Abstract: An electrophoresis device includes a first substrate and a second substrate that retain an electrophoretic dispersion liquid including charged particles and a dispersion medium, and a partition wall portion that partitions a gap between the first substrate and the second substrate into a plurality of cells, in which the partition wall portion includes a communicating portion that causes the adjacent cells to communicate with each other.

Abstract: A fluid transport apparatus includes a pressure chamber to which a fluid is supplied, N drive elements that deliver the fluid to a channel by changing pressure of the fluid within the pressure chamber, and a control section that supplies a drive signal to each of the drive elements. The control section controls the N (N?2) drive elements such that phases of drive signals which are supplied to each of the drive elements are different from each other. Therefore, by changing the pressure of the fluid within the pressure chamber while suppressing an amplitude of the drive elements as a whole, pulsation of the fluid is effectively suppressed.

Abstract: A method for placing a resist film of a region having a small film thickness with good shape accuracy is provided. The method has processes of placing a photoresist film 15 on a substrate body 10, exposing the photoresist film 15 using a halftone mask 30 having light transmittances of three or more tones, and developing the photoresist film 15. The photoresist film 15 after the development has a first photoresist film 16 and a second photoresist film 17 that is thicker than the first photoresist film 16. On the substrate body 10 after the development, the second photoresist film 17 is placed at a location where the second photoresist film 17 can be placed without removing the photoresist film 15.

Abstract: An aspect of a chemical synthesis device according to the invention includes a substrate in which a channel for chemically synthesizing a plurality of fluids with each other is formed, and a wiring portion that is provided in the substrate, in which an electric resistance value of the wiring portion changes due to the wiring portion coming into contact with the fluids.

Abstract: There is provided a conductive pattern forming method that can suppress shape abnormalities caused by the reattachment of a neodymium component. A conductive pattern forming method according to an aspect of the invention includes forming an aluminum-neodymium alloy film on a base material; forming, on the aluminum-neodymium alloy film, a conductive film having a thickness greater than or equal to ¼ times the thickness of the aluminum-neodymium alloy film; and patterning the aluminum-neodymium alloy film and the conductive film by using dry etching.

Abstract: A fluid transport apparatus includes a pressure chamber to which a fluid is supplied, N drive elements that deliver the fluid to a channel by changing pressure of the fluid within the pressure chamber, and a control section that supplies a drive signal to each of the drive elements. The control section controls the N (N?2) drive elements such that phases of drive signals which are supplied to each of the drive elements are different from each other. Therefore, by changing the pressure of the fluid within the pressure chamber while suppressing an amplitude of the drive elements as a whole, pulsation of the fluid is effectively suppressed.

Abstract: There is provided a conductive pattern forming method that can suppress shape abnormalities caused by the reattachment of a neodymium component. A conductive pattern forming method according to an aspect of the invention includes forming an aluminum-neodymium alloy film on a base material; forming, on the aluminum-neodymium alloy film, a conductive film having a thickness greater than or equal to ¼ times the thickness of the aluminum-neodymium alloy film; and patterning the aluminum-neodymium alloy film and the conductive film by using dry etching.

Abstract: A method for placing a resist film of a region having a small film thickness with good shape accuracy is provided. The method has processes of placing a photoresist film 15 on a substrate body 10, exposing the photoresist film 15 using a halftone mask 30 having light transmittances of three or more tones, and developing the photoresist film 15. The photoresist film 15 after the development has a first photoresist film 16 and a second photoresist film 17 that is thicker than the first photoresist film 16. On the substrate body 10 after the development, the second photoresist film 17 is placed at a location where the second photoresist film 17 can be placed without removing the photoresist film 15.

Abstract: A photomask includes a light-blocking section that blocks light and also includes a light intensity difference section that controls the intensity of light. The light-blocking section is disposed between the light intensity difference section and a light-transmissive region transmitting light.

Abstract: A liquid crystal device includes a substrate, an opposing substrate disposed so as to face the substrate, a liquid crystal layer interposed between the substrate and the opposing substrate, and a plurality of spacers disposed between the substrate and the opposing substrate and having different aspect ratios from each other.

Abstract: A method of manufacturing a light-emitting device, in which a light-emitting body is sealed between a substrate and a sealing body, includes forming a light-emitting layer, made of a light emitting material, on the surface of the substrate; forming the sealing body which partially covers the light-emitting layer; and removing portions of the light-emitting layer, which are not covered by the sealing body, using the sealing body as a mask, thereby forming the light-emitting body.

