Abstract: There is provided an apparatus for polishing, comprising a table configured to support a polishing pad; a polishing head configured to hold a substrate; and a polishing solution supply device configured to supply a polishing solution between the polishing pad and the substrate. The polishing solution supply device comprises a plurality of polishing solution supply ports arrayed in a direction intersecting with a rotating direction of the polishing pad in a state that the polishing solution supply device is placed on an upstream side in rotation of the polishing pad relative to the substrate. The polishing solution supply device supplies the polishing solution, such that the polishing solution supplied from the plurality of polishing solution supply ports has a predetermined flow rate distribution.

Abstract: A flush toilet includes a reservoir tank, a bowl, a rim spout port, a discharge trap conduit, a jet spout port configured to spout flush water toward an inlet of the discharge trap conduit, a jet water conduit configured to supply the flush water from the reservoir tank to the jet spout port, and a discharge device configured to supply or stop supplying the flush water to the jet water conduit, wherein the flush water is spouted at a first flow rate from the jet spout port when the discharge device is driven and the flush water in the reservoir tank flows into the jet water conduit and, after spouting of the first flow rate ends, the flush water is spouted at a second flow rate from the jet spout port due to the flush water retained in the jet water conduit flowing toward the jet spout port.

Abstract: A siphon jet flush toilet comprises: a bowl; a rim spout port suppling flush water to the bowl; a discharge trap conduit; a jet spout port spouting flush water toward an inlet of the discharge trap conduit; a reservoir tank including a jet spouting discharge valve and storing flush water; a jet water conduit configured to guide the flush water in the reservoir tank to the jet spout port; and a controller being configured to control a rim spouting in which the flush water is spouted from the rim spout port and a jet spouting in which the flush water is spouted from the jet spout port, wherein the jet spouting discharge valve includes a valve body, the valve body being arranged at a position that is lower than an upper surface of the bowl and higher than a seal water level, and before opening the jet spouting discharge valve, the flush water is supplied to the jet water conduit.

Abstract: A substrate processing apparatus includes: a stage having a first contact surface; a freezing device having a second contact surface; an elevating device to be capable of thermally connecting or separating the second contact surface and the first contact surface; and a heat conductive member interposed between the first contact surface and the second contact surface, wherein the heat conductive member is made of a soft metal that is softer than at least one of a material of the first contact surface or a material of the second contact surface.

Abstract: A method of cooling a substrate by bringing a cooler into direct contact with a stage on which the substrate is placed, and processing the substrate while rotating the stage in a state in which the cooler is moved away from the stage, includes: cooling the cooler to a target temperature in a state in which the stage is brought into direct contact with the cooler, and cooling the stage to an initial cooling temperature; raising a temperature of the stage; controlling the temperature of the stage to a steady cooling temperature when the temperature of the stage reaches the steady cooling temperature; and placing the substrate on the stage kept at the steady cooling temperature, and continuously performing a substrate processing on a plurality of substrates while rotating the stage in a state in which the stage is moved away from the cooler.

Abstract: A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

Abstract: A sputtering device includes a processing chamber where a substrate is accommodated, and a slit plate that partitions the processing chamber into a first space where a target member is disposed and a second space where the substrate is disposed. The slit plate includes an inner member having an opening that penetrates therethrough in a thickness direction of the slit plate, and an outer member disposed around the inner member. The inner member is attachable to and detachable from the outer member.

Abstract: A mounting table structure includes a mounting table on which a substrate is mounted, a refrigerating mechanism configured to cool the substrate, an elevating drive part configured to move the mounting table or the refrigerating mechanism up and down, and at least one contact provided at a position between the refrigerating mechanism and the mounting table which face each other. The refrigerating mechanism and the mounting table are allowed to be brought into contact with each other via the contact by moving the mounting table or the refrigerating mechanism up and down by the elevating drive part.

Abstract: There is provided a mounting table. The mounting table comprises: a dielectric plate having a through-hole at an outer peripheral portion thereof and having a substrate support on which a substrate is placed; a support member; a first heat insulating member disposed between the dielectric plate and the support member; a first biasing member disposed between the first heat insulating member and the support member, and a fastening member configured to detachably fix the dielectric plate to the support member by way of penetrating through the through-hole of the dielectric plate, the first heat insulating member, and the first biasing member.

Abstract: A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.

Abstract: There is provided a stage mechanism, including: an electrostatic chuck having a conductive film formed on a front surface thereof, the conductive film configured to make electrically contact with a rear surface of a substrate; a conductive member electrically connected to the conductive film and formed to extend to a rear surface of the electrostatic chuck; and a moving member electrically connected to the conductive member via a connecting member and configured to move between a first position connected to a ground potential and a second position not connected to the ground potential.

Abstract: Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.

Abstract: A sputtering apparatus includes: a target disposed on a ceiling of a processing container capable of being depressurized; a gas inlet configured to supply a sputtering gas into the processing container; a first shield disposed around the target and configured to prevent deposition of a film around the target; and a second shield disposed in the processing container to cover an inner wall of the ceiling with a space from the ceiling, and including an opening in a portion corresponding to the target.

Abstract: The sputter device according to one embodiment of the present invention has: a treatment vessel in which a substrate is housed; a slit plate which is disposed above the substrate inside the treatment vessel so as to be located parallel to a surface of the substrate and which has formed therein an opening that penetrates in the plate-thickness direction; and a heat-receiving plate which is formed of a material having a higher heat resistance than the slit plate and which is placed on top of the slit plate beneath a target material provided at a slant with respect the slit plate.

Abstract: A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

Abstract: A substrate processing apparatus includes a supporting table having a mounting region for a substrate. A rotation shaft supporting a shutter extends in a vertical direction. The shutter is moved between a first region above the supporting table and a second region by rotating the rotation shaft about its central axis. The shutter includes a pipe having gas output holes. When the shutter is disposed in the first region, the gas output holes are located outside the mounting region in a rotation direction from the second region toward the first region. The minimum distance between the central axis and the gas output holes is smaller than or equal to the minimum distance between the central axis and the mounting region. The maximum distance between the central axis and the gas output holes is greater than equal to the maximum distance between the central axis and the mounting region.

Abstract: A sputtering apparatus includes: a target disposed on a ceiling of a processing container capable of being depressurized; a gas inlet configured to supply a sputtering gas into the processing container; a first shield disposed around the target and configured to prevent deposition of a film around the target; and a second shield disposed in the processing container to cover an inner wall of the ceiling with a space from the ceiling, and including an opening in a portion corresponding to the target.

Abstract: There is provided a stage mechanism, including: an electrostatic chuck having a conductive film formed on a front surface thereof, the conductive film configured to make electrically contact with a rear surface of a substrate; a conductive member electrically connected to the conductive film and formed to extend to a rear surface of the electrostatic chuck; and a moving member electrically connected to the conductive member via a connecting member and configured to move between a first position connected to a ground potential and a second position not connected to the ground potential.

Abstract: A substrate stage includes: a shaft rotatably disposed with respect to a bottom surface of a processing container; a base provided on the shaft; and a horizontal mover attached to the base and configured to move a substrate in the processing container in a horizontal direction with respect to the bottom surface.

Abstract: A sputtering device includes a processing chamber where a substrate is accommodated, and a slit plate that partitions the processing chamber into a first space where a target member is disposed and a second space where the substrate is disposed. The slit plate includes an inner member having an opening that penetrates therethrough in a thickness direction of the slit plate, and an outer member disposed around the inner member. The inner member is attachable to and detachable from the outer member.