Abstract: A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Abstract: A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Abstract: Provided is a method capable of manufacturing a metal carbonitride film or a metalloid carbonitride film at low temperature. A metal carbonitride film or a metalloid carbonitride film is formed using as a nitrogen source at least one of an N-trialkylsilyl-1,2,3-triazole compound and a 1,2,4-triazole compound represented by the following general formula (1): where Rs are the same or different, each represent a hydrogen atom, a linear, branched or cyclic alkyl group of 1 to 5 carbon atoms or a trialkylsilyl group of 1 to 5 carbon atoms, and, depending on circumstances, bond to each other to form a ring.

Abstract: Provided is a method and apparatus that can form a metal carbonitride film or a metalloid carbonitride film at low temperature. A metal carbonitride film or a metalloid carbonitride film is formed by supplying onto a film formation object a nitrogen source and a metal source or a metalloid source, the nitrogen source containing a guanidine compound represented by the following general formula (1): where a plurality of Rs are the same or different, each represent a hydrogen atom, a linear, branched or cyclic alkyl group of 1 to 5 carbon atoms or a trialkylsilyl group of 1 to 9 carbon atoms, and, depending on circumstances, bond to each other to form a ring.

Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.

Abstract: The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M i

Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.

Abstract: The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M i

Abstract: An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Abstract: An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

Abstract: An internal combustion engine comprising a spark plug arranged at the center of the inner wall of the cylinder head, and a fuel injector arranged on the periphery of the inner wall of the cylinder head. A depression extending from the position beneath the spark plug to the position beneath the tip portion of the fuel injector is formed on the top face of the piston, and fuel is injected toward the depression. When the engine is operating under a heavy load, the fuel moving along the axis of injection impinges upon the concaved inner wall of the depression at substantially a right angle. When the engine is operating under a light load, the injection time is retarded, and at this time, the fuel moving along the axis of injection impinges upon the concaved inner wall of the depression at an acute angle.