Abstract: A method for producing a semiconductor device includes forming an electrically conductive pattern so as to overlap in a plan view with part of a semiconductor layer provided on a substrate, on the opposite side of the substrate side of the semiconductor layer; implanting an impurity into the semiconductor layer using the electrically conductive pattern as a mask; reducing a superimposed region that is a region where the electrically conductive pattern and the semiconductor layer overlap with each other in a plan view by removing part of the electrically conductive pattern after the implantation of the impurity; and implanting the impurity into the semiconductor layer using the electrically conductive pattern as a mask after the reduction of the superimposed region.

Abstract: A photomask includes a light-blocking section that blocks light and also includes a light intensity difference section that controls the intensity of light. The light-blocking section is disposed between the light intensity difference section and a light-transmissive region transmitting light.

Abstract: A liquid crystal device includes a substrate, an opposing substrate disposed so as to face the substrate, a liquid crystal layer interposed between the substrate and the opposing substrate, and a plurality of spacers disposed between the substrate and the opposing substrate and having different aspect ratios from each other.

Abstract: A method of manufacturing a thin film semiconductor device which includes a thin film transistor having a first semiconductor layer, a gate insulating layer, and a gate electrode which are laminated in this order on a substrate, and a capacitive element having a lower electrode that conductively connects a second semiconductor layer coplanar with the first semiconductor layer, a dielectric layer coplanar with the gate insulating layer, and an upper electrode coplanar with the gate electrode which are laminated in this order on the substrate is provided. The method includes, after simultaneously forming the gate insulating layer and the dielectric layer, and before forming the gate electrode and the upper electrode, introducing dopants into the second semiconductor layer from a first opening of a mask formed on a surface of the substrate to form the lower electrode, and etching a surface of the dielectric layer from the first opening of the mask.

Abstract: The invention provides a method for manufacturing an insulating layer for electro-optical devices, wherein the insulating layer contains an insulating material used for electro-optical devices and is not deteriorated in display property. The method for manufacturing an insulating layer for electro-optical devices according to the present invention can include an exposure step of performing exposure for a protrusion-forming layer containing a photosensitive resin (insulating material) with an illuminance of 80 mW/cm2 or more. The resin can be decolorized due to the exposure performed with such high illuminance, and therefore an obtained insulating material has a transmittance of 95% or more with respect to a colored ray having a wavelength of 400 nm.

Abstract: The present invention is directed to a method of manufacturing a semiconductor device including a semiconductor layer having a heavily doped source region, a heavily doped drain region, a lightly doped source region, a lightly doped drain region and a channel region, and a gate electrode opposite to the semiconductor layer with an insulating layer interposed therebetween. The method includes forming a semiconductor film on a substrate, forming a resist on the semiconductor film such that a first portion of the resist corresponding to the heavily doped source region and the heavily doped drain region is thinner than a second portion of the resist corresponding to the lightly doped source region, the lightly doped drain region and the channel region.

Abstract: A thin-film semiconductor device includes, on the same substrate, a thin-film transistor, in which an active layer, a gate insulating film, and a gate electrode are laminated, and a capacitive element, in which a first electrode formed using a semiconductor film formed on the same layer as the active layer, a dielectric film formed on the same layer as the gate insulating film, and a second electrode formed on the same layer as the gate electrode are laminated. In the capacitive element, in plan view, the dielectric film has a first region that is formed in a region inside outer circumferences of the first and second electrodes and that has a film thickness smaller than that of the gate insulating film, and a second region that is formed in a region outside the first region and that has a film thickness larger than that of the first region.

Abstract: [Object] To provide a method for manufacturing an insulating layer for electro-optical devices, wherein the insulating layer contains an insulating material used for electro-optical devices and is not deteriorated in display property. [Solving Means] A method for manufacturing an insulating layer for electro-optical devices according to the present invention includes an exposure step of performing exposure for a protrusion-forming layer 7 containing a photosensitive resin (insulating material) with an illuminance of 80 mW/cm2 or more. The resin is decolorized due to the exposure performed with such high illuminance, and therefore an obtained insulating material has a transmittance of 95% or more with respect to a colored ray having a wavelength of 400 nm.

Abstract: A method of manufacturing a light-emitting device, in which a light-emitting body is sealed between a substrate and a sealing body, includes forming a light-emitting layer, made of a light emitting material, on the surface of the substrate; forming the sealing body which partially covers the light-emitting layer; and removing portions of the light-emitting layer, which are not covered by the sealing body, using the sealing body as a mask, thereby forming the light-emitting body.