Abstract: According to an embodiment, a radiation detector includes: a substrate; multiple control lines; multiple data lines; multiple detecting parts detecting radiation including thin film transistors; a control circuit switching between ON and OFF-states of the transistor; a signal detection circuit reading image data when the transistor is in the ON-state; and an incident radiation detecting part determining an incidence start time of the radiation based on a value of the image data read when the transistor is in the ON-state. When the incident radiation detecting part determines that radiation incidence has started, the signal detection circuit performs a first reading process of further reading image data when the transistor is in the ON-state. The control circuit performs an image storage process of setting all of the transistors to the OFF-state after the first reading process.

Abstract: A radiation detector includes control and data lines extending respectively in mutually-orthogonal first and second directions, photoelectric conversion parts respectively in regions defined by the control and data lines, noise detecting parts outside a region including the photoelectric conversion parts, a control circuit inputting control signals to first and second thin film transistors located respectively in the photoelectric conversion and noise detecting parts, a signal detection circuit reading image data and noise signals respectively from the photoelectric conversion and noise detecting parts, and an image configuration circuit configuring a radiation image based on the signals that are read.

Abstract: A radiation detector includes control lines extending in a first direction, data lines extending in a second direction orthogonal to the first direction, photoelectric conversion parts respectively in regions defined by the control and data lines, noise detecting parts arranged outside a region where the photoelectric conversion parts are located, and a scintillator located on the region where the photoelectric conversion parts are located. Each photoelectric conversion part includes a first thin film transistor electrically connected to corresponding control and data lines, and a photoelectric conversion element including an electrode electrically connected with the first thin film transistor. Each noise detecting part includes a second thin film transistor electrically connected to corresponding control and data lines, and a capacitance part electrically connected with the second thin film transistor.

Abstract: A radiation detector according to an embodiment includes an array substrate including multiple detecting parts detecting radiation directly or in collaboration with a scintillator, an analog circuit reading an image data signal from the multiple detecting parts, a digital circuit configuring a radiation image based on a signal from the analog circuit, and an inductor connected between a ground of the analog circuit and a ground of the digital circuit.

Abstract: According to an embodiment, a radiation detector includes: a substrate; multiple control lines; multiple data lines; multiple detecting parts detecting radiation including thin film transistors; a control circuit switching between ON and OFF-states of the transistor; a signal detection circuit reading image data when the transistor is in the ON-state; and an incident radiation detecting part determining an incidence start time of the radiation based on a value of the image data read when the transistor is in the ON-state. When the incident radiation detecting part determines that radiation incidence has started, the signal detection circuit performs a first reading process of further reading image data when the transistor is in the ON-state. The control circuit performs an image storage process of setting all of the transistors to the OFF-state after the first reading process.

Abstract: A radiation detector includes a substrate, control lines provided on the substrate and extending in a first direction, data lines provided on the substrate and extending in a second direction crossing the first direction, and detection parts arranged in a matrix. Each detection part includes a thin film transistor and a conversion part converting radiation or light into electricity. Further, a control circuit switches an on state and an off state of each thin film transistor and a signal detection circuit reads out image data in the on state of the thin film transistor. Further, the detector judges a start time of radiation incidence based on a value of the image data read out in the on state of each thin film transistor.

Abstract: A radiation detector includes a substrate, control lines provided on the substrate and extending in a first direction, data lines provided on the substrate and extending in a second direction crossing the first direction, and detection parts arranged in a matrix. Each detection part includes a thin film transistor and a conversion part converting radiation or light into electricity. Further, a control circuit switches an on state and an off state of each thin film transistor and a signal detection circuit reads out image data in the on state of the thin film transistor. Further, the detector judges a start time of radiation incidence based on a value of the image data read out in the on state of each thin film transistor.

Abstract: According to one embodiment, a radiation detector includes a substrate, control lines, data lines, a photoelectric conversion part provided in a region drawn by the control and data lines, and including thin film transistors and photoelectric conversion elements electrically connected to the corresponding control and data lines, a control circuit electrically connected to the control lines, a signal detection circuit electrically connected to the data lines, at least one reference potential part electrically connected to the signal detection circuit, and a determination part electrically connected to the signal detection circuit. The signal detection circuit detects a first current integral value via the data lines and detects a second current integral value from the at least one reference potential part. The determination part determines an incidence start time of a radiation on the basis of a difference between the detected first and second current integral values.

Abstract: According to one embodiment, a radiation detector includes a substrate, control lines, data lines, a photoelectric conversion part provided in a region drawn by the control and data lines, and including thin film transistors and photoelectric conversion elements electrically connected to the corresponding control and data lines, a control circuit electrically connected to the control lines, a signal detection circuit electrically connected to the data lines, at least one reference potential part electrically connected to the signal detection circuit, and a determination part electrically connected to the signal detection circuit. The signal detection circuit detects a first current integral value via the data lines and detects a second current integral value from the at least one reference potential part. The determination part determines an incidence start time of a radiation on the basis of a difference between the detected first and second current integral values.

