Abstract: To improve on power and bandwidth limitations associated with conventional feedforward equalizer (FFE) implementations, the present disclosure provides intersymbol interference (ISI) compensation circuits that do not use delay cells common to FFE structures. In one example, the compensation circuit of the present disclosure comprises a two stage amplifier. Each stage of the amplifier is implemented using a differential pair with degeneration. One of the amplifier stages has a transfer function with a zero in the left half of the s-domain, also called the s-plane, and the other amplifier has a transfer function with a zero in the right half of the s-domain. The amplifier stage with the zero in the left half of the s-domain can be used to provide post-cursor ISI compensation, and the amplifier stage with the zero in the right half of the s-domain can be used to provide pre-cursor ISI compensation.

Abstract: A vehicle display device includes a projector which emits display light of an image indicating vehicle information, a controller that controls luminance of the display light, and a screen that displays the image when the display light is projected to the screen. The screen has a convex portion that protrudes to a near side in a direction in which the image is visually recognized, and a concave portion that is recessed to a far side. In addition, the controller controls the luminance of the display light so that the display light projected to the convex portion (first parts) has higher luminance than that of the display light projected to the concave portion (second parts).

Abstract: An end fixing structure of a composite wire rod includes a composite wire rod, a wedge body that is formed into a cylindrical shape with an enlarging diameter from a front end portion, wherein an inner wall surface is formed for engaging with the outer surface of the composite wire rod which is copied onto the inner wall surface, and a sleeve provided on an outer peripheral side of the wedge body and having a conical and hollow inner structure, and the wedge body consists of a plurality of divided wedge bodies, facing each other on their divided surfaces with a space therebetween, and the inner wall surface in the divided wedge body is made of microscopic irregularities, thereby shortening a processing time and maintaining a sufficient gripping power over long term.

Abstract: A method for determining a nucleic acid sequence of a target gene expressed in a subject cell, the method including: comprehensively determining mRNA nucleic acid sequences in the subject cell, and identifying a nucleic acid sequence having a nucleic acid sequence of a portion of the target gene, from among the determined mRNA nucleic acid sequences, in which the identified nucleic acid sequence is a nucleic acid sequence of the target gene.

Abstract: To improve on power and bandwidth limitations associated with conventional feedforward equalizer (FFE) implementations, the present disclosure provides intersymbol interference (ISI) compensation circuits that do not use delay cells common to FFE structures. In one example, the compensation circuit of the present disclosure comprises a two stage amplifier. Each stage of the amplifier is implemented using a differential pair with degeneration. One of the amplifier stages has a transfer function with a zero in the left half of the s-domain, also called the s-plane, and the other amplifier has a transfer function with a zero in the right half of the s-domain. The amplifier stage with the zero in the left half of the s-domain can be used to provide post-cursor ISI compensation, and the amplifier stage with the zero in the right half of the s-domain can be used to provide pre-cursor ISI compensation.

Abstract: To enhance electromigration resistance of an electrode. A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract: To improve on power and bandwidth limitations associated with conventional feedforward equalizer (FFE) implementations, the present disclosure provides intersymbol interference (ISI) compensation circuits that do not use delay cells common to FFE structures. In one example, the compensation circuit of the present disclosure comprises a two stage amplifier. Each stage of the amplifier is implemented using a differential pair with degeneration. One of the amplifier stages has a transfer function with a zero in the left half of the s-domain, also called the s-plane, and the other amplifier has a transfer function with a zero in the right half of the s-domain. The amplifier stage with the zero in the left half of the s-domain can be used to provide post-cursor ISI compensation, and the amplifier stage with the zero in the right half of the s-domain can be used to provide pre-cursor ISI compensation.

Abstract: Disclosed herein is a bias generator circuit for generating a desired bias voltage or bias current using a simple configuration. The bias generator circuit includes a voltage generator circuit, a comparator, and a clock gating circuit. The voltage generator circuit increases or decreases its output voltage in accordance with the number of clock cycles of a given clock signal. The comparator compares the output voltage of the voltage generator circuit to a reference voltage. The clock gating circuit receives, as a control signal, output of the comparator and determines, in accordance with the control signal, whether or not to pass the clock signal to the voltage generator circuit. Thus, the output voltage of the voltage generator circuit, i.e., a bias voltage, is set to be close to the reference voltage.

Abstract: A deformable thin object spreading device and method are disclosed. The device includes a control part configured to: control a clamping unit and a moving mechanism to cause the clamping unit to clamp a first point of a deformable thin object; cause an endpoint detecting part to detect a first endpoint; control the clamping unit and the moving mechanism to cause the clamping unit to clamp the first endpoint; cause the endpoint detecting part to detect a second endpoint; control the clamping unit and the moving mechanism to cause the clamping unit to clamp both of the first endpoint and the second endpoint; cause the endpoint detecting part to detect a third endpoint; and control the clamping unit and the moving mechanism to cause the clamping unit to clamp both of the first endpoint or the second endpoint and the third endpoint of the deformable thin object.

Abstract: This liquid detergent contains an ?-sulfofatty acid ester salt (component (a)), an alkylbenzene sulfonate (component (b)), a polyoxyethylene alkyl ether sulfate (component (c)), and an alkanolamine (component (d)). The amount of the component (a) is 5% by mass or greater; the total amount of the component (b) and the component (c) is 5% by mass or greater; the total amount of the component (a), the component (b), and the component (c) is 10% by mass to 50% by mass, the mass ratio represented by (d)/(a) is 1/5 or greater, and the mass ratio represented by (a)/((b)+(c)) is 1 or less.

Abstract: A low noise amplifier includes: first and seventh transistors configured to respectively receive first and second input signals; second, third, and fifth transistors connected to the first transistor; eighth, ninth, and eleventh transistors connected to the seventh transistor; a third resistive element; fourth and tenth transistors respectively connected to the third and ninth transistors; sixth and twelfth transistors respectively connected to second and first output terminals; and first and second resistive elements.

Abstract: It has conventionally been difficult to achieve a sheet adhesive which adheres in a low temperature (from 20 to 90° C.), and has both of softness and high adhering strength. The present invention realizes a sheet adhesive capable of adhering in a low temperature (from 20 to 90° C.) which exhibits a high adhesiveness in spite of being a soft sheet of thin film, by forming a simulated multiple layer by using an elastomer as a substrate layer, and by forming a reactive layer by means of spraying or application. A sheet adhesive including a substrate layer and a reactive layer, wherein the substrate layer includes a component (A) and a component (B) below, and the reactive layer is formed with a liquid agent including a component (C) below in an amount of from 0.014 by mass to 45% by mass, component (A): a urethane elastomer, component (B): an epoxy resin, component (C): an amine compound and/or phenol compound.

Abstract: A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film.