Abstract: A platform scale is provided including a plurality of component force damping devices. The platform scale for weighing an object by supporting a support member that supports the object by a plurality of load detection units includes at least four component force damping devices, each comprising a plurality of needle bearings disposed in parallel and a pair of opposed plates for sandwiching the the needle bearings, so that the pair of plates make a relative movement in a direction of the arrangement of the needle bearings. The four component force damping devices are in contact with the support member at four locations that form a rectangle. Directions of the relative movement of any two component force damping devices located at the same side of the rectangle are different, while directions of the relative movement of any two component force damping devices at diagonal locations of the rectangle are identical.

Abstract: The present invention is to provide a platform scale including a plurality of component force damping devices assembled therein for making high precision weighing. The platform scale for weighing an object to be weighed by supporting a support member that supports the object to be weighed by a plurality of load detection units 301,302 includes at least four component force damping devices 321˜324, each comprising an arrangement of a plurality of needle bearings disposed in parallel and a pair of opposed plates for sandwiching the arrangement of the needle bearings 63 so that the pair of plates make a relative movement in a direction of the arrangement of the needle bearings. The four component force damping devices 321˜324 are in contact with the support member at four locations that form a rectangle.

Abstract: A multilayer interconnect structure for a semiconductor device. The structure comprises a lower patterned metallization layer, a higher patterned metallization layer, and filled holes for electrically interconnecting these two layers. The two metallization layers are formed out of aluminum or an aluminum alloy by high-temperature aluminum sputtering or aluminum reflow techniques. A suction-preventing layer is formed either at the bottoms of the contact holes or on the surface of the lower metallization layer to prevent the material of the lower metallization layer from being sucked into the overlying contact holes.