Patents by Inventor Hiroshi Ohkawa

Hiroshi Ohkawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145788
    Abstract: An object is to provide a plate-like partitioning wall allowing permeation of sodium ions therethrough and having high safety and durability. A plate-like partitioning wall 2 of the present invention is formed from a solid electrolyte allowing permeation of sodium ions therethrough. The plate-like partitioning wall 2 has a plate-like shape having, in a center part in the thickness direction thereof, a negative electrode chamber 20 to which molten sodium is supplied. This negative electrode chamber 20 is formed as a foil-like space extending in two-dimensional directions or as a pore-like space extending in two-dimensional directions in a net-like shape. The negative electrode chamber 20 of this plate-like partitioning wall 2 is formed as a thin foil-like space or as a fine pore-like space, and thus, the amount of molten sodium stored therein is very small.
    Type: Application
    Filed: February 28, 2022
    Publication date: May 2, 2024
    Applicant: KABUSHIKI KAISHA JINKOSHIGEN KENKYUSHO
    Inventor: Hiroshi OHKAWA
  • Publication number: 20240069941
    Abstract: An information processing apparatus includes a logic circuit provided with a processing function performing a microservice, a service mesh functional circuit and a pseudo application. The logic circuit starts processing of a service that uses the request data, generates a pseudo request for a control plane communication, transmits the generated pseudo request to the pseudo application, and transmits a processing completion notification to the pseudo application based on completion of the processing of the service by the processing function. The pseudo application transmits a pseudo response to the logic circuit based on reception of the processing completion notification after reception of the pseudo request. The service mesh functional circuit rewrites destination information included in the pseudo response and transfers the pseudo response in which the destination information has been rewritten to the logic circuit.
    Type: Application
    Filed: May 24, 2023
    Publication date: February 29, 2024
    Applicant: Fujitsu Limited
    Inventors: Naoyoshi OHKAWA, Hiroshi TOMONAGA
  • Publication number: 20210351442
    Abstract: A molten sodium battery includes molten sodium making an anode active material, a cathode active material, a sodium container accommodating the molten sodium therein, a partition wall including an anode chamber in an interior thereof, and a cathode container air-tightly accommodating the cathode active material and the partition wall therein. The molten sodium battery further includes the cathode container including a joint having an Opening communicating an inside of the cathode container with an outside thereof, and the partition wall containing a partition-wall body within the cathode container having a plate shape which contains the anode chamber at around central site thereof in a thickness direction, and a through bore connecting the anode chamber with an outside of the anode chamber, and a head fitted into the opening in the joint and bonded integrally with the partition-wall body which is communicated with the anode chamber by the through bore.
    Type: Application
    Filed: July 21, 2021
    Publication date: November 11, 2021
    Applicant: YUGENKAISHA CHUSEIGIKEN
    Inventor: Hiroshi OHKAWA
  • Patent number: 10637103
    Abstract: A sodium-sulfur battery includes a partition wall formed of a solid electrolyte, a cathode chamber formed on one of opposite sides of the partition wall, an anode chamber formed on another one of the opposite sides of the partition wall, sulfur accommodated in the cathode chamber, sodium some of which is accommodated in the anode chamber, a sodium container accommodating most of remaining sodium, and a communication passage communicating the anode chamber with the sodium container, and including a finely-perforated portion extending into the sodium container and opening inside the sodium container. Moreover, the communication passage further includes a shutoff portion for closing the communication passage itself.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: April 28, 2020
    Assignee: YUGENKAISHA CHUSEIGIKEN
    Inventor: Hiroshi Ohkawa
  • Publication number: 20180375163
    Abstract: A partition wall includes: a partition-wall body arranged within a metallic cathode container, which includes a cylinder-shaped cap communicating the inside with the outside, having a plate shape, which includes: an anode chamber at around the central site in the thickness direction; and a through bore, and made of beta-alumina; and a nipple-shaped head formed integrally with the partition-wall body, including a passage bore which is communicated with the anode chamber by way of the through bore, and attached air-tightly to the cap, and made of a ceramic material.
    Type: Application
    Filed: November 23, 2016
    Publication date: December 27, 2018
    Applicant: YUGENKAISHA CHUSEIGIKEN
    Inventor: Hiroshi OHKAWA
  • Publication number: 20180287216
    Abstract: A sodium-sulfur battery includes a partition wall formed of a solid electrolyte, a cathode chamber formed on one of opposite sides of the partition wall, an anode chamber formed on another one of the opposite sides of the partition wall, sulfur accommodated in the cathode chamber, sodium some of which is accommodated in the anode chamber, a sodium container accommodating most of remaining sodium, and a communication passage communicating the anode chamber with the sodium container, and including a finely-perforated portion extending into the sodium container and opening inside the sodium container. Moreover, the communication passage further includes a shutoff portion for closing the communication passage itself.
