Patents by Inventor Hiroshi Takakusagi
Hiroshi Takakusagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11355658Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.Type: GrantFiled: May 11, 2020Date of Patent: June 7, 2022Assignee: CANON KABUSHIKI KAISHAInventors: Toshihiro Shoyama, Hiroshi Takakusagi, Yasuo Yamazaki, Hideaki Ishino, Toshiyuki Ogawa
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Publication number: 20200274006Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.Type: ApplicationFiled: May 11, 2020Publication date: August 27, 2020Inventors: Toshihiro Shoyama, Hiroshi Takakusagi, Yasuo Yamazaki, Hideaki Ishino, Toshiyuki Ogawa
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Patent number: 10693023Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.Type: GrantFiled: June 1, 2016Date of Patent: June 23, 2020Assignee: CANON KABUSHIKI KAISHAInventors: Toshihiro Shoyama, Hiroshi Takakusagi, Yasuo Yamazaki, Hideaki Ishino, Toshiyuki Ogawa
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Patent number: 10340400Abstract: A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1×1018 [atoms/cm3] and not more than 1×1020 [atoms/cm3], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration.Type: GrantFiled: November 29, 2017Date of Patent: July 2, 2019Assignee: CANON KABUSHIKI KAISHAInventors: Toshihiro Shoyama, Hiroshi Takakusagi, Tasuku Kaneda, Toshiyuki Ogawa
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Publication number: 20180166591Abstract: A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1×1018 [atoms/cm3] and not more than 1×1020 [atoms/cm3], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration.Type: ApplicationFiled: November 29, 2017Publication date: June 14, 2018Inventors: Toshihiro Shoyama, Hiroshi Takakusagi, Tasuku Kaneda, Toshiyuki Ogawa
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Patent number: 9871072Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.Type: GrantFiled: May 26, 2016Date of Patent: January 16, 2018Assignee: Canon Kabushiki KaishaInventors: Akihiro Kawano, Yukinobu Suzuki, Nobutaka Ukigaya, Takayasu Kanesada, Takeshi Aoki, Hiroshi Takakusagi
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Publication number: 20160365462Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.Type: ApplicationFiled: June 1, 2016Publication date: December 15, 2016Inventors: Toshihiro Shoyama, Hiroshi Takakusagi, Yasuo Yamazaki, Hideaki Ishino, Toshiyuki Ogawa
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Publication number: 20160353044Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.Type: ApplicationFiled: May 26, 2016Publication date: December 1, 2016Inventors: Akihiro Kawano, Yukinobu Suzuki, Nobutaka Ukigaya, Takayasu Kanesada, Takeshi Aoki, Hiroshi Takakusagi
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Publication number: 20160172413Abstract: A solid-state imaging apparatus, comprising a plurality of pixels arrayed on a substrate, and element isolation regions formed between the plurality of pixels on the substrate, wherein the plurality of pixels include a first pixel including a first color filter for passing light having a first wavelength, a second pixel including a second color filter for passing light having a second wavelength longer than the first wavelength, and a pixel for focus detection including a light-shielding pattern arranged on the photoelectric conversion portion to limit light entering the photoelectric conversion portion, and among the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is lower than that of a second region between the first pixel and the second pixel.Type: ApplicationFiled: February 25, 2016Publication date: June 16, 2016Inventor: Hiroshi Takakusagi
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Patent number: 9357186Abstract: A solid-state imaging apparatus, comprising a plurality of pixels respectively including photoelectric conversion portions arranged on a semiconductor substrate, wherein the plurality of pixels include pixels for imaging arranged according to a Bayer array and pixels for focus detection each having a light-shielding portion with an opening, and the opening of the light-shielding portion of a first pixel for focus detection arranged in a position where a red pixel of the Bayer array is to be arranged is made larger than that of a second pixel for focus detection arranged in a position where a blue pixel of the Bayer array is to be arranged.Type: GrantFiled: April 2, 2014Date of Patent: May 31, 2016Assignee: Canon Kabushiki KaishaInventor: Hiroshi Takakusagi
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Patent number: 9305950Abstract: A solid-state imaging apparatus, comprising a plurality of pixels arrayed on a substrate, and element isolation regions formed between the plurality of pixels on the substrate, wherein the plurality of pixels include a first pixel including a first color filter for passing light having a first wavelength, a second pixel including a second color filter for passing light having a second wavelength longer than the first wavelength, and a pixel for focus detection including a light-shielding pattern arranged on the photoelectric conversion portion to limit light entering the photoelectric conversion portion, and among the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is lower than that of a second region between the first pixel and the second pixel.Type: GrantFiled: March 14, 2014Date of Patent: April 5, 2016Assignee: Canon Kabushiki KaishaInventor: Hiroshi Takakusagi
