Abstract: Provided is a synchronous clock generation apparatus which comprises a multiplier for multiplying a horizontal synchronizing signal by a horizontal synchronizing pulse signal to generate multiplication data, a gain variable digital LPF for extracting only DC components from the multiplication data and capable of performing gain adjustment, and a controller for calculating gain adjustment data, lock center frequency setting data, and LPF gain adjustment data on the basis of the correction data, and which detects an amount of deviation from the lock center frequency and an amount of variation, and displaces the lock center frequency and shifts the lock range along the frequency axis to enlarge the apparent lock range when the amount of deviation is large, and reduces the gain to improve lock precision when the amount of variation is small, without expanding bits in the circuit configuration.

Abstract: The present invention provides a semiconductor inspection method which detects a short circuit failure of adjacent lines having the possibility of a short circuit occurring, which short circuit failure cannot be detected by the conventional semiconductor inspection methods. The semiconductor inspection method comprises steps of: extracting adjacent lines having the possibility of a short circuit occurring between the lines from a layout patter of a semiconductor (step S101), obtaining input logical values such that one of the adjacent lines has a logical value “1” while the other has a logical value “0” (step S102), and monitoring outputs of a logical circuit which receives the input logical values, thereby to compare the outputs with output logical values which are expected when the input logical values are input to the logical circuit (step S103). Therefore, the short circuit failure of the adjacent lines in the logical circuit can be correctly detected in a short time.

Abstract: A semiconductor device that generates a clock which is synchronized with a reference signal stably and with fixed synchronization accuracy, and enables to deal with an abrupt variation in the reference signal. This semiconductor device includes N stages of delay elements each delaying an external clock by 1/N clock (N: an integer that is two or larger); a phase comparator for comparing the phase of a clock that has been delayed by the N stages of the delay elements with the phase of the external clock one clock late; a controller that receives a phase difference detected by the phase comparator and controls respective delays of the delay elements; and a selector for selecting a delayed clock having the closest phase to the reference signal from delayed clocks which are generated by the N stages of the delay elements, respectively, and shifted in phase with each other by 1/N clock.

Abstract: Provided are a hexagonal boron nitride film having a specific inductance of 3.0 or less, a hexagonal boron nitride film wherein the total content of the bonds between a nitrogen atom and a hydrogen atom and between a boron atom and a hydrogen atom is 4 mol % or less, a hexagonal boron nitride film in which a spacing in the c-axis direction is extended by 5 to 30% but the extension of a spacing in the a-axis direction is limited within 5% and a hexagonal boron nitride film in which the direction of the c-axis is parallel to a substrate. There is also provided a layer dielectric film using each of these hexagonal boron nitride films. Also, there is also provided a method of producing a hexagonal boron nitride film by using an ion deposition method.

Abstract: The present invention provides a semiconductor device that generates a clock which is synchronized with a reference signal stably and with fixed synchronization accuracy, and enables to deal with an abrupt variation in the reference signal. This semiconductor device includes N stages of delay elements each delaying an external clock by 1/N clock (N: an integer that is two or larger); a phase comparator for comparing the phase of a clock that has been delayed by the N stages of the delay elements with the phase of the external clock one clock late; a controller that receives a phase difference detected by the phase comparator and controls respective delays of the delay elements; and a selector for selecting a delayed clock having the closest phase to the reference signal from delayed clocks which are generated by the N stages of the delay elements, respectively, and shifted in phase with each other by 1/N clock.

Abstract: Disclosed are novel N-oxyl compounds of the following formula (1). wherein n is an integer of 1 to 18; R1 and R2 are each hydrogen or methyl, but at least one of them is hydrogen; R3, R4, R5 and R6 are each a straight-chain or branched alkyl group; and R7 is hydrogen or (meth)acryloyl. When these compounds are added to vinyl monomers such as &agr;,&bgr;-unsaturated carboxylic acids and esters thereof, they exhibit a satisfactory polymerization-inhibiting effect even at low contents and even at elevated temperatures.