    Type: Application
    Filed: October 3, 2016
    Publication date: October 4, 2018
    Applicant: YUGENKAISHA CHUSEIGIKEN
    Inventor: Hiroshi OHKAWA
  • Patent number: 9300012
    Abstract: Provided is a solid electrolyte secondary battery with a greater capacity than previous solid electrolyte secondary batteries. Furthermore, the disclosed solid electrolyte secondary battery can obtain a high power output and improve battery function while ensuring a large capacity. The solid electrolyte secondary battery is provided with a cathode chamber, a cathode active material container that is provided independently and stores some cathode active material, and a channel medium that is provided between the two and through which the active material passes. The cathode active material is transferred by the channel medium and heterogeneity, when the active material is discharged, can be curbed. By providing a transfer medium, which transfers the cathode active material, the cathode active material can be forcibly transferred.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: March 29, 2016
    Inventor: Hiroshi Ohkawa
  • Patent number: 8796779
    Abstract: A first MIS transistor and a second MIS transistor of the same conductivity type are formed on an identical semiconductor substrate. An interface layer included in a gate insulating film of the first MIS transistor has a thickness larger than that of an interface layer included in a gate insulating film of the second MIS transistor.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: August 5, 2014
    Assignee: Panasonic Corporation
    Inventors: Satoru Ito, Yoshiya Moriyama, Hiroshi Ohkawa, Susumu Akamatsu
  • Patent number: 8779524
    Abstract: A semiconductor device includes a first-conductivity-type first MIS transistor and a second-conductivity-type second MIS transistor. The first and second MIS transistors include a first and a second gate insulating film formed on a first and a second active region surrounded by a separation region of a semiconductor substrate, and a first and a second gate electrode formed on the first and second gate insulating films. The first and second gate insulating films are separated from each other on a first separation region of the separation region. A distance s between first ends of the first and second active regions facing each other with the first separation region being interposed therebetween, and a protrusion amount d1 from the first end of the first active region to a first end of the first gate insulating film located on the first separation region establish a relationship d1<0.5s.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: July 15, 2014
    Assignee: Panasonic Corporation
    Inventors: Yoshiya Moriyama, Hiromasa Fujimoto, Satoru Itou, Susumu Akamatsu, Hiroshi Ohkawa
  • Publication number: 20130065102
    Abstract: The present invention is to provide a solid electrolyte secondary battery having a safer structure. This secondary battery has a positive storage container and a positive storage container which are separated from each other. A part of negative electrode active material and positive electrode active material are housed in different containers. Even the battery is broken. Both of the electrode active materials have not been mixed. The battery is safe.
    Type: Application
    Filed: May 25, 2011
    Publication date: March 14, 2013
    Applicant: Kabushikikaisha Jinkoshigen Kenkyusho
    Inventor: Hiroshi Ohkawa
  • Publication number: 20130065098
    Abstract: Provided is a solid electrolyte secondary battery with a greater capacity than previous solid electrolyte secondary batteries. Furthermore, the disclosed solid electrolyte secondary battery can obtain a high power output and improve battery function while ensuring a large capacity. The solid electrolyte secondary battery is provided with a cathode chamber (18), a cathode active material container (30) that is provided independently and stores some cathode active material, and a channel medium (100) that is provided between the two and through which the active material passes. The cathode active material is transferred by the channel medium and heterogeneity, when the active material is discharged, can be curbed. By providing a transfer medium (120), which transfers the cathode active material, the cathode active material can be forcibly transferred.
    Type: Application
    Filed: May 31, 2011
    Publication date: March 14, 2013
    Inventor: Hiroshi Ohkawa
  • Publication number: 20120280328
    Abstract: A semiconductor device includes a first-conductivity-type first MIS transistor and a second-conductivity-type second MIS transistor. The first and second MIS transistors include a first and a second gate insulating film formed on a first and a second active region surrounded by a separation region of a semiconductor substrate, and a first and a second gate electrode formed on the first and second gate insulating films. The first and second gate insulating films are separated from each other on a first separation region of the separation region. A distance s between first ends of the first and second active regions facing each other with the first separation region being interposed therebetween, and a protrusion amount d1 from the first end of the first active region to a first end of the first gate insulating film located on the first separation region establish a relationship d1<0.5 s.
    Type: Application
    Filed: July 20, 2012
    Publication date: November 8, 2012
    Applicant: Panasonic Corporation
    Inventors: Yoshiya MORIYAMA, Hiromasa FUJIMOTO, Satoru ITOU, Susumu AKAMATSU, Hiroshi OHKAWA
  • Patent number: 7804146
    Abstract: A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile.
