Patents by Inventor Hiroshi Sudoh

Hiroshi Sudoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220127292
    Abstract: To provide a method for producing an amidinate metal complex which is represented by [R1—N—C(R3)—N—R2]nM in cost saving and simple manner. A method for producing an amidinate metal complex represented by [R1—N—C(R3)—N—R2]nM including: a first step in which R3X is reacted with a metal Li in a solvent to obtain R3Li solution with LiX suspended therein; a second step in which the R3Li solution with LiX existing therein is reacted with R1—N?C?N—R2 to obtain a [R1—N—C(R3)—N—R2]Li solution with the LiX suspended therein; a third step in which the [R1—N—C(R3)—N—R2]Li solution with the LiX existing therein is reacted with MX to obtain an amidinate metal complex solution, represented by the [R1—N—C(R3)—N—R2]nM, with the LiX suspended therein; and a fourth step for removing the LiX in the solution obtained by the third step.
    Type: Application
    Filed: June 21, 2021
    Publication date: April 28, 2022
    Applicant: GAS-PHASE GROWTH LTD.
    Inventors: Hideaki MACHIDA, Masato ISHIKAWA, Hiroshi SUDOH
  • Publication number: 20200331944
    Abstract: A purpose of the invention is to provide a novel compound. The novel compound is represented by M[i-C3H7NC(R)N-i-C3H7]2 (where, M=Co or Fe; R=n-C3H7 or i-C3H7) that is a liquid under 25° C. (at 1 atmospheric pressure).
    Type: Application
    Filed: March 30, 2020
    Publication date: October 22, 2020
    Applicant: GAS-PHASE GROWTH LTD.
    Inventors: Hideaki MACHIDA, Masato ISHIKAWA, Hiroshi SUDOH
  • Patent number: 9428835
    Abstract: A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: August 30, 2016
    Assignees: GAS-PHASE GROWTH LTD., Tokyo Electron Limited
    Inventors: Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yumiko Kawano, Kazutoshi Iwai
  • Publication number: 20150211100
    Abstract: The present invention is directed to a method for forming a copper-based film on a substrate in supercritical fluid, wherein (N,N?-Diisopropylpropion amidinate) copper dimer is dissolved in supercritical fluid and copper is deposited on the substrate to form the copper-based film thereon.
    Type: Application
    Filed: November 12, 2014
    Publication date: July 30, 2015
    Applicant: GAS-PHASE GROWTH LTD.
    Inventors: Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Eiichi Kondoh
  • Publication number: 20140248427
    Abstract: A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.
    Type: Application
    Filed: October 4, 2012
    Publication date: September 4, 2014
    Applicants: Tokyo Electron Limited, GAS-PHASE GROWTH LTD.
    Inventors: Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yumiko Kawano, Kazutoshi Iwai
  • Patent number: 7688483
    Abstract: A document reading apparatus including: a first scanning section that moves in a scanning direction along a document surface, for supporting a first mirror to reflect an image of a document in a direction parallel to the scanning direction; an intermediate scanning section that moves synchronous with the first scanning section, for supporting an intermediate mirror to reflect the image of the document reflected by the first mirror in a direction opposite from an incident direction of the image; a reading section including an imaging sensor for reading the image of a scanned document and a focusing lens for focusing the image of the document reflected by the intermediate mirror on the imaging sensor; a driving wire for pulling the first scanning section in the scanning direction; a supporting pulley for supporting the driving wire at a starting side for scanning or at an ending side for scanning; a position adjustment section capable of adjusting a position of the supporting pulley in its axial direction; a co
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: March 30, 2010
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tomohiko Okada, Yasuhiro Suto, Shohichi Fukutome, Kenji Tanaka, Mitsuharu Yoshimoto, Hisashi Yamanaka, Kenji Nakanishi, Noritomo Nakashima, Yoshikazu Fukuda, Hiroshi Sudoh, Yutaka Fukuda
  • Publication number: 20080024839
    Abstract: A document reading apparatus including: a first scanning section that moves in a scanning direction along a document surface, for supporting a first mirror to reflect an image of a document in a direction parallel to the scanning direction; an intermediate scanning section that moves synchronous with the first scanning section, for supporting an intermediate mirror to reflect the image of the document reflected by the first mirror in a direction opposite from an incident direction of the image; a reading section including an imaging sensor for reading the image of a scanned document and a focusing lens for focusing the image of the document reflected by the intermediate mirror on the imaging sensor; a driving wire for pulling the first scanning section in the scanning direction; a supporting pulley for supporting the driving wire at a starting side for scanning or at an ending side for scanning; a position adjustment section capable of adjusting a position of the supporting pulley in its axial direction; a co
    Type: Application
    Filed: July 27, 2007
    Publication date: January 31, 2008
    Inventors: Tomohiko OKADA, Yasuhiro Suto, Shohichi Fukutoma, Kenji Tanaka, Mitsuharu Yoshimoto, Hisashi Yamanaka, Kenji Nakanishi, Noritomo Nakashima, Yoshikazu Fukuda, Hiroshi Sudoh, Yutaka Fukuda