Abstract: A power semiconductor device includes a substrate, an element circuit pattern formed on the substrate and made of Cu covered with an electroless Ni—P plating layer, and a power semiconductor element bonded to the element circuit pattern by a solder, wherein the solder is an alloy of Sn, Sb, and Cu, and the weight percent of Cu is in the range of 0.5 to 1%, inclusive.

Abstract: A power semiconductor device according to the present invention includes a heat sink made of Cu and having a thickness of 2 to 3 mm, an insulating substrate bonded on the heat sink with interposition of a first bonding layer (under-substrate solder), and a power semiconductor element mounted on the insulating substrate. In the heat sink, a buffer slot is formed at a periphery of a region bonded to the insulating substrate.

Abstract: A power semiconductor device includes a substrate, an element circuit pattern formed on the substrate and made of Cu covered with an electroless Ni—P plating layer, and a power semiconductor element bonded to the element circuit pattern by a solder, wherein the solder is an alloy of Sn, Sb, and Cu, and the weight percent of Cu is in the range of 0.5 to 1%, inclusive.

Abstract: A semiconductor device for controlling electricity including a metal base plate and at least one insulating substrate. The insulating substrate includes an insulator plate, a back-side pattern on a back face of the insulator plate and bonded to the metal base plate, and two circuit patterns located on a front face of the insulator plate and above the back-side pattern. Each of the two circuit patterns has an “L” shape and extends along two sides of the insulator plate that are continued and perpendicular to each other. The two circuit patterns are also arranged at opposed corners of the insulator plate in a centrosymmetrical relation each other. Further, in each circuit pattern, a switching element is sandwiched between a free-wheel diode and an electrode area.

Abstract: It is an object to provide a power semiconductor device having a circuit pattern and a lower pattern made of an Al alloy for cost reduction and enabling reduction in heat resistance and improvement in resistance of a soldering layer to heat cycle. A substrate of semiconductor elements is mounted on a metal base plate made of a Cu alloy. The substrate of semiconductor elements includes an insulating substrate made of ceramics or the like. The circuit pattern and the lower pattern both made of an Al alloy are formed on an upper surface and a lower surface of the insulating substrate. The lower pattern is provided on an entire surface of the insulating substrate and joined onto the metal base plate through the soldering layer. Thicknesses of the metal base plate and the insulating substrate are respectively set to be 3.5 to 5.5 mm and 0.5 to 1 mm, for example. A thickness of the circuit pattern is set to be 0.4 to 0.6 mm and thicknesses of the lower pattern and the soldering layer are respectively set to be 0.

Abstract: A semiconductor device for controlling electricity includes: