Abstract: A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 ?m, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R4?SO3? (wherein, R4? represents a linear or branched alkyl group or fluoroalkyl group of 4 carbon atoms), and a nitrogen-containing organic compound (D) that includes a tertiary aliphatic amine.

Abstract: A positive resist composition for producing MEMS using an electron beam, the composition comprising a resin component (A) that displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon irradiation, wherein the resin component (A) is a resin prepared by protecting a portion of all the hydroxyl groups within an alkali-soluble novolak resin with acid-dissociable, dissolution-inhibiting groups.

Abstract: A negative resist composition is provided wherein the composition has the sensitivity to g-rays, i-rays, KrF excimer lasers and electron rays, and can be used for mix and match wherein exposure is conducted using at least two exposure light sources selected form g-rays, i-rays, KrF excimer lasers and electron rays. Furthermore, a negative resist composition and a resist pattern forming method are also proposed wherein a resist pattern having excellent high resolution and excellent plating resistance can be formed, and they can be used for manufacturing MEMS.

Abstract: A positive resist composition for producing MEMS using an electron beam, the composition comprising a resin component (A) that displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon irradiation, wherein the resin component (A) is a resin prepared by protecting a portion of all the hydroxyl groups within an alkali-soluble novolak resin with acid-dissociable, dissolution-inhibiting groups.

Abstract: A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 ?m, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R4?SO3? (wherein, R4? represents a linear or branched alkyl group or fluoroalkyl group of 4 carbon atoms), and a nitrogen-containing organic compound (D) that includes a tertiary aliphatic amine.

Abstract: The use of a positive resist composition that includes a resin with a specific structure improves the resolution and yields a resist pattern with a favorable shape. In addition, when a resist layer is formed on either a magnetic film or a metallic oxidation prevention film formed on the magnetic film, the layer is less prone to tailing and undercutting phenomena.

Abstract: A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.

Abstract: There is provided a positive resist composition which enables the formation of a fine resist pattern, enables the angle of the taper shape within that resist pattern to be controlled to a suitable angle, and enables the formation of a resist pattern with an excellent depth width of focus. This positive resist composition is formed from a chemically amplified positive resist composition in which the light transmittance of a resist film of thickness 0.3 ?m, relative to light of wavelength 248 nm, is within a range from 20 to 75%.

Abstract: A positive resist composition, comprising a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) includes either a silsesquioxane resin (A1) containing structural units (a1) represented by a general formula (I) shown below, structural units (a2) represented by a general formula (II) shown below, and structural units (a3) represented by a general formula (III) shown below, or a silsesquioxane resin (A2) containing structural units (al) represented by the general formula (I) shown below, and structural units (a2?) represented by a general formula (II?) shown below.

Abstract: There is provided a negative photoresist composition, which is used in a method of forming a pattern in which an underlayer film is provided on a substrate, a photoresist film formed from the negative photoresist composition is provided on top of the underlayer film, the photoresist film is selectively exposed, and the underlayer film and the photoresist film are then simultaneously subjected to a developing treatment, and which enables favorable resolution to be achieved. This composition includes (A) an alkali-soluble resin, (B) an acid generator that generates acid on irradiation, and (C) a cross-linking agent, and the acid generator (B) includes an onium salt containing a cation with no hydrophilic groups.

Abstract: There is provided a positive resist composition which enables the formation of a fine resist pattern, enables the angle of the taper shape within that resist pattern to be controlled to a suitable angle, and enables the formation of a resist pattern with an excellent depth width of focus. This positive resist composition is formed from a chemically amplified positive resist composition in which the light transmittance of a resist film of thickness 0.3 ?m, relative to light of wavelength 248 nm, is within a range from 20 to 75%.

Abstract: A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.

Abstract: A photoresist pattern with a reinforcing section, provided with a line section 2 and a reinforcing section 3 that continues to the line section and that has a greater width than a line width of the line section is formed by forming on a substrate a photoresist film, exposing the photoresist film and then developing. As a result, fine line shaped photoresist patterns are prevented from collapsing and being washed away.

Abstract: In a coating material for the inner surface of a cathode-ray tube comprising an aqueous dispersion medium containing silicates of lithium and potassium and a dispersing agent, and a graphite particles and, if necessary, particles of the other specific metal compounds suspended therein, the invention is characterized in that the molar ratio of potassium to lithium is in the range of 1 to 9, and the molar ratio of silicon dioxide to the total quantity of oxides of lithium and potassium is in the range of 2.5 to 3.5, and the obtained coating material is most suitable for suppressing the quantities of gases released from the inner coating, for making good use of gas-adsorbing ability of graphite, and for increasing the degree of vacuum in the cathode-ray tube.

Abstract: In a coating material for the inner surface of a cathode-ray tube comprising an aqueous dispersion medium containing silicates of lithium and potassium and a dispersing agent, and a graphite particles and, if necessary, particles of the other specific metal compounds suspended therein, the invention is characterized in that the molar ratio of potassium to lithium is in the range of 1 to 9, and the molar ratio of silicon dioxide to the total quantity of oxides of lithium and potassium is in the range of 2.5 to 3.5, and the obtained coating material is most suitable for suppressing the quantities of gases released from the inner coating, for making good use of gas-adsorbing ability of graphite, and for increasing the degree of vacuum in the cathode-ray tube.

Abstract: Disclosed is a coating material for forming an electrically conductive inner coat. The coating material contains graphite particles, filler particles, an aqueous medium a dispersant and water-glass. The filler particle has a core and a membrane which covers the core. The core is composed of metallic oxide or metallic carbide, and the membrane is composed of alumina and silica, in which the ratio of the amount of the alumina to the amount of the membrane is within a range of 20 to 60% by weight. If the core is iron oxide, the used filler particles have at least 4% by weight of the membrane which contains 20 to 90% by weight of alumina and silica.