Abstract: According to one embodiment, a semiconductor memory device includes a substrate, a first insulating film, a stacked body, and a first pillar. At least a portion of an upper layer portion of the substrate is conductive. The first insulating film is provided in a portion of the substrate. The stacked body includes conductive films and insulating films stacked alternately in a first direction. The conductive films and the insulating films are provided on the substrate and on the first insulating film. The first pillar pierces the stacked body in the first direction. The first pillar includes a first lower end portion and a first extension portion. The first lower end portion is disposed inside the first insulating film. The first extension portion is disposed inside the stacked body.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, a first insulating film, a stacked body, and a first pillar. At least a portion of an upper layer portion of the substrate is conductive. The first insulating film is provided in a portion of the substrate. The stacked body includes conductive films and insulating films stacked alternately in a first direction. The conductive films and the insulating films are provided on the substrate and on the first insulating film. The first pillar pierces the stacked body in the first direction. The first pillar includes a first lower end portion and a first extension portion. The first lower end portion is disposed inside the first insulating film. The first extension portion is disposed inside the stacked body.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate and including a plurality of electrode layers; a semiconductor film; a charge storage film; an interconnect layer provided in the stacked body, the interconnect layer; a first contact portion; a first metal layer; and a second metal layer. The interconnect layer includes: a first portion including silicon; and a second portion provided on the first portion and including metal. The first metal layer is provided on the first contact portion. The second metal layer is provided on the first metal layer, and electrically connected to the interconnect layer.