Patents by Inventor Hiroshi Ohkawa
Hiroshi Ohkawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145788Abstract: An object is to provide a plate-like partitioning wall allowing permeation of sodium ions therethrough and having high safety and durability. A plate-like partitioning wall 2 of the present invention is formed from a solid electrolyte allowing permeation of sodium ions therethrough. The plate-like partitioning wall 2 has a plate-like shape having, in a center part in the thickness direction thereof, a negative electrode chamber 20 to which molten sodium is supplied. This negative electrode chamber 20 is formed as a foil-like space extending in two-dimensional directions or as a pore-like space extending in two-dimensional directions in a net-like shape. The negative electrode chamber 20 of this plate-like partitioning wall 2 is formed as a thin foil-like space or as a fine pore-like space, and thus, the amount of molten sodium stored therein is very small.Type: ApplicationFiled: February 28, 2022Publication date: May 2, 2024Applicant: KABUSHIKI KAISHA JINKOSHIGEN KENKYUSHOInventor: Hiroshi OHKAWA
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Publication number: 20240069941Abstract: An information processing apparatus includes a logic circuit provided with a processing function performing a microservice, a service mesh functional circuit and a pseudo application. The logic circuit starts processing of a service that uses the request data, generates a pseudo request for a control plane communication, transmits the generated pseudo request to the pseudo application, and transmits a processing completion notification to the pseudo application based on completion of the processing of the service by the processing function. The pseudo application transmits a pseudo response to the logic circuit based on reception of the processing completion notification after reception of the pseudo request. The service mesh functional circuit rewrites destination information included in the pseudo response and transfers the pseudo response in which the destination information has been rewritten to the logic circuit.Type: ApplicationFiled: May 24, 2023Publication date: February 29, 2024Applicant: Fujitsu LimitedInventors: Naoyoshi OHKAWA, Hiroshi TOMONAGA
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Publication number: 20210351442Abstract: A molten sodium battery includes molten sodium making an anode active material, a cathode active material, a sodium container accommodating the molten sodium therein, a partition wall including an anode chamber in an interior thereof, and a cathode container air-tightly accommodating the cathode active material and the partition wall therein. The molten sodium battery further includes the cathode container including a joint having an Opening communicating an inside of the cathode container with an outside thereof, and the partition wall containing a partition-wall body within the cathode container having a plate shape which contains the anode chamber at around central site thereof in a thickness direction, and a through bore connecting the anode chamber with an outside of the anode chamber, and a head fitted into the opening in the joint and bonded integrally with the partition-wall body which is communicated with the anode chamber by the through bore.Type: ApplicationFiled: July 21, 2021Publication date: November 11, 2021Applicant: YUGENKAISHA CHUSEIGIKENInventor: Hiroshi OHKAWA
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Patent number: 10637103Abstract: A sodium-sulfur battery includes a partition wall formed of a solid electrolyte, a cathode chamber formed on one of opposite sides of the partition wall, an anode chamber formed on another one of the opposite sides of the partition wall, sulfur accommodated in the cathode chamber, sodium some of which is accommodated in the anode chamber, a sodium container accommodating most of remaining sodium, and a communication passage communicating the anode chamber with the sodium container, and including a finely-perforated portion extending into the sodium container and opening inside the sodium container. Moreover, the communication passage further includes a shutoff portion for closing the communication passage itself.Type: GrantFiled: October 3, 2016Date of Patent: April 28, 2020Assignee: YUGENKAISHA CHUSEIGIKENInventor: Hiroshi Ohkawa
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Publication number: 20180375163Abstract: A partition wall includes: a partition-wall body arranged within a metallic cathode container, which includes a cylinder-shaped cap communicating the inside with the outside, having a plate shape, which includes: an anode chamber at around the central site in the thickness direction; and a through bore, and made of beta-alumina; and a nipple-shaped head formed integrally with the partition-wall body, including a passage bore which is communicated with the anode chamber by way of the through bore, and attached air-tightly to the cap, and made of a ceramic material.Type: ApplicationFiled: November 23, 2016Publication date: December 27, 2018Applicant: YUGENKAISHA CHUSEIGIKENInventor: Hiroshi OHKAWA
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Publication number: 20180287216Abstract: A sodium-sulfur battery includes a partition wall formed of a solid electrolyte, a cathode chamber formed on one of opposite sides of the partition wall, an anode chamber formed on another one of the opposite sides of the partition wall, sulfur accommodated in the cathode chamber, sodium some of which is accommodated in the anode chamber, a sodium container accommodating most of remaining sodium, and a communication passage communicating the anode chamber with the sodium container, and including a finely-perforated portion extending into the sodium container and opening inside the sodium container. Moreover, the communication passage further includes a shutoff portion for closing the communication passage itself.Type: ApplicationFiled: October 3, 2016Publication date: October 4, 2018Applicant: YUGENKAISHA CHUSEIGIKENInventor: Hiroshi OHKAWA
