Abstract: A water-repellent structure includes: a base material; and a water-repellent layer located on a surface of the base material. The water-repellent layer contains water-repellent particles and filler particles having an average particle size that is 20 times or more as large as an average particle size of the water-repellent particles.

Abstract: A water-repellent structure includes: a base material; and a water-repellent layer located on a surface of the base material. The water-repellent layer contains water-repellent particles and filler particles having an average particle size that is 20 times or more as large as an average particle size of the water-repellent particles.

Abstract: A process apparatus includes an electrostatic chuck disposed at a substrate holder. The electrostatic chuck includes a dielectric and an electrode. The electrode is disposed in an interior of the dielectric. The apparatus further includes a circuit electrically connected to the electrode of the electrostatic chuck and a first earth wire electrically connected to the circuit. The first earth wire is shielded by a metal with an electrically insulating cover interposed.

Abstract: A silicon carbide member for a plasma processing apparatus is obtained by mixing an ?-silicon carbide powder having an average particle size of 0.3 to 3 ?m, with an amount of metal impurities in the ?-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising B4C in amount of 0.5 to 5 weight parts or Al2O3 and Y2O3 in total amount of 3 to 15 weight parts; sintering a mixture of the ?-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.

Abstract: An electrostatic chuck includes a first electrode provided in a first plane, a second electrode provided in a second plane parallel to the first plane, and an insulator. The second electrode includes a plurality of portions which intersect with an intersection line between a region in which the first electrode is orthogonally projected to the second plane and a third plane vertical to the second plane. The insulator is provided between the first and second electrodes.

Abstract: A silicon carbide member for a plasma processing apparatus is obtained by mixing an ?-silicon carbide powder having an average particle size of 0.3 to 3 ?m, with an amount of metal impurities in the ?-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising B4C in amount of 0.5 to 5 weight parts or Al2O3 and Y2O3 in total amount of 3 to 15 weight parts; sintering a mixture of the ?-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.

Abstract: An electrostatic chuck includes a first electrode provided in a first plane, a second electrode provided in a second plane parallel to the first plane, and an insulator. The second electrode includes a plurality of portions which intersect with an intersection line between a region in which the first electrode is orthogonally projected to the second plane and a third plane vertical to the second plane. The insulator is provided between the first and second electrodes.

Abstract: A valve includes a housing which includes a first opening part connectable to a first pipe and a second opening part connectable to a second pipe. A first valve is provided in the housing and is capable of being inserted into or removed from between the first opening part and the second opening part. The first valve includes an outer edge located outside an outer edge of the first or second opening part. The first valve has a third opening part smaller than the first and second opening parts. A second valve is provided in the housing, and is capable of being inserted into or removed from between the first opening part and the second opening part. The second valve includes an outer edge located outside an outer edge of the third opening part. The second valve is capable of closing at least a part of the third opening part.

Abstract: According to one embodiment, a deposition apparatus includes a plasma gun, a detector, and a controller. The plasma gun is capable of ejecting a plasma gas, and is capable of forming a film on a work piece exposed to the plasma gas. The detector detects a temperature or a luminous intensity in the plasma gas in a direction of ejection of the plasma gas. The controller controls a distance between the work piece and the plasma gun based on the temperature or the luminous intensity obtained from the detector, so that the plasma gas has a temperature in a range from a first temperature to a second temperature or a luminous intensity in a range from a first luminous intensity to a second luminous intensity is irradiated to the work piece.

Abstract: An object of the present invention is to provide a liquid developing electrographic device roller suppressed in volumetric variation caused by a carrier. As a means for solving the problems, the present invention provides a liquid developing electrophotographic device roller including a shaft and an elastic material layer provided around the outer peripheral side of the shaft, wherein the elastic material layer is formed by using a polyurethane obtained by reacting a polyester polyol with a difunctional isocyanate.

Abstract: An object of the present invention is to provide a liquid developing electrographic device roller suppressed in volumetric variation caused by a carrier. As a means for solving the problems, the present invention provides a liquid developing electrophotographic device roller including a shaft and an elastic material layer provided around the outer peripheral side of the shaft, wherein the elastic material layer is formed by using a polyurethane obtained by reacting a polyester polyol with a difunctional isocyanate.