Abstract: A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb2O5 powder, a K2CO3 powder, and a Na2Co3 powder, pulverizing the mixed powder to achieve a grain size d50 of 100 ?m or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm2. A high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method is provided.

Abstract: A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb2O5 powder, a K2Co3 powder, and a Na2Co3 powder, pulverizing the mixed powder to achieve a grain size d50 of 100 ?m or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm2. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.

Abstract: Provided is a multi-shank heater to be mounted on a support substrate, wherein, with a normal direction relative to the support substrate, which is a direction from the heater side toward the support substrate side, as a basis, the multi-shank heater has U-shaped pieces in which an angle ? of a planar direction of the U-shaped pieces, which is a direction from the heater side toward the support substrate side, is ±10° or more and ±60° or less. An object of the present invention is to provide a multi-shank heater capable of considerably improving the energy output even when the U-shaped pieces are arranged in a high density and have the same pitch.

Abstract: A sputtering target-backing plate assembly obtained by bonding a sputtering target and a backing plate using a brazing material, wherein a braze bonding layer which bonds the sputtering target and the backing plate contains a material having thermal conductivity that is higher than that of the brazing material in an amount of 5 vol % or more and 50 vol % or less, and a thickness of the braze bonding layer is 100 ?m or more and 700 ?m or less. An object is to prevent the seepage of the brazing material while maintaining the thickness of the braze bonding layer.

Abstract: A sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the brazing material has a melting point of 200° C. or higher and a bonding strength of 0.16 kgf/cm2 or higher. An object is to provide a sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the sputtering target-backing plate assembly has a high bonding strength and is free from separation even under high temperature sputtering conditions such as during high power sputtering.

Abstract: [The present invention is] a dart game apparatus that provides a dart game in which one player successively throws n number of (n=3 or 4) darts D at a dart board 12, having: light sources LS that are disposed around the dart board 12 and emit lights L along the board face of the dart board 12; a plurality of photo-sensors S that are disposed around the dart board 12 at approximately the same height from the dart board 12 in the board thickness direction, and detect the brightness of the lights L emitted from the light sources LS; and a processor that calculates a hit position of a dart D in the dart board 12 based on the brightness of each light. A number of photo-sensors S is n×2.

Abstract: Provided is a multi-shank heater to be mounted on a support substrate, wherein, with a normal direction relative to the support substrate, which is a direction from the heater side toward the support substrate side, as a basis, the multi-shank heater has U-shaped pieces in which an angle ? of a planar direction of the U-shaped pieces, which is a direction from the heater side toward the support substrate side, is ±10° or more and ±60° or less. An object of the present invention is to provide a multi-shank heater capable of considerably improving the energy output even when the U-shaped pieces are arranged in a high density and have the same pitch.

Abstract: A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb2O5 powder, a K2Co3 powder, and a Na2Co3 powder, pulverizing the mixed powder to achieve a grain size d50 of 100 ?m or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm2. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.

Abstract: A sputtering target-backing plate assembly obtained by bonding a sputtering target and a backing plate using a brazing material, wherein a braze bonding layer which bonds the sputtering target and the backing plate contains a material having thermal conductivity that is higher than that of the brazing material in an amount of 5 vol % or more and 50 vol % or less, and a thickness of the braze bonding layer is 100 ?m or more and 700 ?m or less. An object is to prevent the seepage of the brazing material while maintaining the thickness of the braze bonding layer.

Abstract: A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics.

Abstract: [The present invention is] a dart game apparatus that provides a dart game in which one player successively throws n number of (n=3 or 4) darts D at a dart board 12, having: light sources LS that are disposed around the dart board 12 and emit lights L along the board face of the dart board 12; a plurality of photo-sensors S that are disposed around the dart board 12 at approximately the same height from the dart board 12 in the board thickness direction, and detect the brightness of the lights L emitted from the light sources LS; and a processor that calculates a hit position of a dart D in the dart board 12 based on the brightness of each light. A number of photo-sensors S is n×2.

Abstract: Provided is a backing plate obtaining by bonding an anticorrosive metal and Mo or a Mo alloy, wherein the backing plate comprises, on a surface of the Mo or Mo alloy backing plate to be cooled (cooling surface side), a layer having a thickness corresponding to 1/40 to ? of a total thickness of the backing plate and formed from an anticorrosive metal obtained by bonding one or more types of metals selected from among Cu, Al and Ti, or an alloy thereof. Additionally provided is a sputtering target-backing plate assembly obtained by bonding the foregoing Mo or Mo alloy backing plate and a target formed from a low thermal expansion material. Particularly in semiconductor applications, reductions in size have progressed and control of particles during sputtering has become stricter. The present invention aims to resolve the problem of warpage of sputtering targets formed from low thermal expansion materials and problems occurring with respect to the anticorrosive properties of Mo or Mo alloy backing plates.

