Abstract: A wafer having chamfered bent portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer such as an orientation flatness. The chipping of the wafer can be prevented, and in coating the wafer with a photoresist, forming an epitaxially grown layer on the wafer, etc., films having desired characteristics can be provided on the surface of the wafer.

Abstract: A wafer having chamfered bent portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer such as an orientation flatness. The chipping of the wafer can be prevented, and in coating the wafer with a photoresist, forming an epitaxially grown layer on the wafer, etc., films having desired characteristics can be provided on the surface of the wafer.

Abstract: The invention deals with an exposure apparatus which detects environmental conditions such as atmospheric pressure, temperature and humidity in which the exposure apparatus is placed, and which maintains the projected magnification constant at all times based upon the detected values, so that the pattern can be reproduced precisely. Concretely, the apparatus comprises a detector to detect at least one of the tube temperature of the optical projecting system, humidity or atmospheric pressure near the optical system, and a control unit which controls optical characteristics based upon the signals detected by the detector. Namely, the control unit adjusts the optical characteristics depending upon the environmental conditions thereby to adjust variation in the projecting magnification and/or variation in the focal position. Thus, variation in the optical characteristics is adjusted to transfer the pattern maintaining high precision.

Abstract: The invention deals with an exposure apparatus which detects environmental conditions such as atmospheric pressure, temperature and humidity in which the exposure apparatus is placed, and which maintains the projected magnification constant at all times based upon the detected values, so that the pattern can be reproduced precisely. Concretely, the apparatus comprises a detector to detect at least one of the tube temperature of the optical projecting system, humidity or atmospheric pressure near the optical system, and a control unit which controls optical characteristics based upon the signals detected by the detector. Namely, the control unit adjusts the optical characteristics depending upon the environmental conditions thereby to adjust variation in the projecting magnification and/or variation in the focal position. Thus, variation in the optical characteristics is adjusted to transfer the pattern maintaining high precision.

Abstract: A wafer having chamfered bent portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer such as an orientation flatness. The chipping of the wafer can be prevented, and in coating the wafer with a photoresist, forming an epitaxially grown layer on the wafer, etc., films having desired characteristics can be provided on the surface of the wafer.

Abstract: A projection aligner wherein light from a light source is passed through a mask so as to focus an image of a pattern of the mask on a wafer, characterized in that at least one sensor for monitoring a luminosity and a distribution thereof is disposed in an optical path between the light source and the mask, whereby a luminosity and a distribution thereof on the wafer can be controlled to proper values. The projection aligner is effective for application to minute processing technologies for the production of semiconductor devices, etc.

Abstract: A projection aligner wherein light from a light source is passed through a mask so as to focus an image of a pattern of the mask on a wafer, characterized in that at least one sensor for monitoring a luminosity and a distribution thereof is disposed in an optical path between the light source and the mask, whereby a luminosity and a distribution thereof on the wafer can be controlled to proper values. The projection aligner is effective for application to minute processing technologies for the production of semiconductor devices, etc.

Abstract: The invention deals with an exposure apparatus which detects environmental conditions such as atmospheric pressure, temperature and humidity in which the exposure apparatus is placed, and which maintains the projected magnification constant at all times based upon the detected values, so that the pattern can be reproduced precisely. Concretely, the apparatus comprises a detector to detect at least one of the tube temperature of the optical projecting system, humidity or atmospheric pressure near the optical system, and a control unit which controls optical characteristics based upon the signals detected by the detector. Namely, the control unit adjusts the optical characteristics depending upon the environmental conditions thereby to adjust variation in the projecting magnification and/or variation in the focal position. Thus, variation in the optical characteristics is adjusted to transfer the pattern maintaining high precision.

Abstract: A projection aligner wherein light from a light source is passed through a mask so as to focus an image of a pattern of the mask on a wafer, characterized in that at least one sensor for monitoring a luminosity and a distribution thereof is disposed in an optical path between the light source and the mask, whereby a luminosity and a distribution thereof on the wafer can be controlled to proper values. The projection aligner is effective for application to minute processing technologies for the production of semiconductor devices, etc.

Abstract: A wafer projection aligner comprises an optical system for projecting a radiation pattern onto a surface of a semiconductor wafer and a wafer position setting apparatus for positioning the wafer at a position within a focal depth of the optical system for allowing printing of a fine pattern on the wafer.

Abstract: A method of making a mask and a wafer intimately contact each other by means of such a mask aligning apparatus comprising a base having a chamber, a piston apparatus movable up and down in the chamber, a wafer chuck provided at one end of the piston apparatus and adapted to fix the wafer, means for fixing the mask to the upper surface of the wafer in a superposed relationship, drive means adapted to impart a driving force to the piston, so as to move the wafer toward the mask, and means for biasing the piston apparatus in the direction to move the wafer away from the mask.

Abstract: A wafer having chamfered bent portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer such as an orientation flatness. The chipping of the wafer can be prevented, and in coating the wafer with a photoresist, forming an epiaxially grown layer on the wafer, etc., films having desired characteristics can be provided on the surface of the wafer.