Patents by Inventor Hiroshi Nakatsuji
Hiroshi Nakatsuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8829526Abstract: Disclosed is a semiconductor device in which a thin film transistor and a thin film diode are provided on one same substrate, and the characteristics respectively required for the thin film transistor and the thin film diode are achieved. Specifically disclosed is a semiconductor device that includes an insulating layer (104) formed on the surface of a substrate (101), and a thin film transistor and a thin film diode that are formed on the insulating layer (104). A portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (109) for the thin film diode, is provided with a first recessed and projected pattern (105). Meanwhile, a portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (108) for the thin film transistor, is not provided with the first recessed and projected pattern (105).Type: GrantFiled: January 18, 2010Date of Patent: September 9, 2014Assignee: Sharp Kabushiki KaishaInventor: Hiroshi Nakatsuji
-
Patent number: 8686480Abstract: Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate 30, a base layer 31 having a recess 33b on the surface is formed, and on the base layer 31, an amorphous silicon thin film 42 is formed. The amorphous silicon thin film 42 is melted to form a crystalline silicon thin film 43, while moving the molten silicon into the recess 33b. Of the silicon thin film 43, a silicon film 11 that constitutes a portion of a thin film transistor 10 is formed of the silicon thin film 43 in a part other than the recess 33b, while a silicon film 21 that constitutes a portion of a photodiode 20 is formed of the silicon thin film 43 in the recess 33b.Type: GrantFiled: April 6, 2011Date of Patent: April 1, 2014Assignee: Sharp Kabushiki KaishaInventors: Tsuyoshi Itoh, Hiroshi Nakatsuji, Masahiro Fujiwara
-
Patent number: 8460954Abstract: A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.Type: GrantFiled: October 22, 2009Date of Patent: June 11, 2013Assignee: Sharp Kabushiki KaishaInventors: Masaki Yamanaka, Hiroshi Nakatsuji, Naoki Makita
-
Publication number: 20130099290Abstract: Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate 30, a base layer 31 having a recess 33b on the surface is formed, and on the base layer 31, an amorphous silicon thin film 42 is formed. The amorphous silicon thin film 42 is melted to form a crystalline silicon thin film 43, while moving the molten silicon into the recess 33b. Of the silicon thin film 43, a silicon film 11 that constitutes a portion of a thin film transistor 10 is formed of the silicon thin film 43 in a part other than the recess 33b, while a silicon film 21 that constitutes a portion of a photodiode 20 is formed of the silicon thin film 43 in the recess 33b.Type: ApplicationFiled: April 6, 2011Publication date: April 25, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Tsuyoshi Itoh, Hiroshi Nakatsuji, Masahiro Fujiwara
-
Patent number: 8415678Abstract: A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer (113) of the thin film transistor and a semiconductor layer (114) of the thin film diode are both crystalline semiconductor layers. The semiconductor layer (113) of the thin film transistor and the semiconductor layer (114) of the thin film diode respectively include portions formed by crystallizing the same amorphous semiconductor film. The thickness of the semiconductor layer (114) of the thin film diode is greater than the thickness of the semiconductor layer (113) of the thin film transistor. The difference between the thickness of the semiconductor layer (113) of the thin film transistor and the thickness of the semiconductor layer (114) of the thin film diode is greater than 25 nm.Type: GrantFiled: May 20, 2010Date of Patent: April 9, 2013Assignee: Sharp Kabushiki KaishaInventors: Masaki Yamanaka, Hiroshi Nakatsuji, Naoki Makita
-
Publication number: 20130078787Abstract: Disclosed is a method for manufacturing a semiconductor device, including the steps of: forming a first semiconductor film (2) and a second semiconductor film (4) over a glass substrate (6); forming a photosensitive resin over the glass substrate (6) to cover the first semiconductor film (2) and the second semiconductor film (4); conducting an exposure process in which controlled amounts of exposure radiation are projected to the photosensitive resin using a photomask; conducting a developing process on the photosensitive resin that was subjected to the exposure process, to form a first resist (40) over the first semiconductor film (2) and to form a second resist (41) over the second semiconductor film (4); implanting an n-type impurity into the first semiconductor film (2) using the first resist (40) and the second resist (41) as masks; and removing the first resist (40) and implanting a p-type impurity into the first semiconductor film (2) using the second resist (41) as a mask.Type: ApplicationFiled: May 16, 2011Publication date: March 28, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Hiroshi Nakatsuji, Kazushige Hotta, Naoki Makita
