Abstract: There is provided a waterproof connector. The waterproof connector comprises a connector member supporting a ferrule to be butted against a target ferrule disposed in a target connector, the connector member being adapted to be locked to an adapter member of the target connector by an action of a lock operation portion provided in the connector member; unlocking means being adapted to operate the lock operation portion to release the locked state; and a housing body allowing the unlocking means to be slidably moved. The waterproof connector is adapted to be released from the connection with the target connector in such a manner that the unlocking means is allowed to be moved away from the connector member, whereby the unlocking means is operable to operate the lock operation portion to release the locked state, and to move the connector member away from the adapter member to release the fitting.

Abstract: An optical access network system for making a connection between a central-office optical cable and a subscriber optical cable is provided, the optical access network system being capable of facilitating the operation of laying optical cable. The optical access network system includes a connecting optical cable for forming a connection with one or a plurality of the subscriber optical cables, the connecting optical cable being obtained by assembling together a plurality of component cables having the same number of fibers as the one or plurality of subscriber optical cables. This optical access network system preferably further includes a subscriber enclosure for connecting one of the subscriber cables from among the one or plurality of subscriber optical cables and one of the component cables from among the plurality of component cables of the connecting cable.

Abstract: An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

Abstract: An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

Abstract: An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

Abstract: The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is executed in a state wherein a flow of a reducing atmospheric gas parallel to the surface of the SOI substrate is generated near this surface.

Abstract: The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is executed in a state wherein a flow of a reducing atmospheric gas parallel to the surface of the SOI substrate is generated near this surface.