Abstract: A time-division control circuit individually controls an effective voltage supplied to each lighting load by adjusting the periods during which switching circuits connected to N sets of lighting loads are kept on. A zero-cross signal having a value that changes at the zero-cross point of the AC voltage is generated. An oscillation signal is generated with a frequency equal to, or an integer multiple of the AC frequency. The phase difference between the zero-cross signal and the oscillation signal is measured and a common reference point that defines the timing for turning the switching circuits ON or OFF is determined on the basis of the measured phase difference. An ON/OFF signal for each switching circuit is transmitted at a timing for each of the N sets of switching circuits on the basis of the reference point and the effective voltage to be supplied to the lighting load.

Abstract: A time-division control circuit individually controls an effective voltage supplied to each lighting load by adjusting the periods during which switching circuits connected to N sets of lighting loads are kept on. A zero-cross signal having a value that changes at the zero-cross point of the AC voltage is generated. An oscillation signal is generated with a frequency equal to, or an integer multiple of the AC frequency. The phase difference between the zero-cross signal and the oscillation signal is measured and a common reference point that defines the timing for turning the switching circuits ON or OFF is determined on the basis of the measured phase difference. An ON/OFF signal for each switching circuit is transmitted at a timing for each of the N sets of switching circuits on the basis of the reference point and the effective voltage to be supplied to the lighting load.

Abstract: The present invention is aimed at providing a dimmer capable of preventing malfunctions due to noise contamination or waveform distortion of the voltage of an AC power source.

Abstract: The present invention is aimed at providing a dimmer capable of preventing malfunctions due to noise contamination or waveform distortion of the voltage of an AC power source.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.