Abstract: A substrate processing apparatus includes a film forming processing unit configured to form a metal-containing resist film on a substrate; a heat treatment unit configured to perform a heating processing on the substrate on which the film is formed and in which an exposure processing is performed on the film; a developing processing unit configured to perform a developing processing on the film formed on the substrate on which the heating processing is performed; and an adjustment controller configured to reduce a difference between substrates in an amount of water that reacts in the film formed on the substrate during the heating processing.

Abstract: There is provided a substrate processing apparatus, including: a film forming part configured to form a metal-containing film on a front surface of a substrate; a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and a controller. The controller is configured to control the film forming part so as to form the metal-containing film on the front surface of the substrate, and control the film cleaning part so as to supply a first chemical liquid and a second chemical liquid.

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

Abstract: A substrate processing apparatus includes a film forming processing unit configured to form a metal-containing resist film on a substrate; a heat treatment unit configured to perform a heating processing on the substrate on which the film is formed and in which an exposure processing is performed on the film; a developing processing unit configured to perform a developing processing on the film formed on the substrate on which the heating processing is performed; and an adjustment controller configured to reduce a difference between substrates in an amount of water that reacts in the film formed on the substrate during the heating processing.

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

Abstract: There is provided a substrate processing apparatus, including: a film forming part configured to form a metal-containing film on a front surface of a substrate; a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and a controller. The controller is configured to control the film forming part so as to form the metal-containing film on the front surface of the substrate, and control the film cleaning part so as to supply a first chemical liquid and a second chemical liquid.

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

Abstract: A coating and developing apparatus 2 includes a first protection processing unit U01, a film forming unit U02, a first cleaning processing unit U03 and a control unit U08. The control unit U08 is configured to control the first protection processing unit U01 to form a first protective film on a peripheral portion Wc of a wafer W, control the film forming unit U02 to form a resist film on a front surface Wa of the wafer W, control the first cleaning processing unit U03 to supply a first cleaning liquid for removing the resist film to the peripheral portion Wc, control the first cleaning processing unit U03 to supply a second cleaning liquid for removing a metal component to the peripheral portion Wc, and control the first cleaning processing unit U03 to supply a third cleaning liquid for removing the first protective film PF1 to the peripheral portion Wc.

Abstract: A coating and developing apparatus 2 includes a first protection processing unit U01, a film forming unit U02, a first cleaning processing unit U03 and a control unit U08. The control unit U08 is configured to control the first protection processing unit U01 to form a first protective film on a peripheral portion Wc of a wafer W, control the film forming unit U02 to form a resist film on a front surface Wa of the wafer W, control the first cleaning processing unit U03 to supply a first cleaning liquid for removing the resist film to the peripheral portion Wc, control the first cleaning processing unit U03 to supply a second cleaning liquid for removing a metal component to the peripheral portion Wc, and control the first cleaning processing unit U03 to supply a third cleaning liquid for removing the first protective film PF1 to the peripheral portion Wc.

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.