Abstract: A capacitor that includes a lower electrode; a dielectric film; an upper electrode; a first protective film that has a first through hole that opens to the upper electrode and a second through hole that opens to the lower electrode, and has a first upper surface; a second protective film that has a second upper surface located higher than the first upper surface of the first protective film; a first terminal electrode electrically connected to the upper electrode through the first through hole, and extends to at least the second upper surface of the second protective film; and a second terminal electrode electrically connected to the lower electrode through the second through hole, and extends to at least the second upper surface of the second protective film.

Abstract: A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface opposed to each other, and a porous metal oxide film on a side of the first main surface of the semiconductor substrate, the porous metal oxide film having a plurality of pores. The semiconductor substrate has a connection electrically connected to the porous metal oxide film, and the semiconductor substrate is configured to provide a power supply path from the second main surface to the connection on the first main surface.

Abstract: A capacitor that includes a substrate, a lower electrode on the substrate, a dielectric film on the lower electrode, an upper electrode on a part of the dielectric film, a protective layer that covers the lower electrode and the upper electrode, and an external electrode that penetrates the protective layer. The external electrode is formed only in a region defined by a periphery of the upper electrode in a plan view of the capacitor viewed from an upper surface thereof towards the substrate.

Abstract: A capacitor that includes a substrate; a capacitor structure including a lower electrode on the substrate, a dielectric film on the lower electrode and having a via hole, and an upper electrode on the dielectric film; a first terminal electrode in the via hole and electrically connected to the lower electrode; and a second terminal electrode electrically connected to the upper electrode. The width of the via hole of the dielectric film is less than or equal to twice the film thickness of the first terminal electrode.

Abstract: A capacitor that includes a substrate having a surface; a lower electrode opposing the surface of the substrate; a dielectric film on the lower electrode; an upper electrode on the dielectric film; a protective layer on the lower electrode, the dielectric film, and the upper electrode, the protective layer defining a through-hole exposing at least one of the lower electrode and the upper electrode; at least one protrusion in the through-hole; and an outer electrode covering the through-hole and the at least one protrusion.

Abstract: A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.

Abstract: A capacitor that includes a substrate, a lower electrode on the substrate, a dielectric film on the lower electrode, an upper electrode on a part of the dielectric film, a protective layer that covers the lower electrode and the upper electrode, and an external electrode that penetrates the protective layer. The external electrode is formed only in a region defined by a periphery of the upper electrode in a plan view of the capacitor viewed from an upper surface thereof towards the substrate.

Abstract: A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.

Abstract: The support stiffness of a suspension supporting portion can be improved to reduce floor vibration. Arm front-end supporting portions, each supporting a front end portion of a trailing of a rear suspension, are formed on lower portions of rear frames extending in a vehicle longitudinal direction, and each include a squared U-shape portion including outer, inner and front wall portions, with a rear side being open when viewed from the bottom, and an extending outer wall portion extending from the outer wall portion to in front of the front wall portion. The outer wall portion and extending outer wall portion are formed by a side sill inner portion joined to each rear side frame. Also, each arm front-end supporting portion includes an extending inner wall portion extending from the inner wall portion to in front of the front wall portion and joined to each of the rear side frames.

Abstract: A filter includes a first input/output electrode and the second input/output electrode, and is arranged on a first main surface of a mounting substrate. The mounting substrate includes a first land electrode, a second land electrode, a ground terminal, and a plurality of via conductors. The first land electrode is connected to the first input/output electrode. The second land electrode is connected to the second input/output electrode. The ground terminal is located closer to a second main surface side than the first main surface in a thickness direction of the mounting substrate. The plurality of via conductors is arranged between the first main surface and the second main surface, and is connected to the ground terminal. The plurality of via conductors is located between the first land electrode and the second land electrode in a plan view from the thickness direction of the mounting substrate.

Abstract: A high-frequency module includes a mounting substrate, a filter, and a common inductor. The mounting substrate includes a first main surface and a second main surface facing each other. The filter includes series arm resonators and parallel arm resonators, and is disposed on the first main surface. The mounting substrate includes a ground terminal on the second main surface. A first end of the common inductor is connected to all of the parallel arm resonators. A second end of the common inductor is connected to the ground terminal.

