leads are connected to the hanging lead reinforcement and has a step where connected to the second hanging leads. The camber of the external shape of the semiconductor device is reduced and a semiconductor device with high quality and reliability is obtained.

Abstract: A wire bonding apparatus includes a capillary tip through which a fine metal wire passes, a first clamp disposed above the capillary tip for clamping the fine metal wire, a second clamp disposed above the first clamp for clamping the fine metal wire, a first moving mechanism for moving the capillary tip up and down, and a second moving mechanism for moving the first clamp up and down with respect to the capillary tip in order that an excess length of the fine metal wire which protrudes from the capillary tip may be drawn back into the capillary tip. In a method of using the apparatus, the first clamp clamps the fine metal wire and retracts it through the capillary tip to avoid an excessive wire length between a ball bond and a wire bond in the completed product. The second clamp clamps the wire during the wire bonding process to ensure that excess retracted wire does not again pass through the capillary tip.

Abstract: A polysilicon film is provided in a first region provided with a bonding pad on a silicon substrate and a second region apart from the first region and surrounding the first region, an aluminum film serving as a bonding pad is provided on the polysilicon film in the first region, a PSG (Phospho-Silicate Glass) film is provided on the polysilicon film in the second region, and an insulating protective film including no phosphorus is provided between the aluminum film and the PSG film.