Abstract: A laser oscillation mechanism of a laser beam irradiation unit has a first mode to break growing debris, a second mode to suppress generation of molten debris, and a third mode to break the growing debris and suppress generation of the molten debris. The laser oscillation mechanism includes a selecting part that selects any of the first mode, the second mode, and the third mode. The laser oscillation mechanism sets a repetition frequency with a first group being one unit in the first mode, and sets a repetition frequency with a second group being one unit in the second mode, and sets a repetition frequency with a third group being one unit in the third mode.

Abstract: A laser processing apparatus includes a laser oscillating mechanism for emitting pulsed laser beams. The laser oscillating mechanism includes a group setting section for establishing the number of pulsed laser beams to be applied to a workpiece until a time after which melted debris produced by the pulsed laser beams applied to the workpiece is solidified, and assigns the pulsed laser beams to a group, under conditions that, within a period of time which is shorter than a period of time in which the melted debris is produced, and within a period of time after which a plasma generated by the pulsed laser beam becomes extinct, a next pulsed laser beam is applied to the workpiece to sustain the plasma uninterruptedly to break growing debris, and a time interval setting section for establishing a time interval between the group and another group adjacent thereto.

Abstract: A laser beam irradiating unit of a laser processing apparatus includes a laser oscillating mechanism. The laser oscillating mechanism includes a group setting unit configured to, on a condition that a pulsed laser beam is applied at shorter time intervals than a length of time that molten debris is generated, set the number of pulsed laser beams to be applied until a time that the molten debris is solidified and set the number of pulsed laser beams as one group. A time interval setting unit is configured to set a time until heat generated by application of the pulsed laser beams of the one group is cooled, which serves as a time interval between the one group and an adjacent group, and set time intervals of the pulsed laser beams constituting the one group. The laser oscillating mechanism sets a repetition frequency with the one group as one unit.

Abstract: A laser processing apparatus includes a chuck table that holds a workpiece, a laser beam irradiation unit that irradiates the workpiece with a laser beam, and a feed mechanism that moves the chuck table and the laser beam irradiation unit relative to each other to execute processing feed. The laser beam irradiation unit includes a laser oscillation mechanism that emits a pulsed laser beam and a beam condenser that condenses the pulsed laser beam emitted by the laser oscillation mechanism and irradiates the workpiece with the pulsed laser beam. The laser oscillation mechanism has a group setting part that sets multiple pulsed laser beams into one group and a time interval setting part that sets a time interval of the pulsed laser beams that configure the one group, and sets the repetition frequency in such a manner as to regard the one group as one unit.

Abstract: A time-division control circuit individually controls an effective voltage supplied to each lighting load by adjusting the periods during which switching circuits connected to N sets of lighting loads are kept on. A zero-cross signal having a value that changes at the zero-cross point of the AC voltage is generated. An oscillation signal is generated with a frequency equal to, or an integer multiple of the AC frequency. The phase difference between the zero-cross signal and the oscillation signal is measured and a common reference point that defines the timing for turning the switching circuits ON or OFF is determined on the basis of the measured phase difference. An ON/OFF signal for each switching circuit is transmitted at a timing for each of the N sets of switching circuits on the basis of the reference point and the effective voltage to be supplied to the lighting load.

Abstract: A time-division control circuit individually controls an effective voltage supplied to each lighting load by adjusting the periods during which switching circuits connected to N sets of lighting loads are kept on. A zero-cross signal having a value that changes at the zero-cross point of the AC voltage is generated. An oscillation signal is generated with a frequency equal to, or an integer multiple of the AC frequency. The phase difference between the zero-cross signal and the oscillation signal is measured and a common reference point that defines the timing for turning the switching circuits ON or OFF is determined on the basis of the measured phase difference. An ON/OFF signal for each switching circuit is transmitted at a timing for each of the N sets of switching circuits on the basis of the reference point and the effective voltage to be supplied to the lighting load.

Abstract: The present invention is aimed at providing a dimmer capable of preventing malfunctions due to noise contamination or waveform distortion of the voltage of an AC power source.

Abstract: The present invention is aimed at providing a dimmer capable of preventing malfunctions due to noise contamination or waveform distortion of the voltage of an AC power source.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: A punched adhesive tape for semiconductor which is made by punching an adhesive tape comprising a base film and an adhesive layer provided on one or each side of the base film to mark the regions in the adhesive tape where contaminants or defects are contained; a method of producing an adhesive tape-bearing lead frame by punching the punched adhesive tape for semiconductor, with the parts containing the punched holes skipped over, and applying the adhesive tape pieces punched out from the punched adhesive tape for semiconductor to a lead frame; a semiconductor device fabricated by using the adhesive-bearing lead frame.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.

Abstract: The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.