-
Publication number: 20120068182Abstract: A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer (113) of the thin film transistor and a semiconductor layer (114) of the thin film diode are both crystalline semiconductor layers. The semiconductor layer (113) of the thin film transistor and the semiconductor layer (114) of the thin film diode respectively include portions formed by crystallizing the same amorphous semiconductor film. The thickness of the semiconductor layer (114) of the thin film diode is greater than the thickness of the semiconductor layer (113) of the thin film transistor. The difference between the thickness of the semiconductor layer (113) of the thin film transistor and the thickness of the semiconductor layer (114) of the thin film diode is greater than 25 nm.Type: ApplicationFiled: May 20, 2010Publication date: March 22, 2012Applicant: SHARP KABUSHIKI KAISHAInventors: Masaki Yamanaka, Hiroshi Nakatsuji, Naoki Makita
-
Publication number: 20110273390Abstract: Disclosed is a semiconductor device in which a thin film transistor and a thin film diode are provided on one same substrate, and the characteristics respectively required for the thin film transistor and the thin film diode are achieved. Specifically disclosed is a semiconductor device that includes an insulating layer (104) formed on the surface of a substrate (101), and a thin film transistor and a thin film diode that are formed on the insulating layer (104). A portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (109) for the thin film diode, is provided with a first recessed and projected pattern (105). Meanwhile, a portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (108) for the thin film transistor, is not provided with the first recessed and projected pattern (105).Type: ApplicationFiled: January 18, 2010Publication date: November 10, 2011Applicant: SHARP KABUSHIKI KAISHAInventor: Hiroshi Nakatsuji
-
Publication number: 20110261019Abstract: A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.Type: ApplicationFiled: October 20, 2009Publication date: October 27, 2011Inventors: Naoki Makita, Hiroshi Nakatsuji
-
Publication number: 20110198608Abstract: A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.Type: ApplicationFiled: October 22, 2009Publication date: August 18, 2011Applicant: SHARP KABUSHIKI KAISHAInventors: Masaki Yamanaka, Hiroshi Nakatsuji, Naoki Makita
-
Patent number: 5043371Abstract: A resin composition comprises a polybutylene terephthalate, a halogenated bisimide having the formula (1) and a polytetrafluoroethylene resin and is improved in flame retardancy and at the same time moulding properties. It is useful for parts of electric instruments.Type: GrantFiled: February 14, 1989Date of Patent: August 27, 1991Assignee: Polyplastics Co., Ltd.Inventors: Michio Nakano, Hirouki Amono, Hiroshi Nakatsuji
-
Patent number: 4859741Abstract: A polyester composition is disclosed which includes a polyester, (a) a thermoplastic elastomer and (b) a carbodiimide compound having at least one carbodiimide group and which exhibits improved impact resistance at low temperatures and stability to heat, hot water and steam. The composition is useful to form parts which are exposed to low temperatures. A polyalkylene terephthalate resin composition is also disclosed which includes a polyalkylene terephthalate resin, (a) at least one selected from the group consisting of ethylene/alkyl acrylate and a thermoplastic polyester elastomer and (b) at least one selected from the group consisting of an epoxy resin containing at least two carbodiimide groups in the molecule.Type: GrantFiled: March 16, 1987Date of Patent: August 22, 1989Assignee: Polyplastics Co., Ltd.Inventors: Katsuhiko Takahashi, Tsuneyasu Nakashima, Hiroshi Nakatsuji, Hiroshi Okuda
-
Patent number: 4622385Abstract: After crude polyacetal polymers mainly comprising bonded oxymethylene groups in the main chain thereof were once molten, they are heated at temperatures of 80.degree. C. or above in liquid mediums, in which said crude polyacetal polymers are insoluble, with keeping a heterogeneous system after they were once molten.Type: GrantFiled: September 11, 1984Date of Patent: November 11, 1986Assignee: Polyplastics Company, Ltd.Inventors: Takeshi Asano, Tsuneyoshi Okada, Hiroshi Nakatsuji
-
Patent number: 4540773Abstract: A crude polyacetal polymer obtained by polymerization or copolymerization and having as a principal component thereof connected oxymethylene radicals in a main chain is treated in a non-soluble liquid medium at temperatures higher than 80.degree. C. but lower than the melting point of the polymer and at heterogeneous equilibrium, moving the crude polymer and the non-soluble medium in opposite directions relative to each other.Type: GrantFiled: September 11, 1984Date of Patent: September 10, 1985Assignee: Polyplastics Company, Ltd.Inventors: Hiroyasu Komazawa, Hiroshi Hotta, Hiroshi Nakatsuji, Kiyoshi Yoko, Seiichi Higashiyama, Tuneyasu Nakashima, Noboru Gotoh