Abstract: The present invention provides a gas control system which introduces carrier gas into a tank containing a material and leads out material gas generated by vaporization of the material from the tank together with the carrier gas, the gas control system being provided with: a flow rate control unit that is configure to control the flow rate of the material gas led out from the tank by adjusting the flow rate of the carrier gas introduced into the tank; and a control limit detection unit that is configured to detect a control limit state and output detection of the control limit state, the control limit state is a state that the adjustment of the flow rate of the carrier gas performed by the flow rate control unit cannot secure the flow rate control of the material gas at a predetermined performance level.

Abstract: In order to provide a fluid control device capable of making the control accuracy of the flow rate or pressure of fluid passing through a valve during each ON interval of pulse control higher than before, the control mechanism includes: a pulse signal generator adapted to input a pulse signal having a predetermined pulse height and a predetermined pulse width to the first valve; a feedback value calculator adapted to, on the basis of a pressure value measured by a pressure sensor, as a feedback value, calculate the time integrated value of a pressure drop occurring in an internal volume during an ON interval when the first valve is opened; and a signal compensator adapted to, on the basis of the deviation between the feedback value and a reference value, compensate the pulse signal to be inputted from the pulse signal generator to the first valve.

Abstract: Obtained is an absorbance meter capable of, when measuring high-temperature sample gas, without increasing the distance from a light source part to a light receiving part, protecting the light source part and the light receiving part from the heat of the sample gas and keeping measurement accuracy high. A sample accommodation part including an accommodation space for accommodating the sample gas, the light source part for radiating light into the accommodation space, the light receiving part for receiving light exiting from inside the accommodation space, a first insulation part disposed adjacent to the light source part side of the sample accommodation part, a second insulation part disposed adjacent to the light receiving part side of the sample accommodation part, a first cooling part disposed adjacent to the first insulation part, and a second cooling part disposed adjacent to the second insulation part are provided.

Abstract: The present invention provides a gas control system which introduces carrier gas into a tank containing a material and leads out material gas generated by vaporization of the material from the tank together with the carrier gas, the gas control system being provided with: a flow rate control unit that is configure to control the flow rate of the material gas led out from the tank by adjusting the flow rate of the carrier gas introduced into the tank; and a control limit detection unit that is configured to detect a control limit state and output detection of the control limit state, the control limit state is a state that the adjustment of the flow rate of the carrier gas performed by the flow rate control unit cannot secure the flow rate control of the material gas at a predetermined performance level.

Abstract: In order to provide a fluid control device capable of making the control accuracy of the flow rate or pressure of fluid passing through a valve during each ON interval of pulse control higher than before, the control mechanism includes: a pulse signal generator adapted to input a pulse signal having a predetermined pulse height and a predetermined pulse width to the first valve; a feedback value calculator adapted to, on the basis of a pressure value measured by a pressure sensor, as a feedback value, calculate the time integrated value of a pressure drop occurring in an internal volume during an ON interval when the first valve is opened; and a signal compensator adapted to, on the basis of the deviation between the feedback value and a reference value, compensate the pulse signal to be inputted from the pulse signal generator to the first valve.

Abstract: A gas control system includes: a first valve that is provided in a carrier gas line or in a gas supply line; a flow rate control mechanism that is provided in a diluent gas line and includes a flow rate sensor and a second valve; a contactless type first concentration sensor; a first valve control part; a diluent gas setting flow rate calculation part adapted to, on the basis of a preset setting total flow rate of a post-dilution mixed gas and a post-dilution measured concentration, calculate a diluent gas setting flow rate that is a flow rate of a diluent gas to be flowed through the diluent gas line; and a second valve control part adapted to control the opening level of the second valve so as to decrease the deviation between the diluent gas setting flow rate and a measured flow rate measured by the flow rate sensor.

Abstract: A gas control system includes: a first valve that is provided in a carrier gas line or in a gas supply line; a flow rate control mechanism that is provided in a diluent gas line and includes a flow rate sensor and a second valve; a contactless type first concentration sensor; a first valve control part; a diluent gas setting flow rate calculation part adapted to, on the basis of a preset setting total flow rate of a post-dilution mixed gas and a post-dilution measured concentration, calculate a diluent gas setting flow rate that is a flow rate of a diluent gas to be flowed through the diluent gas line; and a second valve control part adapted to control the opening level of the second valve so as to decrease the deviation between the diluent gas setting flow rate and a measured flow rate measured by the flow rate sensor.