Abstract: Provided are a hexagonal boron nitride film having a specific inductance of 3.0 or less, a hexagonal boron nitride film wherein the total content of the bonds between a nitrogen atom and a hydrogen atom and between a boron atom and a hydrogen atom is 4 mol % or less, a hexagonal boron nitride film in which a spacing in the c-axis direction is extended by 5 to 30% but the extension of a spacing in the a-axis direction is limited within 5% and a hexagonal boron nitride film in which the direction of the c-axis is parallel to a substrate. There is also provided a layer dielectric film using each of these hexagonal boron nitride films. Also, there is also provided a method of producing a hexagonal boron nitride film by using an ion deposition method.

Abstract: A cassette has supply and take up reels with corresponding annular gears thereon. A pivotally mounted driving brake arm has an intermediately positioned pawl engaging the take up reel gear. An end of the driving brake arm is spaced from a coacting end of a pivotally mounted driven brake arm. An opposite end of the driven brake arm has a pawl for engaging the gear of the supply reel. When the tape is slack, the tape up reel incrementally rotates to tighten it, causing the take up reel pawl to incremental ratchet over the mating gear. This causes the driving arm to rotate and displace its end into abutting relation with the coacting end of the driven arm. Consequently, the ratchet of the driven brake arm rotates and its corresponding pawl disengages from the supply reel gear to allow the supply reel to incrementally pay out a length of tape sufficient to prevent overtightening.

Abstract: A process for preparing a methacrylic acid ester by reacting methacrylic acid with a lower aliphatic alcohol in the liquid phase using a solid acid catalyst at a molar ratio of alcohol to methacrylic acid of 1.2-3.0 and a reaction temperature of 70.degree.-100.degree. C. is improved by(1) extracting the unreacted alcohol from the reaction mixture with an aqueous solvent at a temperature of 25.degree. to 70.degree. C.,(2) removing the low boiling substances from the extraction residual mixture by distillation, whereby an organic residue is generated containing methacrylic acid ester and unreacted methacrylic acid, and(3) separating the unreacted methacrylic acid and the methacrylic acid ester by distillation.

Abstract: The gas phase catalytic oxidation of an unsaturated aldehyde with molecular oxygen at 240.degree. to 390.degree. C to give the corresponding unsaturated carboxylic acid is conducted in the presence of a catalyst represented by the following formula:P.sub.a Mo.sub.b As.sub.c X.sub.d Y.sub.e Z.sub.f O.sub.gwherein a, b, c, d, e, f and g represent the atomic ratio of each component and a is 0.03 to 0.2, b is 1, c is 0.015 to 0.15, d is 0.003 to 1, e is 0.003 to 0.417, f is 0.003 to 1, and g is a value determined by the valencies of the elements present in the catalyst; and wherein X is copper, vanadium or mixtures thereof Y is at least one alkali metal selected from the group consisting of lithium, sodium, potassium, rubidium and cesium, and Z is at least one metal selected from the group consisting of magnesium, aluminum, calcium, titanium, zirconium, silver, antimony, tellurium, barium, tantalum and silicon.

Abstract: The gas phase catalytic oxidation of an unsaturated aldehyde with molecular oxygen at 240.degree. to 390.degree. C to give the corresponding unsaturated carboxylic acid is conducted in the presence of a catalyst represented by the following formula:P.sub.a Mo.sub.b As.sub.c (NH.sub.4).sub.d X.sub.e Y.sub.f O.sub.gwherein a, b, c, e, f and g represent the atomic ratio of each component and a is 0.03 to 0.2, b is 1, c is 0.015 to 0.15, e is 0.003 to 1, f is 0 to 0.17, g is a value determined by the valencies of the elements present in the catalyst, and d designates the number of ammonium groups which are within the range of 0.01 to 0.3, and wherein X is at least one metal selected from the group consisting of vanadium, tungsten, copper, iron, manganese and tin, and Y is at least one alkali metal element selected from the group consisting of lithium, sodium, potassium, rubidium and cesium.