Abstract: An electronic component module includes an electronic component, a structure body, a through wiring, and an insulator. The structure body covers at least a portion of the electronic component and has conductivity. The through wiring extends through the structure body. The insulator is disposed at least between the through wiring and the structure body.

Abstract: An electronic component module includes an electronic component, a resin structure body, a through wiring, a wiring layer, and a close-contact layer. The resin structure body covers at least a portion of the electronic component. The through wiring extends through the resin structure body. The wiring layer electrically connects the electronic component and the through wiring to each other. The close-contact layer is provided between the resin structure body and the through wiring and is in contact with the resin structure body and the through wiring. The close-contact layer includes an inorganic insulation film.

Abstract: An electronic component includes a resin structure including first and second surfaces facing each other, an electronic component element contained in the resin structure, including first and second main surfaces facing each other, and side surfaces connecting the first and second main surfaces, and being exposed to the first surface of the resin structure, and a through-electrode penetrating the resin structure to connect the first and second surfaces of the resin structure, in which the through-electrode are in contact with at least one of the side surfaces of the electronic component element.

Abstract: A method of manufacturing a component-embedded substrate includes a resist forming step in which a patterning resist is formed on a support, a patterning step in which a through hole extending through the resist is formed by performing patterning on the resist, a first-electrode forming step in which a through-via electrode is formed by filling the through hole with an electrode material, a resist removing step in which the resist is removed, a component placement step in which an electronic component is placed, a substrate forming step in which a resin substrate is formed by sealing the electronic component with a resin that includes a filler having a diameter larger than the surface roughness of a side surface of the through-via electrode, and a removing step in which the support is removed from the resin substrate. The first-electrode forming step is performed before the substrate forming step is performed.

Abstract: An electronic component module includes an electronic component, a structure body, a through wiring, and an insulator. The structure body covers at least a portion of the electronic component and has conductivity. The through wiring extends through the structure body. The insulator is disposed at least between the through wiring and the structure body.

Abstract: An electronic component module includes an electronic component, a resin structure body, a through wiring, a wiring layer, and a close-contact layer. The resin structure body covers at least a portion of the electronic component. The through wiring extends through the resin structure body. The wiring layer electrically connects the electronic component and the through wiring to each other. The close-contact layer is provided between the resin structure body and the through wiring and is in contact with the resin structure body and the through wiring. The close-contact layer includes an inorganic insulation film.

Abstract: An electronic component includes a resin structure including first and second surfaces facing each other, an electronic component element contained in the resin structure, including first and second main surfaces facing each other, and side surfaces connecting the first and second main surfaces, and being exposed to the first surface of the resin structure, and a through-electrode penetrating the resin structure to connect the first and second surfaces of the resin structure, in which the through-electrode are in contact with at least one of the side surfaces of the electronic component element.

Abstract: A method of manufacturing a component-embedded substrate includes a resist forming step in which a patterning resist is formed on a support, a patterning step in which a through hole extending through the resist is formed by performing patterning on the resist, a first-electrode forming step in which a through-via electrode is formed by filling the through hole with an electrode material, a resist removing step in which the resist is removed, a component placement step in which an electronic component is placed, a substrate forming step in which a resin substrate is formed by sealing the electronic component with a resin that includes a filler having a diameter larger than the surface roughness of a side surface of the through-via electrode, and a removing step in which the support is removed from the resin substrate. The first-electrode forming step is performed before the substrate forming step is performed.

Abstract: The present invention provides a multilayer circuit board that includes a plurality of resin layers, conductive wiring layers, and via-hole conductors. Each of the resin layers includes a resin sheet containing a resin and a conductive wiring layer disposed on at least one surface of the resin sheet. The via-hole conductors contain an intermetallic compound having a melting point of 300° C. or more produced by a reaction between a first metal composed of Sn or an alloy containing 70% by weight or more Sn and a second metal composed of a Cu—Ni alloy or a Cu—Mn alloy. The second metal has a higher melting point than the first metal.

Abstract: The present invention provides a multilayer circuit board that includes a plurality of resin layers, conductive wiring layers, and via-hole conductors. Each of the resin layers includes a resin sheet containing a resin and a conductive wiring layer disposed on at least one surface of the resin sheet. The via-hole conductors contain an intermetallic compound having a melting point of 300° C. or more produced by a reaction between a first metal composed of Sn or an alloy containing 70% by weight or more Sn and a second metal composed of a Cu—Ni alloy or a Cu—Mn alloy. The second metal has a higher melting point than the first metal.