Abstract: According to one embodiment, a semiconductor device includes: a stacked body including an insulating layer, and a conductive layer containing molybdenum; an aluminum oxide layer provided between the insulating layer and the conductive layer; and a protective layer in contact with the aluminum oxide layer, containing one of carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer, and also in contact with the conductive layer.

Abstract: The vehicle control device performs a process of controlling the notification device so that the information on the specific driving assist is provided to the driver in a predetermined period after the time point at which the control of the own vehicle is started so that the specific driving assist among the plurality of types of driving assist is provided to the driver, and/or a process of changing a value assigned to a parameter as setting information of a function for providing the specific driving assist when the driver performs a predetermined operation within the predetermined period.

Abstract: A driving support apparatus includes a surrounding information acquisition device which acquires surrounding information, a steering information acquisition device which acquires steering information, a control unit which executes driving support control including at least one of pre-right/left-turn deceleration assist control or pre-right/left-turn warning control when a predetermined first execution condition is satisfied. When a precondition which is satisfied in a case in which an intersection is detected based on the surrounding information and steering operation is being performed by a driver based on the steering information is satisfied, the control unit determines whether or not the first execution condition is satisfied based on the steering operation being performed and traveling lane arrow information which is road arrow information of a traveling lane or adjacent lane arrow information which is road arrow information of an adjacent lane, both of which being stored in a storage device.

Abstract: An olefin-based polymer composition capable of forming a film that can be heat-sealed at a relatively low temperature and having good anti-blocking property in the film and a film containing the olefin-based polymer composition are provided. The olefin-based polymer composition contains an olefin-based polymer and satisfies the following requirements (1) to (3): (1): in temperature gradient interaction chromatography of the olefin-based polymer composition measured using a gel permeation chromatograph equipped with a graphite-packed column, an elution amount measured at 70° C. to 95° C. is 10.0 mass % to 28.0 mass % based on 100 mass % of an elution amount measured up to 160° C., (2): an amount of a cold xylene soluble component is 20.0 mass % or less, and (3): a melting point of the olefin-based polymer composition is 150° C. or lower.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).

Abstract: In one embodiment, a semiconductor device includes a first layer including a metal element. The device further includes a first insulator that is in contact with the first layer and includes silicon and oxygen. The device further includes a second layer that is in contact with the first insulator and includes molybdenum or tungsten.

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

Abstract: Provided is a driving support device (1) including: an operation sensor configured to acquire operation information that is information on an operation on a driving operation device included in an own vehicle; a periphery sensor configured to acquire peripheral information that is information on a target object existing in a periphery of the own vehicle; and a control device configured to execute deceleration support control of supporting a driving operation executed by a driver to decelerate the own vehicle when existence of a target object in front of the own vehicle is detected based on the peripheral information and a predetermined precondition relating to the target object and the own vehicle is satisfied.

Abstract: A semiconductor device includes a plurality of insulating layers, a plurality of conductive layers that are formed alternately with the plurality of insulating layers, an interlayer film, and a channel. The interlayer film is different from the conductive layer, has a crystal structure of a hexagonal crystal system, and is formed between at least one of the insulating layers and at least one of the conductive layers. The channel penetrates through the plurality of conductive layers, the interlayer film, and the plurality of insulating layers.

Abstract: According to one embodiment, a film forming method includes alternately performing a first process including at least two times of a first sequence and a second process including at least one time of a second sequence. The first sequence includes supplying a film forming gas into a film forming chamber, supplying a first purge gas into the film forming chamber, supplying a first reduction gas into the film forming chamber, and supplying a second purge gas into the film forming chamber, in order, and the second sequence includes supplying a second reduction gas into the film forming chamber, and supplying a third purge gas into the film forming chamber, in order.

Abstract: A driving support apparatus includes a surrounding information acquisition device which acquires surrounding information, a steering information acquisition device which acquires steering information, a control unit which executes driving support control including at least one of pre-right/left-turn deceleration assist control or pre-right/left-turn warning control when a predetermined first execution condition is satisfied. When a precondition which is satisfied in a case in which an intersection is detected based on the surrounding information and steering operation is being performed by a driver based on the steering information is satisfied, the control unit determines whether or not the first execution condition is satisfied based on the steering operation being performed and traveling lane arrow information which is road arrow information of a traveling lane or adjacent lane arrow information which is road arrow information of an adjacent lane, both of which being stored in a storage device.

Abstract: According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.

Abstract: Provided are a film having an excellent balance between heat seal strength and opening strength, a method of producing the film, and a bag obtained by heat-sealing the film. According to the present invention, there is provided a film containing a resin, wherein a resin density of the film is 860 kg/m3 or more and less than 900 kg/m3, and on at least one surface of the film, an arithmetic mean height Sa satisfies the following Expression [1]: 0.10 ?m?Sa?0.50 ?m??[1], and a minimum autocorrelation length Sal satisfies the following Expression [2]: 0.2 ?m?Sal?10.4 ?m??[2].

Abstract: A semiconductor device that can have an improved data retention characteristic is provided. A semiconductor device includes a stacked body and a memory pillar formed in a memory hole of the stacked body. The memory pillar has a structure in which a semiconductor portion 61b, a tunnel insulating film 62a, and a charge storage layer 62b are sequentially stacked. A block insulating film 53 is provided between the charge storage layer 62b and a conductive layer 52. The conductive layer 52 contains molybdenum. The block insulating film 53 includes a silicon oxide film 53a and an aluminum oxide film 53b. A region from the conductive layer 52 to the aluminum oxide film 53b contains chlorine, which prevents OH diffusion. The concentration of chlorine at a second portion closer to the aluminum oxide film 53b than a first portion in the conductive layer 52 is higher than the concentration of impurities at the first portion in the conductive layer.

Abstract: A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.

Abstract: A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

Abstract: Provided are a film having an excellent balance between heat seal strength and opening strength, a method of producing the film, and a bag obtained by heat-sealing the film. According to the present invention, there is provided a film containing a resin, wherein a resin density of the film is 860 kg/m3 or more and less than 900 kg/m3, and on at least one surface of the film, an arithmetic mean height Sa satisfies the following Expression [1]: 0.10 ?m?Sa?0.50 ?m??[1], and a minimum autocorrelation length Sal satisfies the following Expression [2]: 0.2 ?m?Sal?10.4 ?m??[2].

Abstract: According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.