Abstract: A method of fabricating a liquid crystal display device including a field effect transistor includes forming a gate electrode on an electrically insulating substrate, the gate electrode being located in a transistor region of the substrate; forming an electrically insulating film on the substrate and covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode in the transistor region; forming a display electrode on the electrically insulating substrate in a display region of the substrate, adjacent the transistor region, the drain electrode being electrically connected to the display electrode; and forming, in the transistor region, a semiconductor film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes in the transistor region; arranging a transparent plate, including a transparent electrode, opposite and spaced from the .pi.

Abstract: A method of fabricating a field effect transistor including forming a gate electrode on an electrically insulating substrate; forming an electrically insulating film on the substrate covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; forming a semiconducting film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes.

Abstract: When a fine pattern is formed by using a chemical-amplification-type resist film, fall of acid in the surface of the resist can be inhibited so that a fine pattern exhibiting an excellent shape is formed. A resist coating film containing a compound having a sulfonic acid group or a carbonic acid group is formed on a chemical-amplification-type resist film of a semiconductor substrate, followed by performing exposure.

Abstract: A photoresist is applied on a substrate and exposed using a reduction optical system. The photoresist is adapted to have a non-linear optical effect in which the light absorption coefficient or the photochemical reaction efficiency changes non-linearly with respect to light intensity, the photoresist reacts to the second harmonic or the tertiary harmonic, or it presents a self convergence effect.

Abstract: The present invention relates to a field effect transistor (FET element) in which a .pi.-conjugated polymer film serving as a semiconductor layer is manufactured by first forming a .pi.-conjugated polymer precursor film using a .pi.-conjugated precursor which is soluble in a solvent and then changing the precursor polymer film to the .pi.-conjugated polymer film. A liquid crystal display apparatus uses the FET element as an active drive element. A large number of the FET elements can be manufactured on a large area substrate at the same time at lost cost and operate stably. A large current flow between the source and drain can be significantly modulated by a voltage applied to the gate of the FET element.

Abstract: A field effect transistor has a channel between a source electrode and a drain electrode made from an organic semiconductor. In one form of the invention, the channel is a mixture of at least two different organic compounds. In another form of the invention, the channel is a lamination of at least two films of different organic compounds. The channel can also be a .pi.-conjugated block copolymer of at least two different types of monomers.

Abstract: Disclosed herein is a photosensitive resin composition containing:a photobase generator expressed in the following general formula (I): ##STR1## where R.sub.1, R.sub.2 and R.sub.3 are individually selected from the group consisting of hydrogen, halogen, alkyl groups, alkenyl groups, alkinyl groups, phenyl groups and alkoxy groups; anda base-catalytic reaction compound which is cured or decomposed under basic conditions.

Abstract: A film of a first .pi.-conjugated polymer is used as at least one of the source and the drain of a field-effect transistor, and a film of a second .pi.-conjugated polymer which differs from the first .pi.-conjugated polymer is used as a semiconductor layer in the field-effect transistor.

Abstract: A radiation-sensitive polymer is capable of resistance to the dry etching when it is applied to form very fine patterns in VLSIs and other semiconductor devices, wherein the polymer is a radiation-sensitive polymer that contains at least one unit represented by the general formula (I): ##STR1## (where X is an alkyl group, a halogen atom or a halogenated alkyl group; R.sup.1 is an alkyl group, an alkoxy or an aryl group; R.sup.2 is carbon monoxide; M is Si, Ge, Sn, Ti, Mo or W; k is a number defined by the valence of (M minus 1); and l is zero or a positive integer), and which optionally contains at least one unit represented by the general formula (II): ##STR2## (where Y is an alkyl group, a halogen atom or a halogenated alkyl group; R.sup.3 is an alkyl group or an aryl group) and/or at least one unit represented by the general formula (III):--SO.sub.2 --R.sup.4 (III)(where R.sup.4 is a divalent alkyl or aryl group).

Abstract: A resin-sealed semiconductor device includes a semiconductor element mounted on a die frame, bonding wires and external wires connected to the bonding wires. The semiconductor element, the bonding wires and portions of the external leads are coated with porous silica gel impregnated with a sealing resin.

Abstract: The present invention relates to a hetero-junction device comprising a hetero-junction formed at the interface of two .pi.-conjugated system polymers (A) and (B) wherein on the first .pi.-conjugated system polymer (A) a second .pi.-conjugated polymer (B) different from said polymer (A) is deposited thereby making it possible to control junction properties by altering the quantity of doping to the polymer.