Abstract: A high-speed liquid filling machine comprises a conveyor 11 for transporting containers C so as to stop the containers successively at a primary filling station S1 and at secondary filling station S2, a primary filling device 21 and a secondary filling device 22 arranged at the primary and secondary filling stations S1, S2 respectively, a supply device for supplying the same kind of liquid to be filled into the primary and secondary filling devices 21, 22, and a control device for controlling the amount to be filled in by the primary filling device 21 and the amount to be filled in by the secondary filling device 22 so that the combined amount to be filled in by the devices 21, 22 is equal to the capacity of each of the containers.

Abstract: An apparatus for disinfecting containers comprises a disinfection chamber 12 surrounding a required section of a container transport path, partition means for dividing the interior of the disinfection chamber 12 into a preheating zone 35, an exposure zone 36 and a drying zone 37 as arranged downstream from an upstream side of the transport path, antiseptic supply means for supplying hydrogen peroxide gas or mist to the exposure zone 36, and means for supplying hot air to the preheating zone 35 and the drying zone 37.

Abstract: In the vicinity of the (100) plane, planar channeling by (100) type crystal planes, which are (011) plane and (011) plane according to the (100) surface plane, degrades uniformity of ion implantation. Therefore, a major surface of the substrate is established at a plane perpendicular to a crystal orientation forming an angle greater than or equal to 3.5.degree. with two planes perpendicularly intersecting the (100) plane. Namely, in consideration of fluctuation in setting to an ion implantation device and ion implantation angle, the substrate having surface orientation within a range 104 is employed. Also, by limiting the orientation to be less than or equal to 10.degree. from the (100) plane, ion implantation can be performed perpendicularly to the substrate without modifying the process condition.

Abstract: In a method for generating electrolyzed water, pre-electrolyzed solution is added in water to be electrolyzed at least at the beginning of electrolyzing processing.

Abstract: An ion implantation method is provided, which is able to improve the controllability of implanted dopant ions and the uniformity in concentration and profile of implanted dopant ions. A semiconductor substrate with a (100)-oriented crystal surface is prepared. An elongated mask with a specific pattern is formed on the surface of the substrate. A beam of dopant ions is irradiated to the surface of the substrate along a first direction, thereby selectively implanting the dopant ions into the substrate using the mask. The first direction has a first angle with a normal of the surface of the substrate in a plane perpendicular to a longitudinal axis of the mask, where the first angle is in the range from 7.degree. C. to 60.degree. C. The first direction has a second angle with a lateral axis of the mask in a plane parallel to the surface of the substrate, where the second angle is in the range from 5.degree. C. to 20.degree. C.

Abstract: There is provided a method of, and an apparatus for obtaining electrolytically activated water having stable characteristics comprising steps of bringing a gas containing at least one of chlorine, hydrogen chloride, hydrogen bromide and hydrogen iodide into contact with a liquid in an anode cell of an electrolytic cell or a liquid supplied thereto and/or bringing ammonia into contact with a liquid in a cathode cell of the electrolytic cell, or a liquid supplied thereto to dissolve the gas to thereby electrolyze this liquid. The resulting electrolytically activated water is optimal as the wet treating solution adapted for semiconductor substrate.

Abstract: Thienylazole compounds (I) and thienotriazolodiazepine compounds (II) of the formulas ##STR1## wherein R.sup.1 and R.sup.2 are hydrogen, halogen, C.sub.1 -C.sub.5 alkyl and the like; --A.dbd.B-- is --N.dbd.N-- and the like; R.sup.3 and R.sup.19 are hydrogen, C.sub.1 -C.sub.5 alkyl and the like; Y is --NHCO--, --NHCONH--, --NHCOO-- and the like; Z.sup.1 and Z.sup.2 are aryl, heteroaryl and the like; Ar is halogen-substituted phenyl and the like; and m is 0 or an integer of 1-5.The compounds of the present invention have CCK antagonistic action and gastrin antagonistic action, particularly potent antagonistic action against CCK-A receptor, and are useful as agents for the prophylaxis and treatment of central and peripheral nervous system diseases (e.g., anxiety, schizophrenia, and the like) and digestive diseases (e.g., pancreatitis, gastric ulcer, enterelcosis, irritable bowel syndrome, constipation, and the like).