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Patent number: 9300012Abstract: Provided is a solid electrolyte secondary battery with a greater capacity than previous solid electrolyte secondary batteries. Furthermore, the disclosed solid electrolyte secondary battery can obtain a high power output and improve battery function while ensuring a large capacity. The solid electrolyte secondary battery is provided with a cathode chamber, a cathode active material container that is provided independently and stores some cathode active material, and a channel medium that is provided between the two and through which the active material passes. The cathode active material is transferred by the channel medium and heterogeneity, when the active material is discharged, can be curbed. By providing a transfer medium, which transfers the cathode active material, the cathode active material can be forcibly transferred.Type: GrantFiled: May 31, 2011Date of Patent: March 29, 2016Inventor: Hiroshi Ohkawa
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Patent number: 8796779Abstract: A first MIS transistor and a second MIS transistor of the same conductivity type are formed on an identical semiconductor substrate. An interface layer included in a gate insulating film of the first MIS transistor has a thickness larger than that of an interface layer included in a gate insulating film of the second MIS transistor.Type: GrantFiled: October 31, 2012Date of Patent: August 5, 2014Assignee: Panasonic CorporationInventors: Satoru Ito, Yoshiya Moriyama, Hiroshi Ohkawa, Susumu Akamatsu
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Patent number: 8779524Abstract: A semiconductor device includes a first-conductivity-type first MIS transistor and a second-conductivity-type second MIS transistor. The first and second MIS transistors include a first and a second gate insulating film formed on a first and a second active region surrounded by a separation region of a semiconductor substrate, and a first and a second gate electrode formed on the first and second gate insulating films. The first and second gate insulating films are separated from each other on a first separation region of the separation region. A distance s between first ends of the first and second active regions facing each other with the first separation region being interposed therebetween, and a protrusion amount d1 from the first end of the first active region to a first end of the first gate insulating film located on the first separation region establish a relationship d1<0.5s.Type: GrantFiled: July 20, 2012Date of Patent: July 15, 2014Assignee: Panasonic CorporationInventors: Yoshiya Moriyama, Hiromasa Fujimoto, Satoru Itou, Susumu Akamatsu, Hiroshi Ohkawa
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Publication number: 20130065102Abstract: The present invention is to provide a solid electrolyte secondary battery having a safer structure. This secondary battery has a positive storage container and a positive storage container which are separated from each other. A part of negative electrode active material and positive electrode active material are housed in different containers. Even the battery is broken. Both of the electrode active materials have not been mixed. The battery is safe.Type: ApplicationFiled: May 25, 2011Publication date: March 14, 2013Applicant: Kabushikikaisha Jinkoshigen KenkyushoInventor: Hiroshi Ohkawa
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Publication number: 20130065098Abstract: Provided is a solid electrolyte secondary battery with a greater capacity than previous solid electrolyte secondary batteries. Furthermore, the disclosed solid electrolyte secondary battery can obtain a high power output and improve battery function while ensuring a large capacity. The solid electrolyte secondary battery is provided with a cathode chamber (18), a cathode active material container (30) that is provided independently and stores some cathode active material, and a channel medium (100) that is provided between the two and through which the active material passes. The cathode active material is transferred by the channel medium and heterogeneity, when the active material is discharged, can be curbed. By providing a transfer medium (120), which transfers the cathode active material, the cathode active material can be forcibly transferred.Type: ApplicationFiled: May 31, 2011Publication date: March 14, 2013Inventor: Hiroshi Ohkawa
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Publication number: 20120280328Abstract: A semiconductor device includes a first-conductivity-type first MIS transistor and a second-conductivity-type second MIS transistor. The first and second MIS transistors include a first and a second gate insulating film formed on a first and a second active region surrounded by a separation region of a semiconductor substrate, and a first and a second gate electrode formed on the first and second gate insulating films. The first and second gate insulating films are separated from each other on a first separation region of the separation region. A distance s between first ends of the first and second active regions facing each other with the first separation region being interposed therebetween, and a protrusion amount d1 from the first end of the first active region to a first end of the first gate insulating film located on the first separation region establish a relationship d1<0.5 s.Type: ApplicationFiled: July 20, 2012Publication date: November 8, 2012Applicant: Panasonic CorporationInventors: Yoshiya MORIYAMA, Hiromasa FUJIMOTO, Satoru ITOU, Susumu AKAMATSU, Hiroshi OHKAWA
