Abstract: The present invention provides a single-crystal manufacturing apparatus comprising a chamber that accommodates a crucible containing a raw material melt; a pulling mechanism for pulling a single crystal; a heater for heating the raw material melt, the heater being movable upwardly and downwardly; and a temperature measurement means for measuring temperature of the heater, wherein the temperature measurement means is movable upwardly and downwardly in response to the upward and downward movement of the heater. The present invention provides a single-crystal manufacturing apparatus and a method for manufacturing a single crystal that can stably measure the heater temperature regardless of a change in operation conditions and hence stably control the heater temperature and the heater output, resulting in a stable operation.

Abstract: A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.

Abstract: A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.

Abstract: A method for automatically controlling growing a single crystal neck portion by the CZ method, comprising the steps of pulling up a seed crystal (30) at 2 mm/min. for five minutes so as to grow a single crystal 32; next measuring a diameter of the lower end of the crystal; modifying an electric power for heating a melt based on the difference between the measured diameter and a reference value; waiting for five minutes; keeping the electric power constant for 10 minutes with controlling the pulling up speed so as to approach the diameter of the crystal to the reference value and with measuring the pulling up speed repeatedly; and next modifying the power based on the difference between the mean speed and a reference value. The last two steps are repeated alternatively.

Abstract: Disclosed are a method of and a device for crystal diameter measurement in an apparatus for automatically controlling single crystal growth by the CZ technique. In the diameter measurement method, a growing region of a single crystal 32 is photographed by a camera 38, and an outer diamter Do of a luminous ring image 70 having a luminance above a reference value E is detected from a video signal supplied from the camera 38, the diameter Do thus detected being used for crystal diameter control.