Abstract: A filter includes a resonant circuit defining at least a portion of a signal path connected between a first terminal and a second terminal, an elastic wave resonator including one end that is grounded, a first inductor including one end connected to one end of the resonant circuit and another end connected to another end of the elastic wave resonator, and a second inductor including one end connected to another end of the resonant circuit and another end connected to the other end of the elastic wave resonator. The resonant circuit is an LC series resonant circuit in which a third inductor and first and second capacitors are connected in series with each other.

Abstract: A plurality of capacitors and a holding body constructed to hold the plurality of capacitors. Each of the plurality of capacitors includes a semiconductor substrate, a first electrode layer, a dielectric layer, a second electrode layer, and an outer electrode. Among a first capacitor and a second capacitor of the plurality of capacitors, the second capacitor has a shape different from a shape of the first capacitor in at least one of the first electrode layer, the second electrode layer, and the outer electrode.

Abstract: A multiplexer includes a first matching circuit having one end connected to a common terminal; a first filter that has one end connected to the other end of the first matching circuit and the other end connected to a first terminal; a second matching circuit having one end connected to the common terminal; a second filter that has one end connected to the other end of the second matching circuit and the other end connected to a second terminal; and a third filter that has one end connected to the common terminal and the other end connected to a third terminal. The first matching circuit includes a first inductor connected on a first signal path in the first matching circuit. The second matching circuit includes a second inductor connected between a second signal path in the second matching circuit and ground.

Abstract: A hybrid multiplexer includes a filter configured to allow a high-frequency signal of an HB to pass therethrough, and a filter configured to allow a high-frequency signal of an MB to pass therethrough, in which the filter includes a matching circuit, a first resonance circuit defined by one of an LPF and an HPF, and a second resonance circuit defined by the other of the LPF and the HPF, the LPF includes an inductor and a parallel arm resonator, the HPF includes a serial arm resonator and an inductor, and a resonant frequency of the parallel arm resonator and an anti-resonant frequency of the serial arm resonator are both located between a frequency at a low-band end of the HB and a frequency at a high-band end of the HB.

Abstract: A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface opposed to each other, and a porous metal oxide film on a side of the first main surface of the semiconductor substrate, the porous metal oxide film having a plurality of pores. The semiconductor substrate has a connection electrically connected to the porous metal oxide film, and the semiconductor substrate is configured to provide a power supply path from the second main surface to the connection on the first main surface.

Abstract: A filter circuit that secures the steepness from a pass range to an attenuation range while maintaining a wide-band transmission characteristic and a filter device including this filter circuit are formed. A filter circuit includes a first filter and a second filter. The first filter is a filter including an LC circuit in which a first frequency band is a pass band and a frequency band not higher than the first frequency band is an attenuation band. The second filter is a filter that attenuates a second frequency band within the first frequency band by using an attenuation pole produced by a resonance or an antiresonance of an acoustic wave resonator. Further, the first filter is placed closer to an antenna terminal than the second filter.

Abstract: A radio-frequency front end circuit includes an input terminal, output terminals, a first filter, a third filter, and a matching inductor. The first filter is connected between the input terminal and the output terminal and allows a first communication signal in a low band to pass. The first filter is defined by an elastic wave filter. The third filter is connected between the input terminal and the output terminal and allows a third communication signal in a high band to pass. The third filter is defined by a high pass filter including an inductor and capacitors. The matching inductor is connected between the filter and the input terminal.

Abstract: A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.

Abstract: A capacitor that includes a lower electrode; a dielectric film; an upper electrode; a first protective film that has a first through hole that opens to the upper electrode and a second through hole that opens to the lower electrode, and has a first upper surface; a second protective film that has a second upper surface located higher than the first upper surface of the first protective film; a first terminal electrode electrically connected to the upper electrode through the first through hole, and extends to at least the second upper surface of the second protective film; and a second terminal electrode electrically connected to the lower electrode through the second through hole, and extends to at least the second upper surface of the second protective film.