Abstract: A method of gasifying a liquid material that is entrained with a carrier gas includes mixing liquid material with a carrier gas in a control valve that can be heated. The gas-liquid mixture is maintain at a first pressure level that is sufficiently higher than the pressure level downstream of a nozzle in the valve to thereby provide a total gasification of the gas-liquid mixture. The control valve can position the liquid in a reservoir radially outward from a valve seat and an elongated mixing chamber can be positioned within the valve seat and connected to both a carrier gas and the release nozzle.

Abstract: A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources wherein the liquid precursor source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber. A second liquid precursor source, having a vapor pressure lower than the first liquid precursor source, is then introduced in vaporized form into the manifold at a point closer to the processing chamber. This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold at a point closer to the processing chamber than the previous liquid precursor source.

Abstract: The flow of a liquid reagent gas into a vapor deposition process chamber is adjusted in response to control information provided by a process controller. The controller executes a prescribed mathematical algorithm which utilizes first and second steady-state pressure differentials. The first pressure differential is measured during the flowing of a carrier gas into the chamber. The second pressure differential is measured after the release of the liquid reagent into the chamber.

Abstract: A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources wherein the liquid precursor source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber. A second liquid precursor source, having a vapor pressure lower than the first liquid precursor source, is then introduced in vaporized form into the manifold at a point closer to the processing chamber. This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold at a point closer to the processing chamber than the previous liquid precursor source.

Abstract: The flow of a liquid reagent gas into a vapor deposition process chamber is adjusted in response to control information provided by a process controller. The controller executes a prescribed mathematical algorithm which utilizes first and second steady-state pressure differentials. The first pressure differential is measured during the flowing of a carrier gas into the chamber. The second pressure differential is measured after the release of the liquid reagent into the chamber.

Abstract: A liquid vaporizer-feeder has a unitary housing structure for both a control valve for controlling the amount of a liquid passing therethrough and a vaporization valve for causing the liquid from the control valve to be vaporized and transported out by a carrier gas. The housing structure has a throughhole through which the two valves are connected. The throughhole is short and narrow, and has a portion made even narrower such that the pressure in the liquid passing therethrough is increased, preventing bubbles from forming in the throughhole. As a result, vaporized liquid can be supplied at a steadier rate, for example, to a reaction chamber.

Abstract: Fixed amounts of a liquid source for a chemical vapor deposition process is supplied continuously from a source tank and through a liquid mass flow controller to a three-way valve. Inside the three-way valve, the liquid source is evaporated to generate a source gas by contacting a high-temperature carrier gas which flows therethrough and becomes mixed with the source gas. The gas mixture thus generated is supplied into a process chamber for a chemical vapor deposition process. The carrier gas may be heated by a gas heater before entering the three-way valve. Alternatively, the three-way valve may be enclosed inside a thermostatic container, the carrier gas being heated inside the container.

Abstract: A liquid vaporizer-feeder has a unitary housing structure for both a control valve for controlling the amount of a liquid passing therethrough and a vaporization valve for causing the liquid from the control valve to be vaporized and transported out by a carrier gas. The housing structure has a throughhole through which the two valves are connected. The throughhole is short and narrow, and has a portion made even narrower such that the pressure in the liquid passing therethrough is increased, preventing bubbles from forming in the throughhole. As a result, vaporized liquid can be supplied at a steadier rate, for example, to a reaction chamber.

Abstract: An apparatus for producing a thin film of tantalum oxide comprising a vacuum chamber with a heater, an ampule of an organic tantalum compound, a container of a carrier gas, a container of an oxygen-containing gas, and a three way valve having a liquid inlet, a gas inlet and an outlet, the liquid inlet being connected with the ampule via a liquid flow controller, the gas inlet being connected with the containers of gas, the outlet being connected with the vacuum chamber, whereby the tantalum compound vaporized at the three way valve can obtain constant supply by the flow controller regardless of the ambient temperature, resulting in the tantalum oxide film of uniform quality.

Abstract: A surface-acoustic-wave device includes a glassy layer provided on a piezoelectric layer and having periodic grooves (gratings) so as to be used as a reflector exhibiting an excellent reflection ratio.