Abstract: A sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the brazing material has a melting point of 200° C. or higher and a bonding strength of 0.16 kgf/cm2 or higher. An object is to provide a sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the sputtering target-backing plate assembly has a high bonding strength and is free from separation even under high temperature sputtering conditions such as during high power sputtering.

Abstract: A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics.

Abstract: Provided is a polycrystalline silicon target produced by a melting method. In the polycrystalline silicon sputtering target, the average amount of nitride or carbide grains having a size of 100 ?m or more for samples of 100×100 mm taken from an arbitrary plane of the target is less than three. Also provided is a method of producing a polycrystalline silicon sputtering target. The method is characterized in that a silicon ingot is produced by melting silicon as a raw material with an electron beam and pouring the molten silicon into a crucible heated at 90° C. or more, and the resulting ingot is machined into a target. The present invention has focused on polycrystalline silicon produced by a melting method, and an object of the present invention is to provide a polycrystalline silicon sputtering target having high quality by reducing the presence of silicon nitride and silicon carbide and to provide a polycrystalline silicon sputtering target having a high bending strength by devising the production process.

Abstract: Provided is a backing plate obtaining by bonding an anticorrosive metal and Mo or a Mo alloy, wherein the backing plate comprises, on a surface of the Mo or Mo alloy backing plate to be cooled (cooling surface side), a layer having a thickness corresponding to 1/40 to ? of a total thickness of the backing plate and formed from an anticorrosive metal obtained by bonding one or more types of metals selected from among Cu, Al and Ti, or an alloy thereof. Additionally provided is a sputtering target-backing plate assembly obtained by bonding the foregoing Mo or Mo alloy backing plate and a target formed from a low thermal expansion material. Particularly in semiconductor applications, reductions in size have progressed and control of particles during sputtering has become stricter. The present invention aims to resolve the problem of warpage of sputtering targets formed from low thermal expansion materials and problems occurring with respect to the anticorrosive properties of Mo or Mo alloy backing plates.

Abstract: The purpose of the present invention is to provide an In—Cu alloy sputtering target member having high compositional homogeneity in the thickness direction. The present invention provides a sputtering target member having a composition containing from 1 to 70 at. % of Cu relative to a total number of atoms of In and Cu, the balance being In and inevitable impurities, wherein the target member fulfills 0.95?A/B?1, where A represents a Cu atomic concentration relative to the total number of atoms of In and Cu in one half of a thickness direction; B represents a Cu atomic concentration relative to the total number of atoms of In and Cu in the other half of the thickness direction; and B?A; and wherein a number of pores having a size of 100 ?m or more is less than 10/cm2 on average.

Abstract: A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a depth of scratches on the polycrystalline silicon wafer is 10 ?m or less. A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a maximum number of scratches having a width of 40 ?m or more and 100 ?m or less and a depth of more than 10 ?m and 40 ?m or less formed on the polycrystalline silicon wafer is one or less per section when the overall polycrystalline silicon wafer is divided into 100 mm-square sections, and a depth of remaining scratches is 10 ?m or less. Provided is a large polycrystalline silicon wafer, particularly a silicon wafer having a wafer size in which the outer diameter is 450 mm or more, in which a small number of scratches are generated on the wafer surface and which has mechanical properties similar to those of a monocrystalline silicon wafer.

Abstract: A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a depth of scratches on the polycrystalline silicon wafer is 10 ?m or less. A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a maximum number of scratches having a width of 40 ?m or more and 100 ?m or less and a depth of more than 10 ?m and 40 ?m or less formed on the polycrystalline silicon wafer is one or less per section when the overall polycrystalline silicon wafer is divided into 100 mm-square sections, and a depth of remaining scratches is 10 ?m or less. Provided is a large polycrystalline silicon wafer, particularly a silicon wafer having a wafer size in which the outer diameter is 450 mm or more, in which a small number of scratches are generated on the wafer surface and which has mechanical properties similar to those of a monocrystalline silicon wafer.

Abstract: Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 ?m or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.