    Type: Grant
    Filed: February 8, 2008
    Date of Patent: September 28, 2010
    Assignee: Panasonic Corporation
    Inventors: Hiroshi Ohkawa, Junji Hirase, Hisashi Ogawa, Kenji Yoneda
  • Publication number: 20080258229
    Abstract: A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile.
    Type: Application
    Filed: February 8, 2008
    Publication date: October 23, 2008
    Inventors: Hiroshi OHKAWA, Junji Hirase, Hisashi Ogawa, Kenji Yoneda
  • Publication number: 20080017927
    Abstract: A semiconductor device includes a dual gate electrode lying across the tops of a first element region and a second element region formed apart from each other with an isolation region interposed between the first and second element regions. The dual gate electrode is composed of two silicide regions with different compositions: a first silicide region on top of the first element region and a second silicide region on top of the second element region. The interface between the first and second silicide regions includes a tilted plane.
    Type: Application
    Filed: June 5, 2007
    Publication date: January 24, 2008
    Inventor: Hiroshi Ohkawa
  • Patent number: 6975066
    Abstract: An object is to provide an organic EL element which can realize the improvement in the difference of an emission luminance due to the difference of an emission rise time in a plurality of light emitting portions. Segment portions S for determining an emission in a specific shape and wiring portions L for separately supplying electric currents to the segment portions S are formed. An area of the wiring portion L of the segment portion S is enlarged such that an emission luminance in the segment portion S falls within a range of from a minimum luminance to a luminance 30% higher than that.
    Type: Grant
    Filed: June 22, 2001
    Date of Patent: December 13, 2005
    Assignee: Nippon Seiki Co., Ltd.
    Inventors: Hitoshi Wakai, Jun-Ichi Maruyama, Hiroshi Ohkawa
  • Publication number: 20030093292
    Abstract: A foreign application supporting system being characterized in that it is provided with: application information disclosing means for disclosing, after completing a first country application, an outline of the first country application at least upon receiving the provision of information regarding the first country application; and supporter recruiting means for recruiting a supporter who judges, based on the content disclosed by the application information disclosing means, to wish to support a second country application.
    Type: Application
    Filed: October 21, 2002
    Publication date: May 15, 2003
    Inventor: Hiroshi Ohkawa
  • Patent number: 6542853
    Abstract: A life estimation device which numerically measures the damage to a machine such as an engine accurately to estimate, the life of the machine accurately without requiring skill. A load map (B) of the two-dimensional distribution of the operation parameters of an engine is made. In accordance with the weighted integration time &agr;i·ki at each level (Bi) of the load map (B), the actual damage &dgr;=&Sgr;&agr;i·ki to the engine for a certain lapse of time &tgr; is calculated. By operating the engine beforehand, a correspondence relation L2 between the magnitude of the damage &dgr; and the life H is predetermined. The life H1 corresponding to the calculated actual damage &dgr;1 is determined in accordance with the predetermined correspondence relation L2 and the H1 is outputted as the estimated life of the engine.
    Type: Grant
    Filed: May 15, 2000
    Date of Patent: April 1, 2003
    Assignee: Komatsu, Ltd.
    Inventors: Taku Murakami, Ichio Ichikawa, Haruo Hashimoto, Koji Iijima, Fumihide Sato, Hiroshi Ohkawa
  • Publication number: 20020163298
    Abstract: An object is to provide an organic EL element which can realize the improvement in the difference of an emission luminance due to the difference of an emission rise time in a plurality of light emitting portions. Segment portions S for determining an emission in a specific shape and wiring portions L for separately supplying electric currents to the segment portions S are formed. An area of the wiring portion L of the segment portion S is enlarged such that an emission luminance in the segment portion S falls within a range of from a minimum luminance to a luminance 30% higher than that.
    Type: Application
    Filed: May 13, 2002
    Publication date: November 7, 2002
    Inventors: Hitoshi Wakai, Jun-Ichi Maruyama, Hiroshi Ohkawa
  • Patent number: 5483913
    Abstract: The floating structure 1 includes a sheet held at a predetermined position by a column 2 which is positioned at the bottom of the water or a cable body 8 in which one end thereof is fixed to the bottom, and a levee wall which is projected from the water surface at a marginal portion. A rigid member can be fixed to the sheet for improving rigidity. Furthermore, a floating body for weakening the wave 70 can be installed at the marginal portion of the floating structure 1.
    Type: Grant
    Filed: June 8, 1994
    Date of Patent: January 16, 1996
    Inventors: Hiroshi Ohkawa, Takao Nonoyama