Patents by Inventor Hiroshi Tooyama

Hiroshi Tooyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7952074
    Abstract: A circuit pattern inspection method and an apparatus therefore, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Grant
    Filed: August 12, 2008
    Date of Patent: May 31, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Publication number: 20080302964
    Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Application
    Filed: August 12, 2008
    Publication date: December 11, 2008
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Patent number: 7417444
    Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: August 26, 2008
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Patent number: 7408760
    Abstract: During the writing operation, the wafer potential is dynamically detected and corrected. By doing so, the positional accuracy of the circuit patterns written on a wafer can be improved. After a contact resistance between a wafer and a earth pin is measured, the current flowing from the wafer to the ground potential via the earth pin is measured. Then, based on the measurement result, the potential difference is given between the wafer and the ground potential.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: August 5, 2008
    Assignees: Hitachi High-Technologies Corporation, Canon Kabushiki Kaisha
    Inventors: Sayaka Tanimoto, Yasunari Soda, Masakazu Sugaya, Hiroshi Tooyama, Takeshi Tsutsumi, Yasuhiro Someda
  • Patent number: 7026830
    Abstract: To make possible the in-line inspection of a pattern of an insulating material. A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.
    Type: Grant
    Filed: March 6, 2003
    Date of Patent: April 11, 2006
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Publication number: 20060056131
    Abstract: During the writing operation, the wafer potential is dynamically detected and corrected. By doing so, the positional accuracy of the circuit patterns written on a wafer can be improved. After a contact resistance between a wafer and a earth pin is measured, the current flowing from the wafer to the ground potential via the earth pin is measured. Then, based on the measurement result, the potential difference is given between the wafer and the ground potential.
    Type: Application
    Filed: September 9, 2005
    Publication date: March 16, 2006
    Inventors: Sayaka Tanimoto, Yasunari Soda, Masakazu Sugaya, Hiroshi Tooyama, Takeshi Tsutsumi, Yasuhiro Someda
  • Publication number: 20060043982
    Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Application
    Filed: November 9, 2005
    Publication date: March 2, 2006
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Publication number: 20030169060
    Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is radiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Application
    Filed: March 6, 2003
    Publication date: September 11, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Patent number: 6559663
    Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Grant
    Filed: October 25, 2001
    Date of Patent: May 6, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Publication number: 20020027440
    Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is radiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Application
    Filed: October 25, 2001
    Publication date: March 7, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Patent number: 6329826
    Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Grant
    Filed: March 14, 2000
    Date of Patent: December 11, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Patent number: 6172363
    Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
    Type: Grant
    Filed: March 4, 1997
    Date of Patent: January 9, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
  • Patent number: 5369396
    Abstract: An apparatus for detecting a liquid level includes a warning device for warning a low liquid level, and a regulator for controlling power supply to the warning device from a power source. The regulator comprises a switch for switching its condition in accordance with the liquid level. The ON condition of the switch indicates that the present liquid level is lower than a predetermined liquid level. The regulator further comprises a thermistor connected to the switch in series. The thermistor has a characteristic of decreasing the resistance value thereof, when a predetermined delay period of time as a function of atmospheric temperature has elapsed since the start of applying the voltage on the thermistor, synchronizing with turning the switch on. The low resistance value of the thermistor allows the power for activating the warning device to be supplied to its device, while the switch is turned on.
    Type: Grant
    Filed: May 7, 1993
    Date of Patent: November 29, 1994
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Nobuo Kurata, Hiroshi Tooyama
  • Patent number: 5001409
    Abstract: In an apparatus for measuring texture and characterization of the surface of a sample on the basis of the drive signal of a servo control circuit by allowing a probe-tip (1) to approach the sample (2) and subjecting the probe-tip (1) to servo control so that a current, which is generated by moving the probe-tip (1) on the sample surface and which flows between the probe-tip (1) and the sample (2), becomes constant, the present invention discloses a surface metrological apparatus comprising a circuit (11, 12) for correcting the texture and characterization of the sample by use of a current error of the measured value of the current described above from the set current value.
    Type: Grant
    Filed: June 7, 1989
    Date of Patent: March 19, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Sumio Hosaka, Shigeyuki Hosoki, Keiji Takata, Masatoshi Ohtake, Hiroshi Tooyama, Hitoshi Kondou
  • Patent number: 4541082
    Abstract: A device for optically tracking information recorded on an optical disc wherein a photodetector is disposed on the optical axis of an optical system for guiding diffracted waves to the photodetector. The origin of a fictitious X-Y coordinate system at the photodetector is placed on the above-mentioned optical axis, X- and Y-axes of the coordinate system are made parallel to and perpendicular to an information track having the information pits on the rotating recording medium, and the photodetector is divided into four equal parts. A first summation signal indicating the sum of output signals from the four parts of the photodetector is converted into a binary signal, and a difference signal between second summation signals each indicating the sum of output signals from a pair of photodetector parts facing each other with the origin of the coordinate system therebetween is converted into another binary signal.
    Type: Grant
    Filed: November 19, 1982
    Date of Patent: September 10, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Tatsuo Horikoshi, Seiji Yonezawa, Toshiaki Tsuyoshi, Hiroshi Tooyama, Masatoshi Otake