Abstract: A light emitting element for a blue light emitting diode which consists of a semiconductor substrate crystal, a II-VI compound semiconductor layer having an n-type conduction of low resistivity and a II-VI compound semiconductor layer having a p-type conduction of low resistivity, wherein each layer is deposited from a vapor phase on the substrate crystal.

Abstract: A blue light emitting diode which has a multiple layer structure and is grown on a semiconductor crystalline substrate, wherein zinc of a group II element of the periodic table, lithium, sodium, or potassium of group VI elements are used. These elements and their compounds are used as impurities to be introduced into the construction when it is at the condition of vapor growing. A blue light emitting diode has a pair of Ohmic electrodes, an n-type semiconductor layer and a p-type semiconductor layer. These layers are grown from a vapor phase on the substrate and sandwiched between the electrodes.

Abstract: There is disclosed a fluorescent composition exhibiting high luminance under low velocity electron excitation having the formula (Zn.sub.1-x Cd.sub.x)S:Ag, Al wherein x is 0.25.ltoreq.x.ltoreq.0.95, Ag is 1.times.10.sup.-5 to 10.sup.-3 atom/mole and Al is 1.2.times.10.sup.-3 to 5.times.10.sup.-2 atom/mole and a fluorescent display apparatus containing the same.

Abstract: A fluorescent composition containing indium oxide and rare earth elements which can emit green, blue or red light under low-velocity electron excitation.