Abstract: A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.

Abstract: A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.

Abstract: A solid-state imaging device (101) includes an imaging area (1), an optical black area (2) provided at a periphery of the imaging area (1), and a light-absorption unit (21) provided above the optical black area (2). In the imaging area (1), a plurality of photoreceptors are arranged in a two-dimensional pattern, and in the optical black area (2), a plurality of photoreceptors are covered by a light-blocking film (15a). The light-absorption unit (21) includes a first filter (20b) and a second filter (20c) in an alternating arrangement, the first filter (20b) allowing visible light of a first type to pass through, and the second filter (20c) absorbing visible light of the first type that passes through the first filter (20b) and is reflected off the light-blocking film (15a).

Abstract: A solid-state imaging device according to an aspect of the present invention includes: a first photodiode and a second photodiode; a first optical waveguide formed above the first photodiode; a second optical waveguide formed above the second photodiode; a first color filter which is formed above the first optical waveguide and transmits mainly light having a first wavelength; a second color filter which is formed above the second optical waveguide and transmits mainly light having a second wavelength; a first microlens formed above the first color filter; and a second microlens formed above the second color filter, wherein the first wavelength is longer than the second wavelength, and the first optical waveguide has a first width smaller than a second width of the second optical waveguide, the first and second widths being in a direction parallel to the semiconductor substrate.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: Light shielding films for preventing color mixture are disposed between Green filters 106 such that the light shielding films are located on the opposite corners of the Green filters 106 arranged in a checkered pattern, thereby preventing color mixture caused by light 111 diagonally incident from an invalid region between the Green filters 106 adjacent to each other in a diagonal direction of the Green filter 106. Since light shielding films for preventing color mixture are further disposed on the vertical and horizontal boundaries between adjacent pixels, it is possible to prevent the incident light 111 reflected on the light shielding film formed on a transfer electrode 102 from being incident on a light receiving portion 101 in the vertical and horizontal directions, thereby preventing color mixture from the adjacent pixels. Thus it is possible to suppress color mixture while keeping sensitivity characteristics, and prevent deterioration of image characteristics.

Abstract: A solid-state image sensor having unit pixel cells arranged in a matrix form, each unit pixel cell having a photoelectric conversion element formed on a semiconductor substrate, a color filter formed on the photoelectric conversion element and a micro-lens formed on the color filter, where a thickness of the color filter is greater in the center than in the periphery. Further, the color filters adjoin in vertical and horizontal directions in the arrangement of the unit pixel cells. A cross-sectional shape of the color filter is, for example, triangular, trapezoidal, convex, lens-shaped or semielliptic.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A solid-state image sensor of the present invention is a solid-state image sensor in which pixel cells are arranged on a semiconductor substrate, wherein each of the pixel cells includes: a photoelectric conversion unit that performs photoelectric conversion of incident light; and a microlens formed above the photoelectric conversion unit, the microlens corresponding to the photoelectric conversion unit, wherein the microlens includes a transparent layer and a color filter layer.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lenses on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.