Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Abstract: A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded.

Abstract: A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7?, 9? on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7?, 9?, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7?, 9?.

Abstract: In a facsimile device, a CPU determines whether or not a recording sheet is conveyed normally based on the conveyance state detected by a detecting portion. When the CPU determines that the recording sheet has been conveyed normally, the CPU increases the conveying speed in a stepwise manner based on the current conveying speed until the conveying speed reaches maximum speed. Therefore, according to the present facsimile device, when conveyance of the recording sheet is normally performed at a specified conveying speed, the number of failures of conveyance of the recording sheet can be reduced compared to a facsimile device, in which the conveying speed is set at maximum speed of conveyance by a sheet feed roller. Also, the recording sheet can be conveyed at as high speed as possible.

Abstract: A technique is proposed to provide an appropriate notification in accordance with the state of occurrence of conveyance errors. The level of maintenance required to normalize a conveying function is determined depending on the number of errors, and a notification is provided by displaying a message to a user or by transmitting a message to a service center depending on the level of maintenance. Since the message to the user indicates a specific content of maintenance to normalize the conveying function, the user can normalize the conveying function by taking appropriate measures. On the other hand, since the message to the service center indicates the required level of maintenance, a service person of the service center can normalize the conveying function by going to a place where a multi-function machine, for example, is installed and repairing the multi-function machine.

Abstract: While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen atmosphere to oxidize Si, forming a nanoparticle oxide thin film consisting of SiO2.

Abstract: A bipolar transistor is composed of a collector region, a base region connected to the collector region, an emitter region connected to the base region, an emitter electrode, a base electrode, and at lease one of first and second resistive layers of granular metal-dielectric material. The first resistive layer is disposed between the emitter region and the emitter electrode, and the second resistive layer is disposed between the base region and the base electrode. The resistivity of granular metal-dielectric material is widely adjustable by a volume ratio of metal granules to a dialectic matrix. This allows the resistive layers to have a sufficiently large perpendicular resistance to avoid thermal runaway with a reduced thickness.

Abstract: In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a mixture gas containing an oxygen gas in a chamber.

Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

Abstract: To enable a main terminal device to implement specific functions in cooperation with a sub terminal device, when a fax machine serving as the main terminal device stores conversion request data in a shared area of its RAM (S130), a personal computer serving as the sub terminal device generates converted image data based on the conversion request data stored on the fax machine end and stores the resulting data on the fax machine end. Subsequently, the fax machine reads the converted image data stored by the personal computer and transmits this image data. In this way, the fax machine can direct the personal Computer to execute part of the process simply by storing request data in a shared area of the RAM, thereby transmitting converted image data in cooperation with the personal computer.

Abstract: A communication system including a communication device (multifunction device) and a terminal device (personal computer) enables communication details in the communication device to be saved and managed more easily on the terminal device end. When image data is stored in a RAM of the multifunction device in a shared area thereof, this data is automatically recorded to the personal computer end. Hence, after the multifunction device stores image data transmitted or received through facsimile communications, the user need not perform an operation on the personal computer to record this data on the personal computer end. Further, if the available capacity in the shared area is insufficient to store the received image data, the multifunction device stores the image data in the shared area one page at a time.

Abstract: In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a mixture gas containing an oxygen gas in a chamber.

Abstract: A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded.

Abstract: In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. Then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a gas mixture containing an oxygen gas in a chamber.

Abstract: The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitting layer section 24 and the ITO electrode layer 8, an electrode contact layer 7 composed of In-containing GaAs is located so as to contact with such ITO electrode layer 8, where occupied areas and unoccupied areas for the electrode contact layer 7 are arranged in a mixed manner on the contact interface with the transparent electrode layer 8. The electrode contact layer 7 can be obtained by annealing a stack 13, which comprises a GaAs layer 7″ formed on the light emitting layer section 24 and the ITO electrode layer 8 formed so as to contact with the GaAs layer 7″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer 7″.

Abstract: The invention provides a image duplicating apparatus capable of forming images for duplication using standard four ink colors in a standard color style, or using more ink colors than the standard ink colors when duplicating images read from an original on a recording paper. A CPU determines which of the single-copying mode, where images read from the original are duplicated on a sheet of the recording paper, or the multi-copying mode, where images read from the original are duplicated on the sheets of the recording paper, is set. When it is determined that the multi-copying mode is set, the CPU starts duplicating in the standard color style. When it is determined that the single-copying mode is set, the CPU starts duplicating in the fine color style.

Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Abstract: A multi-function peripheral device and method for printing from a multi-function peripheral device are presented. When a facsimile function is executed, half of an empty area of a flex memory and a FAX transmission/reception memory are set as a FAX transmission/reception memory. When a printer function is executed, half of an empty area of the flex memory and a printer memory are set as a printer memory. When a printer priority function is executed, all the empty area of the flex memory and the printer memory are set as a printer memory.

Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

Abstract: A document reading device is provided with a reading unit for reading a document and generating image data corresponding to an image formed on the document. The image data is stored in an external memory that is detachably attached to a slot of the device. The operation for storing the image data to the external memory is interrupted if the external memory is removed from the slot after the document reading is started. Thereafter, when the external memory is reattached to the document reading device, the image storing operation is restarted.