Patents by Inventor Hiroshi Tochimura

Hiroshi Tochimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing the same
    Patent number: 6822277
    Abstract: The present invention is characterized by including an electrode formed on surface of a semiconductor substrate, wherein said electrode includes a barrier layer consisting of amorphous or microcrystal expressed by the following expression: M1xM21-x (0<X<1; M1: Au, Pt, Ir, Pd, Os, Re, Rh, Ru, Cu, Co, Fe, Ni, V, Cr; M2: Ta, Ti, Zr, Hf, W, Y, Mo, Nb).
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: November 23, 2004
    Assignee: Rohm Co. Ltd.
    Inventors: Takashi Nakamura, Hiroshi Tochimura
  • Semiconductor device and method for manufacturing the same
    Publication number: 20020096737
    Abstract: The present invention is characterized by including an electrode formed on surface of a semiconductor substrate, wherein said electrode includes a barrier layer consisting of amorphous or microcrystal expressed by the following expression:
    Type: Application
    Filed: August 24, 2001
    Publication date: July 25, 2002
    Inventors: Takashi Nakamura, Hiroshi Tochimura