Patents by Inventor Hiroshi Shinyashiki

Hiroshi Shinyashiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate for epitaxial growth
    Patent number: 6461447
    Abstract: A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: October 8, 2002
    Assignee: Mitsubish Denki Kabushiki Kaisha
    Inventors: Hiroshi Shinyashiki, Hiroshi Koya, Tomonori Yamaoka, Kazuhito Matsukawa, Yasuhiro Kimura, Hidekazu Yamamoto
  • SOI substrate having monocrystal silicon layer on insulating film
    Patent number: 5891265
    Abstract: Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silicon layer. While maintaining this state, the silicon substrate is heated to a predetermined temperature not less than 1300.degree. C. Alternatively, the silicon substrate is heated at a high temperature-rise rate to 900-1100.degree. C., and thereafter is heated at a low temperature-rise rate to the temperature not less than 1300.degree. C. The silicon substrate is held at the predetermined temperature not less than 1300.degree. C. for a predetermined time, whereby crystallinity of the residual silicon layer is restored.
    Type: Grant
    Filed: August 6, 1997
    Date of Patent: April 6, 1999
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Material Corporation
    Inventors: Tetsuya Nakai, Hiroshi Shinyashiki, Yasuo Yamaguchi, Tadashi Nishimura
  • Method of manufacturing a SOI substrate having a monocrystalline silicon layer on insulating film
    Patent number: 5741717
    Abstract: Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silicon layer. While maintaining this state, the silicon substrate is heated to a predetermined temperature not less than 1300.degree. C. Alternatively, the silicon substrate is heated at a high temperature-rise rate to 900.degree.-1100.degree. C., and thereafter is heated at a low temperature-rise rate to the temperature not less than 1300.degree. C. The silicon substrate is held at the predetermined temperature not less than 1300.degree. C. for a predetermined time, whereby crystallinity of the residual silicon layer is restored.
    Type: Grant
    Filed: February 21, 1995
    Date of Patent: April 21, 1998
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Material Corporation
    Inventors: Tetsuya Nakai, Hiroshi Shinyashiki, Yasuo Yamaguchi, Tadashi Nishimura