Patents by Inventor Hiroshi Marui

Hiroshi Marui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor device
    Patent number: 8592841
    Abstract: A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10?3 ?cm.
    Type: Grant
    Filed: February 1, 2008
    Date of Patent: November 26, 2013
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Takashi Mukai, Koji Tanizawa, Tomotsugu Mitani, Hiroshi Marui
  • Nitride semiconductor
    Publication number: 20080149955
    Abstract: A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10?3 ?cm.
    Type: Application
    Filed: February 1, 2008
    Publication date: June 26, 2008
    Applicant: Nichia Corporation
    Inventors: Shuji Nakamura, Takashi Mukai, Koji Tanizawa, Tomotsugu Mitani, Hiroshi Marui
  • Nitride semiconductor device
    Patent number: 7365369
    Abstract: A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10?3?cm.
    Type: Grant
    Filed: July 27, 1998
    Date of Patent: April 29, 2008
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Takashi Mukai, Koji Tanizawa, Tomotsugu Mitani, Hiroshi Marui
  • NITRIDE SEMICONDUCTOR DEVICE
    Publication number: 20030010993
    Abstract: A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm 3, and the resistivity can be lowered below 8×10−3&OHgr;cm.
    Type: Application
    Filed: May 1, 2000
    Publication date: January 16, 2003
    Inventors: SHUJI NAKAMURA, TAKASHI MUKAI, KOJI TANIZAWA, TOMOTSUGU MITANI, HIROSHI MARUI