Abstract: According to one embodiment, a radiation detector includes an array substrate including a plurality of control lines, a plurality of data lines, and a plurality of detection parts, the detection parts detecting radiation directly or in cooperation with a scintillator, a signal detection circuit reading out an image data signal from the plurality of detection parts, a noise detection circuit detecting a noise, a plurality of first wirings, one end portion of each of the first wirings being electrically connected to the data lines, other end portion of each of the first wirings being electrically connected to the signal detection circuit, and a second wiring, one end portion of the second wiring being not electrically connected to the data lines being electrically connected to the plurality of detection parts.

Abstract: To provide a method of refresh operation for a flat panel radiation imager that makes it possible to carry out a refresh operation in such a way that electric charge that is accumulated in pixels by photoelectric conversion is efficiently released with low power consumption and during a short period of time. Control signals of the refresh operation are turned into a plurality of successive pulses at regular intervals; and timing is adjusted in a way that adjacent switching elements disposed on the same signal line are not turned ON at the same timing.

Abstract: To provide a method of refresh operation for a flat panel radiation imager that makes it possible to carry out a refresh operation in such a way that electric charge that is accumulated in pixels by photoelectric conversion is efficiently released with low power consumption and during a short period of time. Control signals of the refresh operation are turned into a plurality of successive pulses at regular intervals; and timing is adjusted in a way that adjacent switching elements disposed on the same signal line are not turned ON at the same timing.

Abstract: A radiation image processing device comprises a noise component extraction part which extracts a noise component from a radiation image, a line-shaped noise component extraction part which extracts a line-shaped noise component from the noise component extracted by the noise component extraction part, and a line-shaped noise component subtraction part which subtracts the line-shaped noise component, extracted by the line-shaped noise component extraction part, from the radiation image.

Abstract: A semiconductor photodiode includes: an insulative substrate; a first conductivity type semiconductor layer formed on the insulative substrate; an i-type semiconductor layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the i-type semiconductor layer; and a metal electrode. The metal electrode is provided between the insulative substrate and the first conductivity type semiconductor layer so that a peripheral face of the metal electrode is located inside a peripheral face of the first conductivity type semiconductor layer.

Abstract: An X-ray detector (5) comprises an X-ray-electric charge conversion film (21) for directly converting into charges an incident X-ray that has passed through a subject (2) and is received, and a charge information reading section (15) for detecting charges produced by the X-ray-electric charge conversion film (21) as image signals. The X-ray-electric charge conversion film (21) consists essentially of a rare-earth compound containing at least one of rare-earth element and at least one of element selected from oxygen, sulfur, selenium and tellurium. The X-ray-electric charge conversion film (21) does not adversely affect human bodies and environment, and is excellent in sensitivity, film-forming feature and the like. Accordingly, the X-ray detector (5) which is provided with the improved X-ray detection sensitivity, detection accuracy and the like with environmental loads and the like decreased can be provided.

Abstract: A radiation detector comprises pixel electrodes which collect charges, a photoelectric converting layer which is provided on the pixel electrodes and which converts incident radiation into the charges, and which contains at least one or more kinds of heavy metal halide (ABn:A=heavy metal, B=halogen, n=either one of 1, 2, and 3) and at least one or more kinds of halogen (B2) respectively, and an electrode layer which is provided on the photoelectric converting layer opposite to the pixel electrodes.

Abstract: A radiation detector comprises pixel electrodes which collect charges, a photoelectric converting layer which is provided on the pixel electrodes and which converts incident radiation into the charges, and which contains at least one or more kinds of heavy metal halide (ABn:A=heavy metal, B=halogen, n=either one of 1, 2, and 3) and at least one or more kinds of halogen (B2) respectively, and an electrode layer which is provided on the photoelectric converting layer opposite to the pixel electrodes.

Abstract: An X-ray detector comprising a scintillator layer (38) provided for each pixel and adapted for converting X radiation into light, a storage capacitor (15) for storing, as electric charge, the light converted in the scintillator layer (38), and a partition layer (39) partitioning the adjoining scintillator layers (38) provided to the respective pixels. The scintillator layer (38) contains a fluorescent material (I), the partition layer contains a second phosphor (P2) having optical characteristics different from those of the fluorescent material (IP1). The wavelength of the fluorescent light emitted from the second phosphor (P2) includes a component which is equal to or longer than the shortest wavelength of the fluorescent light emitted from the fluorescent material (IP1).

Abstract: An X-ray detector comprising a scintillator layer (38) provided for each pixel and adapted for converting X radiation into light, a storage capacitor (15) for storing, as electric charge, the light converted in the scintillator layer (38), and a partition layer (39) partitioning the adjoining scintillator layers (38) provided to the respective pixels. The scintillator layer (38) contains a fluorescent material (I), the partition layer contains a second phosphor (P2) having optical characteristics different from those of the fluorescent material (IP1). The wavelength of the fluorescent light emitted from the second phosphor (P2) includes a component which is equal to or longer than the shortest wavelength of the fluorescent light emitted from the fluorescent material (IP1).

Abstract: According to this invention, a traveling-wave tube amplifier includes a traveling-wave tube having a multistage depressed collector and a power supply for applying operation voltages to the traveling-wave tube. A body voltage (Vb) for a cathode of the traveling-wave tube is set to be lower than a small-signal synchronous voltage (Vbs) at which a small-signal gain of the traveling-wave tube is maximized. As a result, a tube efficiency (.eta.t) of the traveling-wave tube can be increased and an efficiency of the traveling-wave tube amplifier can be increased as compared with a conventional device.