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Patent number: 9086577Abstract: A solid-state imaging apparatus, comprising a plurality of pixels arranged on a substrate, and element isolation regions formed between the plurality of pixels on the substrate, wherein the plurality of pixels include a first pixel including a first color filter for passing light having a first wavelength, a second pixel including a second color filter for passing light having a second wavelength shorter than the first wavelength, and a pixel for focus detection into which light longer than at least the second wavelength enters, and of the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is higher than that of a second region between the first pixel and the second pixel.Type: GrantFiled: March 12, 2014Date of Patent: July 21, 2015Assignee: Canon Kabushiki KaishaInventor: Hiroshi Takakusagi
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Publication number: 20140327798Abstract: A solid-state imaging apparatus, comprising a plurality of pixels respectively including photoelectric conversion portions arranged on a semiconductor substrate, wherein the plurality of pixels include pixels for imaging arranged according to a Bayer array and pixels for focus detection each having a light-shielding portion with an opening, and the opening of the light-shielding portion of a first pixel for focus detection arranged in a position where a red pixel of the Bayer array is to be arranged is made larger than that of a second pixel for focus detection arranged in a position where a blue pixel of the Bayer array is to be arranged.Type: ApplicationFiled: April 2, 2014Publication date: November 6, 2014Applicant: CANON KABUSHIKI KAISHAInventor: Hiroshi Takakusagi
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Publication number: 20140285701Abstract: A solid-state imaging apparatus, comprising a plurality of pixels arranged on a substrate, and element isolation regions formed between the plurality of pixels on the substrate, wherein the plurality of pixels include a first pixel including a first color filter for passing light having a first wavelength, a second pixel including a second color filter for passing light having a second wavelength shorter than the first wavelength, and a pixel for focus detection into which light longer than at least the second wavelength enters, and of the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is higher than that of a second region between the first pixel and the second pixel.Type: ApplicationFiled: March 12, 2014Publication date: September 25, 2014Applicant: CANON KABUSHIKI KAISHAInventor: Hiroshi Takakusagi
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Publication number: 20140285694Abstract: A solid-state imaging apparatus, comprising a plurality of pixels arrayed on a substrate, and element isolation regions formed between the plurality of pixels on the substrate, wherein the plurality of pixels include a first pixel including a first color filter for passing light having a first wavelength, a second pixel including a second color filter for passing light having a second wavelength longer than the first wavelength, and a pixel for focus detection including a light-shielding pattern arranged on the photoelectric conversion portion to limit light entering the photoelectric conversion portion, and among the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is lower than that of a second region between the first pixel and the second pixel.Type: ApplicationFiled: March 14, 2014Publication date: September 25, 2014Applicant: CANON KABUSHIKI KAISHAInventor: Hiroshi Takakusagi
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Patent number: 6888488Abstract: An A/D converter includes a plurality of comparators, each of which samples an analog input potential during a first period, and compares the analog input potential with a reference potential during a second period, an encoder which encodes comparison results obtained by the comparators, and a control signal supply unit which generates one or more control signals that define the first period and the second period such as to make a duration of the first period different from a duration of the send period, and supplies the one or more control signals to the plurality of comparators.Type: GrantFiled: November 27, 2002Date of Patent: May 3, 2005Assignee: Fujitsu LimitedInventors: Hiroshi Takakusagi, Toshitaka Mizuguchi, Chikara Tsuchiya, Katsuyosi Yamamoto
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Publication number: 20030112169Abstract: An A/D converter includes a plurality of comparators, each of which samples an analog input potential during a first period, and compares the analog input potential with a reference potential during a second period, an encoder which encodes comparison results obtained by the comparators, and a control signal supply unit which generates one or more control signals that define the first period and the second period such as to make a duration of the first period different from a duration of the send period, and supplies the one or more control signals to the plurality of comparators.Type: ApplicationFiled: November 27, 2002Publication date: June 19, 2003Applicant: Fujitsu LimitedInventors: Hiroshi Takakusagi, Toshitaka Mizuguchi, Chikara Tsuchiya, Katsuyosi Yamamoto