Abstract: A substrate processing apparatus includes a process module that includes: a stage having a first surface on which a substrate is placed and a second surface, a process module including an edge ring placed on the second surface, a measurement unit measuring an etching rate of the substrate; and a controller. The controller transfers the substrate to different transfer positions on the first surface and etches the substrate for each transfer position, acquires etching rates at points on a concentric circle of the substrate in an end of the substrate, for each transfer position, from the measurement unit, generates an approximate curve of each of the concentric circles based on each of the acquired etching rates for each transfer position, calculates each linear expression representing a movement direction of the substrate, based on the approximate curve for each transport position, and calculates an intersection coordinate of the linear expressions.

Abstract: A temperature estimation apparatus includes an estimation unit configured to successively estimate temperature data by successively inputting given time series process data relating to conditions inside a processing space in which plasma processing is performed, into a time series model generated in advance that correlates data values, in each time period, of time series process data relating to conditions inside the processing space, with a data value, at a respective time point, of time series temperature data measured inside the processing space.

Abstract: A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

Abstract: A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

Abstract: A substrate processing apparatus includes a process module that includes: a stage having a first surface on which a substrate is placed and a second surface, a process module including an edge ring placed on the second surface, a measurement unit measuring an etching rate of the substrate; and a controller. The controller transfers the substrate to different transfer positions on the first surface and etches the substrate for each transfer position, acquires etching rates at points on a concentric circle of the substrate in an end of the substrate, for each transfer position, from the measurement unit, generates an approximate curve of each of the concentric circles based on each of the acquired etching rates for each transfer position, calculates each linear expression representing a movement direction of the substrate, based on the approximate curve for each transport position, and calculates an intersection coordinate of the linear expressions.

Abstract: A temperature estimation apparatus includes an estimation unit configured to successively estimate temperature data by successively inputting given time series process data relating to conditions inside a processing space in which plasma processing is performed, into a time series model generated in advance that correlates data values, in each time period, of time series process data relating to conditions inside the processing space, with a data value, at a respective time point, of time series temperature data measured inside the processing space.

Abstract: A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part.

Abstract: A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.

Abstract: A processing apparatus that processes an substrate inside a processing container includes a first electrode disposed inside the processing container, the first electrode being configured to mount the substrate, a second electrode disposed so as to face the first electrode, an electric power supply unit configured to apply high frequency power to the first electrode or the second electrode, a coil disposed on a surface opposite to the surface to which the first electrode or the second electrode faces and on a surface of any one of the first electrode and the second electrode, one end of the coil being connected to the any one of the the first electrode and the second electrode, another end of the coil being connected to ground, and an adjusting mechanism configured to control a magnetic field strength of a magnetic field that is from the coil and passes through the coil.

Abstract: A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part.

Abstract: A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.

Abstract: A plasma processing method can suppress both surface roughness of a wiring and surface roughness of a metal mask. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas to etch a diffusion barrier film until a copper wiring is exposed and generating plasma of a second processing gas containing a carbon-containing gas to form an organic film on a surface of a target object in which the diffusion barrier film is etched.

Abstract: A plasma processing method can suppress both surface roughness of a wiring and surface roughness of a metal mask. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas to etch a diffusion barrier film until a copper wiring is exposed and generating plasma of a second processing gas containing a carbon-containing gas to form an organic film on a surface of a target object in which the diffusion barrier film is etched.

Abstract: A pattern forming system includes: a forming device configured to form a pattern by etching a film on a substrate in a processing vessel; a member in the processing vessel that is positioned in the processing vessel to increase uniformity of the pattern in a surface of the substrate; a measurement apparatus configured to measure a shape or a critical dimension of the pattern; a control device configured to control a temperature of the member in the processing vessel; a processing gas supply unit configured to introduce a processing gas to the processing vessel; and an exhaust device configured to depressurize an inside of the processing vessel to a certain pressure level. The control device is configured to control the temperature of the member in the processing vessel based on the measured shape or the measured critical dimension of the pattern through a feedback control.

Abstract: A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.

Abstract: A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.

Abstract: A plasma processing method includes the steps of: loading a substrate on a lower electrode, the substrate having a resist mask formed on a transcription film; supplying a processing gas into a processing chamber; forming a magnetic field, which is oriented toward one direction and perpendicular to a line connecting an upper and the lower electrode; supplying a high frequency power to the lower electrode in the processing chamber to thereby form an electric field; converting the processing gas into a plasma by a magnetron discharge caused by a presence of an orthogonal electromagnetic field; and forming lenses on the transcription film by using the plasma. The high frequency power is supplied to the lower electrode while controlling the magnitude of the electric power divided by a surface area of the substrate to be in a range from about 1200 W/31415.9 mm2 to 2000 W/31415.9 mm2.

Abstract: [Object] In forming micro lenses, a transcription film formed on a wafer is etched via a resist mask to thereby reduce distances between the micro lenses in a short period of time. [Constitution of the Invention] In performing an etching, a processing gas containing CF4 and C4F8 gas is supplied to a processing chamber and a high frequency power is supplied to a lower electrode such that the magnitude of the power divided by a surface area of a substrate is in a range from about 1200 W/31415.9 mm2 to 2000 W/31415.9 mm2. By converting the processing gas into a plasma, a deposition of deposits on sidewalls of the lenses formed on the resist mask is performed while performing the etching of the wafer, thereby forming the micro lenses.