Abstract: In a meter rate fees charging apparatus and method for charging a meter rate fee to a sender by amount of use of a network, it is designed such that charging processing means charges the sender based on zone information contained in transmission information communicated between the sender and the recipient. And, in a meter rate fees charging apparatus and method to charge each user a meter rate fee by amount of use of a network, it is designed such that charging means charges the recipient a meter rate fee obtained based on communication information only in the case where the sender is not prohibited from using the network.

Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

Abstract: The front-end module is composed of a multilayer substrate and surface-mounted components. The front end module constitutes antenna switches, filters, and a high frequency circuit comprising a band splitter circuit as well as the front end of the transceiver circuit equipped with a plurality of transmission/reception features whose communications systems are different. The multilayer substrate arranges a band splitter circuit pattern at the center in the plane direction and symmetrically arranges a plurality of antenna switch conductor patterns whose communications systems are different, with respect to the pattern for the band splitter circuit.

Abstract: A network 3 is used to connect a terminal (5) of a customer (9), a member store server (7) and a service provision server (8) of a member store (11), and a service surrogate server (13) with each other. An administrator of the member store (11) accesses the service surrogate server (13) to enter a reservation target resource, etc. The reservation target resource etc. are registered to the service surrogate server (13). The service surrogate server (13) also generates a time-based reservation screen (607). When the customer (9) applies for a reservation via the member store (11), the time-based reservation screen (607) is displayed. The customer (9) uses the time-based reservation screen (607) to make a reservation. Consequently, the present invention can provide a surrogate system etc. without necessitating the member store etc. to build a reservation system etc. for electronic business transaction using the Internet, etc.

Abstract: In a meter rate fees charging apparatus and method for charging a meter rate fee to a sender by amount of use of a network, it is designed such that charging processing means charges the sender based on zone information contained in transmission information communicated between the sender and the recipient. And, in a meter rate fees charging apparatus and method to charge each user a meter rate fee by amount of use of a network, it is designed such that charging means charges the recipient a meter rate fee obtained based on communication information only in the case where the sender is not prohibited from using the network.

Abstract: In the present invention, an IP address of a communication party is detected by analysing flow information of communication carried out by the user, and in case the IP address of the communication party is an IP address registered in advance by the user, the communication charge appropriate to the communication carried out by the user is calculated in the discount charge form. Further, in case the communication party is a communication party registered in a group of the user, the communication charge carried out by the user is calculated using the discount charge form different from the standard communication charge.

Abstract: The front-end module is composed of a multilayer substrate and surface-mounted components. The front end module constitutes antenna switches, filters, and a high frequency circuit comprising a band splitter circuit as well as the front end of the transceiver circuit equipped with a plurality of transmission/reception features whose communications systems are different. The multilayer substrate arranges a band splitter circuit pattern at the center in the plane direction and symmetrically arranges a plurality of antenna switch conductor patterns whose communications systems are different, with respect to the pattern for the band splitter circuit.

Abstract: A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

Abstract: A ultra-high density memory device utilizing a photoinductive ferromagnetic thin film. A photoinductive ferromagnetic thin film is formed on a GaAs substrate, and a tip is arranged so as to face the photoinductive ferromagnetic thin film. The GaAs substrate is disposed on an xyz scanner, and the three-dimensional positional relationship between the GaAs substrate and the tip is changed by the xyz scanner. Blue light is radiated onto the thin film in order to make the magnetization orientation of molecules uniform. Through application of a relatively high voltage, a relatively large current is caused to flow between the tip and the substrate, so that randomization of the magnetization orientation of molecules of the photoinductive ferromagnetic thin film; i.e., writing operation is carried out.

Abstract: A static induction type semiconductor device of a surface gate type, includes a source region, gate region and drain region. A channel region is formed between the drain region and the source region, such that when a bias potential is applied between the gate region and the source region, carriers flow to the drain region from the source region via the channel region. A source electrode is provided on the semiconductor layer. A source contact region is provided between the source electrode and the source region to establish electrical connection therebetween. The source contact region is segmented into a plurality of smaller regions or sections whose total area is smaller than the area of the corresponding portion of the source region, for improving the current gain, and for preventing or significantly reducing local current concentration.

Abstract: Disclosed is an improvement of a static induction type semiconductor device which includes an anode region provided at one surface portion of a semiconductor substrate, a cathode region provided on the other surface portion, a gate region adjacent to the cathode region and a low impurity density region formed at an intermediate portion of the semiconductor substrate. A cathode short region is provided at a position opposite to the cathode region with the gate region therebetween so as to be conducted to the cathode region, thereby quickening the injection of charge at the time of turn-on and draw up of charge at the time of turn-off, and enabling high-speed on and off operation.

Abstract: A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.

Abstract: A semiconductor device comprises two main electrode regions, i.e., cathode and anode regions consisting of high impurity concentration regions of opposite conductivity types, a low impurity concentration region locally formed between the two main electrode regions, a gate region, formed near the cathode region, for controlling a main current, a first local region which has a relatively low carrier lifetime and is formed in a region of the low impurity concentration region near at least one of the gate and cathode regions, and a second local region which has a relatively low carrier lifetime and is formed in a region of the low impurity concentration region which is depleted at the end of the main current turn-off process or which is not depleted to the end, thus satisfying three conditions, i.e., high-speed switching, low forward voltage drop, and high blocking voltage between the main electrodes at the same time.