Abstract: A thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible to obtain a wurtzite thin film whose polarization directions of crystal grains are aligned in a uniform direction. There is provided a laminate including a first wurtzite crystalline layer made of a wurtzite crystalline structure compound is formed in advance between a substrate and a functional material layer that is a ground. Thus it is possible to improve the crystallinity and crystalline orientation of a second wurtzite crystalline layer on the functional material layer.

Abstract: A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film. A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.

Abstract: A stacked structure (1) includes an electrostriction layer (2) including an electric inductive distortion material and a stress light-emitting layer (3) including a stress light-emitting material. When applying a voltage to the electrostriction layer (2) in the stacked structure (1), the electric inductive distortion material deforms, thereby the electrostriction layer (2) deforms. The deformation of the electrostriction layer (2) causes an external force to act on the stress light-emitting material of the stress light-emitting layer (3), and the stress light-emitting layer (3) emits light, accordingly. That is, by applying the voltage to the stacked structure (1), the stacked structure (1) can emit the light.

Abstract: The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.

Abstract: According to the present invention, a thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or an oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible to obtain a wurtzite thin film whose polarization directions of crystal grains are aligned in a uniform direction. According to a laminate of the present invention, a first wurtzite crystalline layer made of a wurtzite crystalline structure compound is formed in advance between a substrate and a functional material layer that is a ground. Thus, it is possible to improve the crystallinity and crystalline orientation of a second wurtzite crystalline layer formed on the functional material layer.

Abstract: A piezoelectric sensor arranged so as to includes: a transparent piezoelectric element having a piezoelectric property; and a pair of transparent conductor film layers opposed to each other with the piezoelectric element therebetween, the transparent piezoelectric element and the transparent conductor film layers are formed between a pair of transparent substrates, opposed to each other, which serve as pressure transmission means. Consequently, the transparent piezoelectric sensor has an excellent durability. A piezoelectric sensor comprises a piezoelectric element with a piezoelectric property which is made of a piezoelectric material having no Curie point and has a dipole orientation degree of not less than 75%. Consequently, the piezoelectric sensor having an excellent durability and a simple structure is provided at low cost.

Abstract: A piezoelectric sensor arranged so as to includes: a transparent piezoelectric element having a piezoelectric property; and a pair of transparent conductor film layers opposed to each other with the piezoelectric element therebetween, the transparent piezoelectric element and the transparent conductor film layers are formed between a pair of transparent substrates, opposed to each other, which serve as pressure transmission means. Consequently, the transparent piezoelectric sensor has an excellent durability. A piezoelectric sensor comprises a piezoelectric element with a piezoelectric property which is made of a piezoelectric material having no Curie point and has a dipole orientation degree of not less than 75%. Consequently, the piezoelectric sensor having an excellent durability and a simple structure is provided at low cost.

Abstract: A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film. A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.

Abstract: The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.

Abstract: A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal.

Abstract: A stacked structure (1) includes an electrostriction layer (2) including an electric inductive distortion material and a stress light-emitting layer (3) including a stress light-emitting material. When applying a voltage to the electrostriction layer (2) in the stacked structure (1), the electric inductive distortion material deforms, thereby the electrostriction layer (2) deforms. The deformation of the electrostriction layer (2) causes an external force to act on the stress light-emitting material of the stress light-emitting layer (3), and the stress light-emitting layer (3) emits light, accordingly. That is, by applying the voltage to the stacked structure (1), the stacked structure (1) can emit the light.

Abstract: A spherical crystalline metal oxide particle is produced by introducing a metal ion-containing solution, which has been atomized, into an atmosphere that is kept at 1000° C. or more and under oxidizing condition, in order to concurrently dry and sinter the metal ion-containing solution. Moreover, As an apparatus for producing the particle, an apparatus is used, which is structured by connecting: (A) a heating apparatus for concurrently drying and sintering an atomized particulate, the heating apparatus (4) including multi channel atomizing apparatus (3) having a function of atomizing a metal ion-containing solution, and a function of sorting a size of the thus atomized particulate; and (B) an electrostatic particle collecting apparatus (5) for electrostatically collecting the particle that is thus produced by (A) and has a predetermined size.

Abstract: A thin pressure sensor includes: a pair of external electrodes, which are respectively made of conductive thin films that are respectively provided with piezoelectric layers on inner sides; and a single internal electrode, made of a conductive thin film, which is sealed between the pair of external electrodes, one of the pair of external electrodes having a conducting window that conducts to said internal electrode. The thin pressure sensor has a simple and thin structure with sufficient durability and mechanical strength.

Abstract: A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal.

Abstract: Disclosed is a high-sensitivity flexible ceramic sensor for detecting mechanical shocks and vibrations, which comprises a metal foil of a specified thickness as a substrate, a single-crystalline thin film of a piezoelectric ceramic material such as aluminum nitride and zinc oxide having a specified thickness formed on the substrate, a metallic electrode formed on the thin ceramic film and an external circuit connecting the metal foil and the electrode with insertion of an electric meter for measuring the piezoelectric voltage changes induced in the ceramic thin film.

Abstract: A thin pressure sensor includes: a pair of external electrodes, which are respectively made of conductive thin films that are respectively provided with piezoelectric layers on inner sides; and a single internal electrode, made of a conductive thin film, which is sealed between the pair of external electrodes, one of the pair of external electrodes having a conducting window that conducts to said internal electrode. The thin pressure sensor has a simple and thin structure with sufficient durability and mechanical strength.

Abstract: Disclosed is a high-sensitivity flexible ceramic sensor for detecting mechanical shocks and vibrations, which comprises a metal foil of a specified thickness as a substrate, a single-crystalline thin film of a piezoelectric ceramic material such as aluminum nitride and zinc oxide having a specified thickness formed on the substrate, a metallic electrode formed on the thin ceramic film and an external circuit connecting the metal foil and the electrode with insertion of an electric meter for measuring the piezoelectric voltage changes induced in the ceramic thin film.

Abstract: The present invention provides a novel electrostrictive material which has a large strain relative to an input electric field, is a non-lead material, and is low in temperature dependency and hysteresis, and a manufacturing method thereof. The electrostrictive material of the invention comprises a compound composed of two or more elements obtained by selecting one or more elements from the group consisting of Sr, Ba, Mg, Ca, Zn and Cd, and the group consisting of Al, Ga and Si, respectively, and oxygen; or a compound represented by MxAlyO(2x+3y)/2 (where, M represents one or more elements selected from the group consisting of Sr, Mg, Ca, Ba, Zn and Cd; and x and y take values each within a range from 1 to 20); or a compound achieved by adding one or more rare-earth or transition metal elements in an amount within a range from 0.001 to 20 mol. %.

Abstract: Disclosed is a high-sensitivity flexible ceramic sensor for detecting mechanical shocks and vibrations, which comprises a metal foil of a specified thickness as a substrate, a single-crystalline thin film of a piezoelectric ceramic material such as aluminum nitride and zinc oxide having a specified thickness formed on the substrate, a metallic electrode formed on the thin ceramic film and an external circuit connecting the metal foil and the electrode with insertion of an electric meter for measuring the piezoelectric voltage changes induced in the ceramic thin film.

Abstract: The present invention is a method for producing swellable or nonswellable fluorine mica at a relatively lower temperature by heating a powdery mixture comprising 10 to 35% by weight of an alkali silicofluoride as the main component optionally together with an alkali fluoride and the balance of talc. This fluorine mica is used for pigments, etc.