Abstract: In a wet processing apparatus, an electrolytic cell, a first storing cell for storing anode active water of the electrolytic cell, a first processing cell for processing a target with the anode active water of the first storing cell, a second storing cell for storing cathode active water of the electrolytic cell, and a second processing cell for processing a target with the cathode active water of the second storing cell are provided. Also, a first reactivating feedback path is provided between the first processing cell and an anode region of the electrolytic cell, and a second reactivating feedback path is provided between the second processing cell and a cathode region of the electrolytic cell.

Abstract: A parking garage in which parking zones are arranged at both sides of a self-running lane, and slat conveyers are arranged at the lane and the parking zones, such that a vehicle that has run on the lane is conveyed to one of the parking zones by the slat conveyers. At exit, a vehicle in one of the parking zones is conveyed to the self-running lane by the slat conveyers, and it runs by itself on the lane to exit the garage.

Abstract: A MOS type semiconductor device includes a thin-film semiconductor, a gate oxide film, and a gate. The thin-film semiconductor has a drain region, a source region, and a channel region arranged between these two regions. The gate oxide film is formed on the thin-film semiconductor. The gate is formed in correspondence with the channel region via the gate oxide film. The thin-film semiconductor is formed such that the film thickness of the drain region and the source region is made smaller than the film thickness of the channel region.

Abstract: A semiconductor device comprising a MOS transistor made at the surface of a p-type silicon substrate with a ridge on the surface of it and covered with an insulating film. The gate electrode of the MOS transistor has a configuration of the ridge covered with the insulating film. The semiconductor further comprises a TFT build under the utilization of the ridge. The channel region of the TFT is formed only on the side face(s) of the gate electrode. The source and drain regions extending across the ridge are disposed on the opposite sides of, and connect to, the channel region. Thus the channel region of the TFT is perpendicular to the surface of the silicon substrate, and the channel current flows parallel to the surface of the silicon substrate. The channel width of the TFT is determined substantially by the height of the gate electrode of MOS transistor, and hence becomes narrower than the minimum processible size. This TFT therefore is capable of size reduction.

Abstract: A speed measuring apparatus includes a light projecting unit having a light source for emitting light, a projection optical system for projecting the light from the light source onto a relatively moving object and a first polarizer included in a part of the projection optical system for allowing the passage of polarized light from the light source as projected light. A light receiving unit includes a second polarizer allowing the passage of polarized light in a direction at right angles to the direction of polarization of the projected light reflected from the relatively moving object and a spatial filter detector for taking out a predetermined spatial frequency of the light passed through the second polarizer and outputting an electrical signal representing the frequency. The relative speed of the relatively moving object is calculated on the basis of the signal from the spatial filter detector.

Abstract: There is provided a laser speckle velocity-measuring apparatus comprising: a semiconductor laser to irradiate the light to a moving object; first and second photo sensing devices whose light receiving points are arranged in the moving direction of the objects at a predetermined distance so as to be away from each other; a clock signal generating and control circuit for determining a clock frequency of the clock signal so that the number of clocks of the clock signal is always set to a constant value when the delay time of the photo sensing signal of the second photo sensing device for the photo sensing signal of the first photo sensing device is measured by the clock signals; and an arithmetic operating circuit for counting the clock signals and calculating the length, moving distance, or velocity of the object on the basis of the count value.

Abstract: A device for cutting off the neck meat of a fowl in which the neck of the fowl is held on a support equipped with a suction hole for attracting the meat and the meat is cut by a blade disposed movably to face said suction holes of said support. Said cutting blade is a straight member and is allowed to reciprocate along the length of the suction hole.