Abstract: A method for fabricating an indium tin oxide (ITO) film comprises depositing the ITO film on a heat-resisting substrate by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas, and heat-treating the ITO film at about 550-650 degrees Centigrade in an oxygen-free atmosphere. Preferably, the heat-resisting substrate comprises an aluminoborosilicate glass. Further, sputtering, preferably reactive sputtering, is employed.

Abstract: At least one light-absorption layer is disposed between a thin electroluminescent film and a counter electrode for absorbing light applied through a transparent electrode. According to the light-absorption layer, less light is reflected by the counter electrode, thereby preventing a visual contrast provided by electroluminescence from lowering owing to the reflected light. A plurality of light-absorption layers may be formed in the same arrangement. Materials useful for the light-absorption layers are Al.sub.2 O.sub.3, Al.sub.2 O.sub.3-x, Mo, Zr, Ti, Y, Ta, Ni, Al or the like with a thickness of about 10-300 A.

Abstract: A thin-film electroluminescent display panel is sealed by a pair of glass substrates for protecting itself from the environment. A protective liquid is introduced between a counter glass substrate and a substrate for supporting the electroluminescent display panel. The protective liquid comprises silicon oil or grease which assures the thin-film electroluminescent panel of preservation of the electroluminescent display panel. The counter glass substrate is bonded to the substrate through an adhesive of, for example, photocuring resin. A capillary tube is provided within the substrate for injecting the liquid under vacuum conditions. The counter glass substrate can be plate-shaped thereby eliminating a spacer.

Abstract: At least one silicon-oxynitride film is deposited on an electroluminescence layer for providing a uniform and stable dielectric layer for an electroluminescence display panel. The silicon-oxynitride film is deposited using a sputtering technique by mixing a small amount (1 mol%) of nitrous oxide (N.sub.2 O) gas into a sputtering gas such as nitrogen (N.sub.2) gas. Oxygen (O.sub.2) gas may be substituted for the N.sub.2 O gas mingled within the sputtering gas in the amount of five mol%. A target for sputtering is a pure silicon or sintered Si.sub.3 N.sub.4 plate. An R.F. discharge is provided so that the power flux density on the target becomes several to several ten W. The silicon-oxynitride film is derived by means of the reaction between ion sputtering and the sputtering gas.