Patents by Inventor HIROSHI NISHIKIZAWA

HIROSHI NISHIKIZAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device
    Patent number: 9583502
    Abstract: After forming a first film over the main surface of a semiconductor substrate, the first film is patterned, thereby forming a control gate electrode for a non-volatile memory, a dummy gate electrode, and a first film pattern. Subsequently, a memory gate electrode for the non-volatile memory adjacent to the control gate electrode is formed. Then, the first film pattern is patterned thereby forming a gate electrode and a dummy gate electrode.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: February 28, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Hiroshi Nishikizawa, Takuro Homma, Hiraku Chakihara, Mitsuhiro Noguchi
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20160027794
    Abstract: After forming a first film over the main surface of a semiconductor substrate, the first film is patterned, thereby forming a control gate electrode for a non-volatile memory, a dummy gate electrode, and a first film pattern. Subsequently, a memory gate electrode for the non-volatile memory adjacent to the control gate electrode is formed. Then, the first film pattern is patterned thereby forming a gate electrode and a dummy gate electrode.
    Type: Application
    Filed: October 2, 2015
    Publication date: January 28, 2016
    Inventors: Hiroshi Nishikizawa, Takuro Homma, Hiraku Chakihara, Mitsuhiro Noguchi
  • Method of manufacturing a semiconductor device
    Patent number: 9171727
    Abstract: After forming a first film over the main surface of a semiconductor substrate, the first film is patterned, thereby forming a control gate electrode for a non-volatile memory, a dummy gate electrode, and a first film pattern. Subsequently, a memory gate electrode for the non-volatile memory adjacent to the control gate electrode is formed. Then, the first film pattern is patterned thereby forming a gate electrode and a dummy gate electrode.
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: October 27, 2015
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Hiroshi Nishikizawa, Takuro Homma, Hiraku Chakihara, Mitsuhiro Noguchi
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20140242767
    Abstract: After forming a first film over the main surface of a semiconductor substrate, the first film is patterned, thereby forming a control gate electrode for a non-volatile memory, a dummy gate electrode, and a first film pattern. Subsequently, a memory gate electrode for the non-volatile memory adjacent to the control gate electrode is formed. Then, the first film pattern is patterned thereby forming a gate electrode and a dummy gate electrode.
    Type: Application
    Filed: January 2, 2014
    Publication date: August 28, 2014
    Applicant: Renesas Electronics Corporation
    Inventors: HIROSHI NISHIKIZAWA, TAKURO HOMMA, HIRAKU CHAKIHARA, MITSUHIRO NOGUCHI