Patents by Inventor Hiroshi Kitaguchi

Hiroshi Kitaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070152163
    Abstract: A radiation imaging apparatus with high spatial resolution including semiconductor radiation detectors arranged on a wiring board capable of detecting ?-rays by separating their positions in the direction of incidence of ?-rays is provided. A semiconductor radiation detector is constructed by including five semiconductor devices made up of, for example, CdTe rectangular parallelepiped plates, a cathode electrode on one side of the semiconductor device, an anode electrode on the other side of the semiconductor device and an insulator for coating five semiconductor detection devices from the outside. The semiconductor radiation detector is mounted on a wiring board using an anode pin and a cathode pin.
    Type: Application
    Filed: March 14, 2007
    Publication date: July 5, 2007
    Inventors: Norihito Yanagita, Hiroshi Kitaguchi, Takafumi Ishitsu, Kensuke Amemiya, Yuuichirou Ueno, Katsutoshi Tsuchiya, Shinichi Kojima, Kazuma Yokoi
  • Publication number: 20070138398
    Abstract: A radiological imaging apparatus allowing semiconductor radiation detectors to be easily replaced with new ones and densely arranged. Terminals (31cjk) and (33cjk) are provided on a bottom surface of a detector aggregate (40mn) including a plurality of semiconductor radiation detectors (1); the terminals is connected to electrodes (3 and 4) of the detectors (1). A plurality of zero insertion force connectors (56) are provided on a connecting device (33jk) installed on a support substrate (32h). The terminals (31cjk and 33cjk) are detachably attached to the zero insertion force connectors (56) to mount the detector aggregates (40mn) that are the semiconductor radiation detectors (1), on the support substrate (32h). When the detector aggregates (40mn) are attached to the zero insertion force connectors (56), since no frictional force acts on the terminals, the size of the gap between the detector aggregates (40mn) is reduced.
    Type: Application
    Filed: February 1, 2007
    Publication date: June 21, 2007
    Inventors: Kazuma Yokoi, Hiroshi Kitaguchi, Takafumi Ishitsu, Naoyuki Yamada, Kensuke Amemiya, Yuuichirou Ueno, Katsutoshi Tsuchiya, Norihito Yanagita
  • Publication number: 20070117439
    Abstract: A radiological imaging apparatus allowing semiconductor radiation detectors to be easily replaced with new ones and densely arranged. Terminals (31cjk) and (33cjk) are provided on a bottom surface of a detector aggregate (40mn) including a plurality of semiconductor radiation detectors (1); the terminals is connected to electrodes (3 and 4) of the detectors (1). A plurality of zero insertion force connectors (56) are provided on a connecting device (33jk) installed on a support substrate (32h). The terminals (31cjk and 33cjk) are detachably attached to the zero insertion force connectors (56) to mount the detector aggregates (40mn) that are the semiconductor radiation detectors (1), on the support substrate (32h). When the detector aggregates (40mn) are attached to the zero insertion force connectors (56), since no frictional force acts on the terminals, the size of the gap between the detector aggregates (40mn) is reduced.
    Type: Application
    Filed: January 24, 2007
    Publication date: May 24, 2007
    Inventors: Kazuma Yokoi, Hiroshi Kitaguchi, Takafumi Ishitsu, Naoyuki Yamada, Kensuke Amemiya, Yuuichirou Ueno, Katsutoshi Tsuchiya, Norihito Yanagita
  • Patent number: 7218701
    Abstract: The image pickup apparatus of the radiological imaging apparatus of the present invention includes many detector units, a ring-shaped detector support member and an X-ray source circumferential transport apparatus. Each of the detector units is attached to the detector support section in a detachable manner. A plurality of radiation detectors provided for the detector units are arranged in three layers in the radius direction of the detector support member and in three columns in the axial direction of the detector support member. Since the radiation detectors are arranged in three layers in the radius direction, it is possible to recognize the detection position of radiation in the radius direction in detail. Furthermore, since the detector units are attached in a detachable manner, it is easy to replace damaged radiation detectors.
    Type: Grant
    Filed: March 9, 2006
    Date of Patent: May 15, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Yuuichirou Ueno, Hiroshi Kitaguchi, Kensuke Amemiya, Kikuo Umegaki, Norihito Yanagita, Shinichi Kojima, Kazuma Yokoi
  • Patent number: 7217931
    Abstract: A radiological imaging apparatus capable of improving an arrangement density of semiconductor radiation detectors and detector units thereof, each detector unit consisting of a plurality of combined substrates having a detector substrate which includes semiconductor radiation detectors and a signal processing substrate which includes integrated circuits, housed in a housing. The detector substrate protrudes outward from an opening of the housing. A plurality of detector units are attached to a ring-shaped unit support section in a circumferential direction thereof. More specifically, the detector substrate protrudes inward from the unit support section and the housing is attached to the unit support section.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: May 15, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Yuuichirou Ueno, Shinichi Kojima, Norihito Yanagita, Kensuke Amemiya, Hiroshi Kitaguchi, Katsutoshi Tsuchiya, Kazuma Yokoi, Takafumi Ishitsu
  • Patent number: 7202480
    Abstract: The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.
    Type: Grant
    Filed: September 28, 2004
    Date of Patent: April 10, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Kazuma Yokoi, Hiroshi Kitaguchi, Takafumi Ishitsu, Kensuke Amemiya, Yuuichirou Ueno, Katsutoshi Tsuchiya, Norihito Yanagita, Shinichi Kojima
  • Patent number: 7202482
    Abstract: A radiological imaging apparatus comprising a semiconductor detector unit in which a plurality of semiconductor radiation detection elements are installed on a detector mounted substrate in a matrix to constitute a detector unit. A plurality of detector units are releasably mounted on a fixing substrate. This mounting is carried out mating a coupling screw with a threaded hole formed in the detector mounted substrate, the coupling screw being inserted through a through-hole formed in the fixing substrate. The detector mounted substrate is provided with a pair of positioning pins. The positioning pins are inserted into positioning holes, respectively, formed in the fixing substrate, to position the detector unit.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: April 10, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Kazuma Yokoi, Hiroshi Kitaguchi, Katsutoshi Tsuchiya, Takafumi Ishitsu, Kensuke Amemiya
  • Publication number: 20070058773
    Abstract: The image pickup apparatus of the radiological imaging apparatus of the present invention includes many detector units, a ring-shaped detector support member and an X-ray source circumferential transport apparatus. Each of the detector units is attached to the detector support section in a detachable manner. A plurality of radiation detectors provided for the detector units are arranged in three layers in the radius direction of the detector support member and in three columns in the axial direction of the detector support member. Since the radiation detectors are arranged in three layers in the radius direction, it is possible to recognize the detection position of radiation in the radius direction in detail. Furthermore, since the detector units are attached in a detachable manner, it is easy to replace damaged radiation detectors.
    Type: Application
    Filed: September 7, 2006
    Publication date: March 15, 2007
    Inventors: Yuuichirou Ueno, Hiroshi Kitaguchi, Kensuke Amemiya, Kikuo Umegaki, Norihito Yanagita, Shinichi Kojima, Kazuma Yokoi
  • Publication number: 20070057191
    Abstract: The radiological imaging system which can improve an energy resolution and perform a diagnosis with high accuracy includes a bed for carrying an examinee H, first and second imaging apparatuses and disposed along the longitudinal direction of the bed. The first imaging apparatus has a plurality of semiconductor radiation detectors for detecting ?-rays emitted from the examinee H, arranged around the bed, the second imaging apparatus has an X-ray source for emitting X-rays to the examinee H and a radiation detector for detecting X-rays which have been emitted from the X-ray source and passed through the examinee H, and the bed is shared by the first imaging apparatus and the second imaging apparatus.
    Type: Application
    Filed: November 15, 2006
    Publication date: March 15, 2007
    Inventors: Yuuichirou Ueno, Hiroshi Kitaguchi, Katsutoshi Tsuchiya, Kensuke Amemiya, Kazuma Yokoi, Shinichi Kojima, Norihito Yanagita, Takafumi Ishitsu
  • Patent number: 7183557
    Abstract: A radiological imaging apparatus allowing semiconductor radiation detectors to be easily replaced with new ones and densely arranged. Terminals (31cjk) and (33cjk) are provided on a bottom surface of a detector aggregate (40mn) including a plurality of semiconductor radiation detectors (1); the terminals is connected to electrodes (3 and 4) of the detectors (1). A plurality of zero insertion force connectors (56) are provided on a connecting device (33jk) installed on a support substrate (32h). The terminals (31cjk and 33cjk) are detachably attached to the zero insertion force connectors (56) to mount the detector aggregates (40mn) that are the semiconductor radiation detectors (1), on the support substrate (32h). When the detector aggregates (40mn) are attached to the zero insertion force connectors (56), since no frictional force acts on the terminals, the size of the gap between the detector aggregates (40mn) is reduced.