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Patent number: 7804146Abstract: A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile.Type: GrantFiled: February 8, 2008Date of Patent: September 28, 2010Assignee: Panasonic CorporationInventors: Hiroshi Ohkawa, Junji Hirase, Hisashi Ogawa, Kenji Yoneda
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Publication number: 20080258229Abstract: A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile.Type: ApplicationFiled: February 8, 2008Publication date: October 23, 2008Inventors: Hiroshi OHKAWA, Junji Hirase, Hisashi Ogawa, Kenji Yoneda
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Publication number: 20080017927Abstract: A semiconductor device includes a dual gate electrode lying across the tops of a first element region and a second element region formed apart from each other with an isolation region interposed between the first and second element regions. The dual gate electrode is composed of two silicide regions with different compositions: a first silicide region on top of the first element region and a second silicide region on top of the second element region. The interface between the first and second silicide regions includes a tilted plane.Type: ApplicationFiled: June 5, 2007Publication date: January 24, 2008Inventor: Hiroshi Ohkawa
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Patent number: 6975066Abstract: An object is to provide an organic EL element which can realize the improvement in the difference of an emission luminance due to the difference of an emission rise time in a plurality of light emitting portions. Segment portions S for determining an emission in a specific shape and wiring portions L for separately supplying electric currents to the segment portions S are formed. An area of the wiring portion L of the segment portion S is enlarged such that an emission luminance in the segment portion S falls within a range of from a minimum luminance to a luminance 30% higher than that.Type: GrantFiled: June 22, 2001Date of Patent: December 13, 2005Assignee: Nippon Seiki Co., Ltd.Inventors: Hitoshi Wakai, Jun-Ichi Maruyama, Hiroshi Ohkawa
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Publication number: 20030093292Abstract: A foreign application supporting system being characterized in that it is provided with: application information disclosing means for disclosing, after completing a first country application, an outline of the first country application at least upon receiving the provision of information regarding the first country application; and supporter recruiting means for recruiting a supporter who judges, based on the content disclosed by the application information disclosing means, to wish to support a second country application.Type: ApplicationFiled: October 21, 2002Publication date: May 15, 2003Inventor: Hiroshi Ohkawa
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Patent number: 6542853Abstract: A life estimation device which numerically measures the damage to a machine such as an engine accurately to estimate, the life of the machine accurately without requiring skill. A load map (B) of the two-dimensional distribution of the operation parameters of an engine is made. In accordance with the weighted integration time &agr;i·ki at each level (Bi) of the load map (B), the actual damage &dgr;=&Sgr;&agr;i·ki to the engine for a certain lapse of time &tgr; is calculated. By operating the engine beforehand, a correspondence relation L2 between the magnitude of the damage &dgr; and the life H is predetermined. The life H1 corresponding to the calculated actual damage &dgr;1 is determined in accordance with the predetermined correspondence relation L2 and the H1 is outputted as the estimated life of the engine.Type: GrantFiled: May 15, 2000Date of Patent: April 1, 2003Assignee: Komatsu, Ltd.Inventors: Taku Murakami, Ichio Ichikawa, Haruo Hashimoto, Koji Iijima, Fumihide Sato, Hiroshi Ohkawa
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Publication number: 20020163298Abstract: An object is to provide an organic EL element which can realize the improvement in the difference of an emission luminance due to the difference of an emission rise time in a plurality of light emitting portions. Segment portions S for determining an emission in a specific shape and wiring portions L for separately supplying electric currents to the segment portions S are formed. An area of the wiring portion L of the segment portion S is enlarged such that an emission luminance in the segment portion S falls within a range of from a minimum luminance to a luminance 30% higher than that.Type: ApplicationFiled: May 13, 2002Publication date: November 7, 2002Inventors: Hitoshi Wakai, Jun-Ichi Maruyama, Hiroshi Ohkawa
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Patent number: 5483913Abstract: The floating structure 1 includes a sheet held at a predetermined position by a column 2 which is positioned at the bottom of the water or a cable body 8 in which one end thereof is fixed to the bottom, and a levee wall which is projected from the water surface at a marginal portion. A rigid member can be fixed to the sheet for improving rigidity. Furthermore, a floating body for weakening the wave 70 can be installed at the marginal portion of the floating structure 1.Type: GrantFiled: June 8, 1994Date of Patent: January 16, 1996Inventors: Hiroshi Ohkawa, Takao Nonoyama