Abstract: In a cutting edge of a razor blade, a non-nitrided layer containing Ti, Al, and Cr formed on opposite surfaces of a base plate as a portion of a coating layer. A remaining layer containing Ti, Al, Cr, and N formed on opposite surfaces of the non-nitrided layer as a portion of a nitrided layer of the coating layer. A surface layer containing Ti, Al, Cr, and N formed on opposite surfaces of the remaining layer as a portion of the nitrided layer of the coating layer. A fluororesin layer formed on opposite surfaces of the surface layer with a bonding layer containing Cr and Al in between. The coating layer further improves the cutting edge, enhances cutting performance of the cutting edge, and maintains the enhanced cutting performance to improve the durability of the cutting edge.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Abstract: In a vacuum chamber, the edge of each blade group is subjected to an ion beam treatment under predetermined conditions using a plasma ion gun and argon as a medium, and is subjected to a plasma ion implantation of nitrogen plasma under predetermined conditions using a plasma ion implantation gun. As a result, it is possible to provide a blade member having an edge of a cutting quality enhanced by increasing the sharpness, a blade member having an edge of a rigidity enhanced by increasing the hardness, and a working apparatus capable of working those edges efficiently.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Abstract: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Abstract: In a vacuum chamber, the edge of each blade group is subjected to an ion beam treatment under predetermined conditions using a plasma ion gun and argon as a medium, and is subjected to a plasma ion implantation of nitrogen plasma under predetermined conditions using a plasma ion implantation gun. As a result, it is possible to provide a blade member having an edge of a cutting quality enhanced by increasing the sharpness, a blade member having an edge of a rigidity enhanced by increasing the hardness, and a working apparatus capable of working those edges efficiently.

Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Abstract: In a cutting edge of a razor blade, a non-nitrided layer containing Ti, Al, and Cr is formed on opposite surfaces of a base plate as a portion of a coating layer. A remaining layer containing Ti, Al, Cr, and N is formed on opposite surfaces of the non-nitrided layer as a portion of a nitrided layer of the coating layer. A surface layer containing Ti, Al, Cr, and N is formed on opposite surfaces of the remaining layer as a portion of the nitrided layer of the coating layer. A fluororesin layer is formed on opposite surfaces of the surface layer with a bonding layer containing Cr and Al in between. The coating layer including the non-nitrided layer and the nitrided layer further improves the cutting edge, enhances cutting performance of the cutting edge, and maintains the enhanced cutting performance to improve the durability of the cutting edge.

Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Abstract: A blade with improved sharpness and durability is disclosed. The blade includes a base plate having an edge and a coating layer for coating the edge. The coating layer is formed of a material handling metal, and a tip of the coating layer is sharpened. It is preferred that an angle (Ba) between two tapered surfaces be between 15 to 45 degrees.

Abstract: A razor handle includes a hard section and a soft section integrally formed and overlapping each other. On the rear surface of a gripping section, a second rear contact section of the soft section is exposed and a finger applying concave section is formed at the upper section of the second rear contact section. On the front surface of the gripping section, the first front contact section of the hard section is exposed at the boundary section with a side surface, the second front contact section of the soft section is exposed between the first front contact sections at the both boundary sections, and a concave area is formed on the upper section of the second front contact section.

Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Abstract: A blade (1) with improved sharpness and durability is disclosed. The blade includes a base plate (3) having an edge and a coating layer (6) for coating the edge. The coating layer is formed of a material including metal, and a tip of the coating layer (2a) is sharpened. It is preferred that an angle (&bgr;a) between two tapered surfaces (7a, 8a) be between 15 to 45 degrees.

Abstract: A razor handle includes a hard section and a soft section integrally formed and overlapping each other. On the rear surface of a gripping section, a second rear contact section of the soft section is exposed and a finger applying concave section is formed at the upper section of the second rear contact section. On the front surface of the gripping section, the first front contact section of the hard section is exposed at the boundary section with a side surface, the second front contact section of the soft section is exposed between the first front contact sections at the both boundary sections, and a concave area is formed on the upper section of the second front contact section.