Abstract: In a battery system, a battery module includes a plurality of cells. A management unit manages charging-discharging of the battery module and a temperature inside the battery module. The management unit estimates a maximum temperature of an inside of a cell in the battery module based on a measured temperature in the battery module, and controls, during charging-discharging of the battery module, a charging-discharging current of the battery module and/or cooling of the battery module in such a way that the estimated maximum temperature does not exceed an upper limit temperature.

Abstract: A semiconductor device includes a first plurality of conductive layers stacked one on the other via an insulating layer and a second plurality of conductive layers above the first plurality. A semiconductor film passes through the conductive layers in a stacking direction. A charge storage film is between the semiconductor film and the stacked conductive layers. A dummy memory cell is at a position where an uppermost conductive layer among the first plurality of conductive layers meets and the semiconductor film. A memory cell is at a position where a second conductive layer among the first plurality meets the semiconductor film. A missing amount of an upper corner of the first conductive layer is larger than a missing amount of an upper corner of the second conductive layer.

Abstract: A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.

Abstract: A vehicle door structure provided with a first door panel, a second door panel, a slide mechanism, and a hinge mechanism. The slide mechanism is provided with a first slide rail, a second slide rail, a first guide body, and a second guide body. The first slide rail is provided to the vehicle body to extend along the upper part or the lower part of the first door panel that is in a fully closed position. The first guide body is provided to the first door panel and is guided by the first slide rail. The second slide rail is provided to the second door panel. The second guide body is provided to the first door panel and is guided by the second slide rail. When the first door panel is in a fully open position, the first guide body has been or can be separated from the first slide rail.

Abstract: A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.

Abstract: In a three-axis magnetic sensor, a plurality of magnetoresistive effect element bars are connected in series by means of bias magnets formed on a flat surface parallel to the flat surface of the substrate to constitute magnetoresistive effect elements. The sensitivity direction of magnetization is a direction perpendicular to the longitudinal direction of each of the magnetoresistive effect element bars. Magnetoresistive effect elements forming X-axis and Y-axis sensors have magnetization directions that are orthogonal to each other. Magnetoresistive effect elements of the Z-axis sensor are formed on a tilted surface substrate in such a way that the magnetization direction is inside the tilted surface. The sensitivity direction of the Z-axis sensor is perpendicular to the longitudinal direction of the magnetoresistive effect element bar.

Abstract: A vehicle door structure provided with a first door panel, a second door panel, a slide mechanism, and a hinge mechanism. The slide mechanism is provided with a first slide rail, a second slide rail, a first guide body, and a second guide body. The first slide rail is provided to the vehicle body to extend along the upper part or the lower part of the first door panel that is in a fully closed position. The first guide body is provided to the first door panel and is guided by the first slide rail. The second slide rail is provided to the second door panel. The second guide body is provided to the first door panel and is guided by the second slide rail. When the first door panel is in a fully open position, the first guide body has been or can be separated from the first slide rail.

Abstract: There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle.

Abstract: A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon substrate. In order to reduce height differences between ICs and scribing lines, a planar insulating layer is formed to cover the overall surface with respect to ICs, seal rings, and scribing lines. In order to avoid occurrence of breaks and failures in ICs, openings are formed to partially etch insulating layers in a step-like manner so that walls thereof are each slanted by prescribed angles ranging from 20° to 80°. For example, a first opening is formed with respect to a thin-film element section, and a second opening is formed with respect to an external-terminal connection pad.

Abstract: Disclosed is a method of molding a resin coated bearing. When a molten resin is injected toward a substantially central portion of a disk space of forming dies from a sprue formed on an upper die, the molten resin is filled into a cavity through a film gate after the molten resin is led to the disk space from a pin gate, so that any weld is absent on a resin member, which covers an outer race, thus enabling uniformizing a coating member in resin strength and suppressing generation of crack on the coating member even at the time of high loading. Also, since the film gate formed on a whole peripheral edge of the disk space is formed from a lower die and an upper die, there is an advantage that after working suffices to take out a resin coated bearing from the both dies and to cut a runner in the disk space.

Abstract: A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon substrate. In order to reduce height differences between ICs and scribing lines, a planar insulating layer is formed to cover the overall surface with respect to ICs, seal rings, and scribing lines. In order to avoid occurrence of breaks and failures in ICs, openings are formed to partially etch insulating layers in a step-like manner so that walls thereof are each slanted by prescribed angles ranging from 20° to 80°. For example, a first opening is formed with respect to a thin-film element section, and a second opening is formed with respect to an external-terminal connection pad.

Abstract: A small-size magnetic sensor comprises three axial sensors each configured using plural giant magnetoresistive elements, wherein an X-axis sensor and a Y-axis sensor are arranged on the planar surface of an embedded layer of a substrate, and giant magnetoresistive elements forming a Z-axis sensor are formed on slopes of projections, which are formed by etching the embedded layer. It is possible to form an elongated projection on a substrate by way of the high-density plasma CVD method or by way of plasma etching and microwave etching, so that giant magnetoresistive elements are formed on the slopes of the elongated projection.

Abstract: A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon substrate. In order to reduce height differences between ICs and scribing lines, a planar insulating layer is formed to cover the overall surface with respect to ICs, seal rings, and scribing lines. In order to avoid occurrence of breaks and failures in ICs, openings are formed to partially etch insulating layers in a step-like manner so that walls thereof are each slanted by prescribed angles ranging from 20° to 80°. For example, a first opening is formed with respect to a thin-film element section, and a second opening is formed with respect to an external-terminal connection pad.

Abstract: A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon substrate. In order to reduce height differences between ICs and scribing lines, a planar insulating layer is formed to cover the overall surface with respect to ICs, seal rings, and scribing lines. In order to avoid occurrence of breaks and failures in ICs, openings are formed to partially etch insulating layers in a step-like manner so that walls thereof are each slanted by prescribed angles ranging from 20° to 80°. For example, a first opening is formed with respect to a thin-film element section, and a second opening is formed with respect to an external-terminal connection pad.

Abstract: In the three-axis magnetic sensor of the present invention, a plurality of magnetoresistive effect element bars are connected in series by means of bias magnets to constitute magnetoresistive effect elements, and magnetoresistive effect elements of the X-axis sensor and those of the Y-axis sensor are formed on a flat surface parallel to the flat surface of the substrate. The sensitivity direction of magnetization is a direction vertical to the longitudinal direction of each of the magnetoresistive effect element bars, and magnetoresistive effect elements of the X-axis sensor and those of the Y-axis sensor are formed in such a way that the magnetization directions are orthogonal to each other. Further, magnetoresistive effect elements of the Z-axis sensor are formed on a tilted surface of the projection projected from the flat surface of the substrate in such a way that the magnetization direction is inside the tilted surface.

Abstract: A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.

Abstract: There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle.

Abstract: In order to provide a guide roller which can be readily mounted on a support member and readily adjusted in position without reducing strength of a support shaft, according to the invention, when inserting a screw part of the shaft through a long hole of the support member and fixing the shaft by a nut on a back side, the screw part is inserted while contacting notched planes with contact parts, and an insertion position of the screw part is made adjustable in the long hole. It is possible, without necessity to form an engaging part for calking in the columnar shaped support shaft, to prevent reduction in strength of the guide roller, to position the guide roller with respect to a rail only by screwing the guide roller to the support member after previously fixing the support member to the slide door, and to make the operation efficient.

Abstract: A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.

Abstract: A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.