    Type: Grant
    Filed: October 25, 2005
    Date of Patent: February 27, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Kazuma Yokoi, Hiroshi Kitaguchi, Takafumi Ishitsu, Naoyuki Yamada, Kensuke Amemiya, Yuuichirou Ueno, Katsutoshi Tsuchiya, Norihito Yanagita
  • Publication number: 20070034801
    Abstract: A practical semiconductor radiation detector capable of collecting electrons rapidly with a large volume is disclosed. A multiple layers of grid electrodes around an anode formed on a semiconductor element limits the generation of the induced charge signal for the anode to the space in the neighborhood of the anode, while at the same time making it possible to collect the electrons rapidly. As a result of limiting the space for generating the induced charge by the grid electrodes, the energy resolution is improved even for a thick semiconductor element. Also, the capability of rapidly collecting the electrons due to the high field strength generated by the grid electrodes makes a sensitive volume of the whole semiconductor and thus achieves a high radiation detection efficiency.
    Type: Application
    Filed: October 20, 2006
    Publication date: February 15, 2007
    Inventors: Kazuma Yokoi, Hiroshi Kitaguchi, Kikuo Umegaki, Kensuke Amemiya, Yuuichirou Ueno, Norihito Yanagita, Shinichi Kojima
  • Publication number: 20070009082
    Abstract: An X-ray sensor signal processing circuit and method used in an industrial X-ray CT apparatus for processing an output signal of a semiconductor X-ray sensor which detects a pulsed X-ray emitted from an accelerator and passed through an object to be inspected. The circuit includes a first resistor having one terminal connected to the X-ray sensor and an other terminal connected to ground, a first condenser having one end terminal connected to a connection point of the X-ray sensor and the first resistor, an operational amplifier having an inverting input connected to an other terminal of the first condenser, and an integrator having a second resistor and a second condenser each connected to the operational amplifier in parallel. The circuit is configured so that at least bias conditions of the X-ray sensor and the first condenser are returned to a steady state after irradiation of the pulsed X-ray.
    Type: Application
    Filed: September 13, 2006
    Publication date: January 11, 2007
    Inventors: Hiroshi Kamimura, Shigeru Izumi, Hiroshi Kitaguchi, Atsushi Yamagoshi, Katsutoshi Satoh, Noriyuki Sadaoka, Tarou Takagi, Kouji Kuwabara, Shouhei Numata
  • Patent number: 7157716
    Abstract: The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: January 2, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Kitaguchi, Kensuke Amemiya, Kazuma Yokoi, Yuuichirou Ueno, Katsutoshi Tsuchiya, Norihito Yanagita, Shinichi Kojima, Keitaro Hitomi, Tadayoshi Shoji
  • Publication number: 20060293584
    Abstract: An X-ray CT image of a low spatial resolution image is acquired by employing a PET-X-ray CT examination apparatus. Also, a PET image is acquired by employing the PET-X-ray CT examination apparatus. Furthermore, an X-ray CT image of a high spatial resolution image is acquired by employing another X-ray CT examination apparatus. Then, the X-ray CT image equal to the low spatial resolution image is corrected by employing the X-ray CT image, so that an X-ray CT image equal to a high spatial resolution image is obtained. Since a positional relationship of the resulting X-ray CT image with respect to the PET image can be grasped, this PET image can be simply synthesized with the X-ray CT image.
    Type: Application
    Filed: August 8, 2006
    Publication date: December 28, 2006
    Inventors: Shinichi Kojima, Yuuichirou Ueno, Kensuke Amemiya, Norihito Yanagita, Hiroshi Kitaguchi, Katsutoshi Tsuchiya, Kazuma Yokoi
  • Patent number: 7154989
    Abstract: The image pickup apparatus of the radiological imaging apparatus of the present invention includes many detector units, a ring-shaped detector support member and an X-ray source circumferential transport apparatus. Each of the detector units is attached to the detector support section in a detachable manner. A plurality of radiation detectors provided for the detector units are arranged in three layers in the radius direction of the detector support member and in three columns in the axial direction of the detector support member. Since the radiation detectors are arranged in three layers in the radius direction, it is possible to recognize the detection position of radiation in the radius direction in detail. Furthermore, since the detector units are attached in a detachable manner, it is easy to replace damaged radiation detectors.
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: December 26, 2006
    Assignee: Hitachi, Ltd.
    Inventors: Yuuichirou Ueno, Hiroshi Kitaguchi, Kensuke Amemiya, Kikuo Umegaki, Norihito Yanagita, Shinichi Kojima, Kazuma Yokoi
  • Patent number: 7151262
    Abstract: To provide a radioactive gas measurement apparatus that is simply constructed and can efficiently measure Xe-133 in a radioactive gas on-line under the condition that the radioactive gas is mixed with interference N-13, an apparatus is provided for measuring a radiation emitted from Xe-133, including an anticoincidence counter circuit 13 that conducts counting if it receives an output of a main detector 1 when it does not receive outputs of scintillation detectors 2 and 9, and a gate circuit 14, a plate-shaped semiconductor detector is used as the main detector 1, and a material not emitting a characteristic X ray in the range from 70 to 90 keV is used for a shielding structure. In particular, the thickness of the semiconductor detector 1 is set to fall within a range from 2 mm to 7 mm, thereby improving the analysis precision.
