Patents by Inventor Hiroshi Kishishita

Hiroshi Kishishita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4594282
    Abstract: A thin-film electroluminescent (EL) element comprises a thin-film electroluminescent layer, first and second dielectric layers for supporting the element layer, the first dielectric layer being disposed on a smooth surface and the second dielectric layer being disposed on an uneven surface, the thickness of the first dielectric layer being thicker than that of the second dielectric layer such that the dielectric properties of the element are assured, and first and second electrodes provided on the dielectric layers, respectively.
    Type: Grant
    Filed: December 1, 1983
    Date of Patent: June 10, 1986
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masashi Kawaguchi, Kinichi Isaka, Yoshihiro Endo, Hiroshi Kishishita
  • Patent number: 4446399
    Abstract: A thin electroluminescent (EL) display panel comprises an EL thin film unit for generating an EL light, a pair of glass substrates for sealing the EL thin film unit, a protective liquid within the cavity defined by the glass substrate for protecting the EL thin film unit, a pair of electrodes for conducting electric energy to the EL thin film unit, and a terminal connected to at least one of the pair of electrodes, the terminal comprising a metal such as Al, Al-Ni, Ag-Mn, etc., and the terminal being coupled to a power source.
    Type: Grant
    Filed: June 5, 1981
    Date of Patent: May 1, 1984
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Endo, Masashi Kawaguchi, Etsuo Mizukami, Hiroshi Kishishita
  • Patent number: 4399015
    Abstract: A method for fabricating an indium tin oxide (ITO) film comprises depositing the ITO film on a heat-resisting substrate by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas, and heat-treating the ITO film at about 550-650 degrees Centigrade in an oxygen-free atmosphere. Preferably, the heat-resisting substrate comprises an aluminoborosilicate glass. Further, sputtering, preferably reactive sputtering, is employed.
    Type: Grant
    Filed: February 1, 1982
    Date of Patent: August 16, 1983
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Endo, Yoshito Yamashita, Hiroshi Kishishita, Hisashi Uede
  • Patent number: 4287449
    Abstract: At least one light-absorption layer is disposed between a thin electroluminescent film and a counter electrode for absorbing light applied through a transparent electrode. According to the light-absorption layer, less light is reflected by the counter electrode, thereby preventing a visual contrast provided by electroluminescence from lowering owing to the reflected light. A plurality of light-absorption layers may be formed in the same arrangement. Materials useful for the light-absorption layers are Al.sub.2 O.sub.3, Al.sub.2 O.sub.3-x, Mo, Zr, Ti, Y, Ta, Ni, Al or the like with a thickness of about 10-300 A.
    Type: Grant
    Filed: January 31, 1979
    Date of Patent: September 1, 1981
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Mikio Takeda, Hiroshi Kishishita, Hiroyuki Kawabata, Kinichi Isaka
  • Patent number: 4213074
    Abstract: A thin-film electroluminescent display panel is sealed by a pair of glass substrates for protecting itself from the environment. A protective liquid is introduced between a counter glass substrate and a substrate for supporting the electroluminescent display panel. The protective liquid comprises silicon oil or grease which assures the thin-film electroluminescent panel of preservation of the electroluminescent display panel. The counter glass substrate is bonded to the substrate through an adhesive of, for example, photocuring resin. A capillary tube is provided within the substrate for injecting the liquid under vacuum conditions. The counter glass substrate can be plate-shaped thereby eliminating a spacer.
    Type: Grant
    Filed: June 14, 1978
    Date of Patent: July 15, 1980
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masashi Kawaguchi, Hiroshi Kishishita, Etsuo Mizukami, Yoshiharu Kanatani
  • Patent number: 4188565
    Abstract: At least one silicon-oxynitride film is deposited on an electroluminescence layer for providing a uniform and stable dielectric layer for an electroluminescence display panel. The silicon-oxynitride film is deposited using a sputtering technique by mixing a small amount (1 mol%) of nitrous oxide (N.sub.2 O) gas into a sputtering gas such as nitrogen (N.sub.2) gas. Oxygen (O.sub.2) gas may be substituted for the N.sub.2 O gas mingled within the sputtering gas in the amount of five mol%. A target for sputtering is a pure silicon or sintered Si.sub.3 N.sub.4 plate. An R.F. discharge is provided so that the power flux density on the target becomes several to several ten W. The silicon-oxynitride film is derived by means of the reaction between ion sputtering and the sputtering gas.
    Type: Grant
    Filed: March 8, 1978
    Date of Patent: February 12, 1980
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Etsuo Mizukami, Hiroshi Kishishita, Masashi Kawaguchi, Yoshihiro Endo, Kinichi Isaka