    Type: Grant
    Filed: June 22, 2004
    Date of Patent: December 19, 2006
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Kitaguchi, Atsushi Yamagoshi, Shigeru Izumi, Tetsuya Matsui, Akihisa Kaihara
  • Publication number: 20060278828
    Abstract: To provide a radioactive gas measurement apparatus that is simply constructed and can efficiently measure Xe-133 in a radioactive gas on-line under the condition that the radioactive gas is mixed with interference N-13, an apparatus is provided for measuring a radiation emitted from Xe-133, including an anticoincidence counter circuit 13 that conducts counting if it receives an output of a main detector 1 when it does not receive outputs of scintillation detectors 2 and 9, and a gate circuit 14, a plate-shaped semiconductor detector is used as the main detector 1, and a material not emitting a characteristic X ray in the range from 70 to 90 keV is used for a shielding structure. In particular, the thickness of the semiconductor detector 1 is set to fall within a range from 2 mm to 7 mm, thereby improving the analysis precision.
    Type: Application
    Filed: June 22, 2004
    Publication date: December 14, 2006
    Inventors: Hiroshi Kitaguchi, Atsushi Yamagoshi, Shigeru Izumi, Tetsuya Matsui, Akihisa Kaihara
  • Patent number: 7149565
    Abstract: An X-ray CT examination using a radiation examining apparatus corresponding to an X-ray CT is effected on an unbreathed examinee. A tomogram creating apparatus creates a first tomogram, based on an X-ray detect signal outputted from a corresponding radiation detector of the radiation examining apparatus. An X-ray CT examination and a PET examination using a radiation examining apparatus are effected on the breathed examinee. The tomogram creating apparatus creates a second tomogram, based on an X-ray detect signal outputted from a corresponding radiation detector of the radiation examining apparatus and creates a third tomogram, based on a ?-ray detect signal outputted from the corresponding radiation detector. Correction information is created based on the first and second tomograms. The third tomogram is corrected using the correction information. Therefore, the corrected third tomogram can be obtained which is not affected by a swing produced with breathing.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: December 12, 2006
    Assignee: Hitachi, Ltd.
    Inventors: Shinichi Kojima, Kikuo Umegaki, Yuuichirou Ueno, Kensuke Amemiya, Hiroshi Kitaguchi, Takashi Okazaki, Kazuma Yokoi
  • Patent number: 7141797
    Abstract: A practical semiconductor radiation detector capable of collecting electrons rapidly with a large volume is disclosed. A multiple layers of grid electrodes around an anode formed on a semiconductor element limits the generation of the induced charge signal for the anode to the space in the neighborhood of the anode, while at the same time making it possible to collect the electrons rapidly. As a result of limiting the space for generating the induced charge by the grid electrodes, the energy resolution is improved even for a thick semiconductor element. Also, the capability of rapidly collecting the electrons due to the high field strength generated by the grid electrodes makes a sensitive volume of the whole semiconductor and thus achieves a high radiation detection efficiency.
    Type: Grant
    Filed: April 1, 2003
    Date of Patent: November 28, 2006
    Assignee: Hitachi, Ltd.
    Inventors: Kazuma Yokoi, Hiroshi Kitaguchi, Kikuo Umegaki, Kensuke Amemiya, Yuuichirou Ueno, Norihito Yanagita, Shinichi Kojima
  • Publication number: 20060261281
    Abstract: In a gamma camera, a plurality of radiation detector elements having a rod-shaped first electrode, a semiconductor device surrounds the first electrode to contact with it for entering a radiation, and a second electrode provided for the side surface of the semiconductor device are detachably attached to a holding member. The holding member has a first electrode contact portion contacted with the first electrode and a second electrode contact portion contacted with the second electrode. A collimator in which a plurality of radiation paths provided corresponding to the plurality of radiation detector elements are formed is arranged on the radiation entering side of the plurality of radiation detector elements. A ?-ray detection signal outputted from the first electrode contact portion is sent to a signal processing integrated circuit. A high voltage is applied to the second electrode via the second electrode contact portion.
    Type: Application
    Filed: July 24, 2006
    Publication date: November 23, 2006
    Inventors: Katsutoshi Tsuchiya, Hiroshi Kitaguchi, Kazuma Yokoi, Kikuo Umegaki, Kensuke Amemiya, Yuuichirou Ueno, Norihito Yanagita, Shinichi Kojima