Patents by Inventor Hiroshi Tsujimoto

Hiroshi Tsujimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210043431
    Abstract: In a plasma etching method for etching a target object by plasma in a state where a pressure in a processing container having a consumable member is maintained at a constant level, variation of time for temperature decrease of the consumable member from a first temperature to a second temperature lower than the first temperature or variation of speed of the temperature decrease of the consumable member from the first temperature to the second temperature is measured. Further, a degree of consumption of the consumable member is estimated from the variation of time or the variation of speed based on information on correlation between the variation of time or the variation of speed and the degree of consumption of the consumable member.
    Type: Application
    Filed: June 24, 2019
    Publication date: February 11, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Mohd Fairuz BIN BUDIMAN, Hiroshi TSUJIMOTO
  • Patent number: 10867778
    Abstract: A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: December 15, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Tsujimoto, Toshikatsu Tobana
  • Patent number: 10861675
    Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: December 8, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takao Funakubo, Hirofumi Haga, Shinichi Kozuka, Wataru Ozawa, Akihiro Sakamoto, Naoki Taniguchi, Hiroshi Tsujimoto, Kumiko Ono
  • Publication number: 20200312695
    Abstract: A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.
    Type: Application
    Filed: March 26, 2020
    Publication date: October 1, 2020
    Inventors: Toru TAKAHASHI, Hiroshi TSUJIMOTO, Nobuaki SHINDO, Shigeru YONEDA
  • Patent number: 10480978
    Abstract: A method according to an aspect includes outputting gas continuously from a flow rate controller, closing a valve, obtaining a first pressure rise characteristic, outputting the gas intermittently from the flow rate controller, closing the valve, obtaining a second pressure rise characteristic, obtaining a third pressure rise characteristic, obtaining a fourth pressure rise characteristic, obtaining a first required time required from the third pressure rise characteristic, obtaining a second required time from the fourth pressure rise characteristic, obtaining an estimated time until a predetermined pressure is reached, in a case where the intermittent output of the gas is performed assuming that there is no delay time, and obtaining a parameter representing a difference between the estimated time and the second required time.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: November 19, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kumiko Ono, Hiroshi Tsujimoto
  • Publication number: 20190295825
    Abstract: A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.
    Type: Application
    Filed: March 20, 2019
    Publication date: September 26, 2019
    Inventors: Hiroshi TSUJIMOTO, Toshikatsu TOBANA
  • Patent number: 10410840
    Abstract: A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus includes supplying the process gas by controlling a flow rate value of the gas to be a first value during a first period; supplying the process gas by controlling the flow rate value of the gas to be a second value smaller than the first value during a second period; supplying the process gas by controlling the flow rate value of the gas to be a third value greater than the first value during a third period; and supplying the process gas by controlling the flow rate value of the gas to be a fourth value smaller than the second value during a fourth period, wherein these steps are periodically repeated in a predetermined order.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: September 10, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Tomoyuki Mizutani, Hiroshi Tsujimoto
  • Publication number: 20190237305
    Abstract: In a method for applying a DC voltage to an electrode of a plasma processing apparatus, plasma of a gas is generated in an inner space of a chamber and an absolute value of a negative DC voltage applied from a DC power supply to the electrode that forms a part of the chamber or is provided in the inner space during the generation of the plasma is increased. A first voltage value is specified, the first voltage value being a voltage value measured at the electrode when a current starts to flow in the electrode during the increase of the absolute value of the negative DC voltage. A value of the DC voltage applied from the DC power supply to the electrode during the generation of the plasma is set to a second voltage value that is a sum of the first voltage value and a specified value.
    Type: Application
    Filed: January 25, 2019
    Publication date: August 1, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hiroshi TSUJIMOTO, Toshikatsu TOBANA
  • Publication number: 20190139744
    Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 9, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takao FUNAKUBO, Hirofumi HAGA, Shinichi KOZUKA, Wataru OZAWA, Akihiro SAKAMOTO, Naoki TANIGUCHI, Hiroshi TSUJIMOTO, Kumiko ONO
  • Patent number: 10269539
    Abstract: In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: April 23, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kumiko Ono, Hiroshi Tsujimoto, Koichi Nagami
  • Patent number: 10204763
    Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: February 12, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takao Funakubo, Hirofumi Haga, Shinichi Kozuka, Wataru Ozawa, Akihiro Sakamoto, Naoki Taniguchi, Hiroshi Tsujimoto, Kumiko Ono
  • Patent number: 10163607
    Abstract: A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to high frequency power applied in a given process, wherein the first heat input amount is calculated based on a data table, the data table being generated by measuring temperatures so as to find a first relationship between the high frequency power applied in the plasma processing apparatus and the heat input amount to the mounting table; controlling, based on an operation map, the temperature of at least one of the first heating mechanism and the cooling mechanism so that a first temperature difference between the cooling mechanism and the first heating mechanism is within a controllable range corresponding to the first heat input amount, wherein the temperature of the first heating mechanism is controllable upon the first temperature difference falling within the controllable.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: December 25, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Keigo Toyoda, Hiroshi Tsujimoto
  • Publication number: 20180286721
    Abstract: A method according to an aspect includes outputting gas continuously from a flow rate controller, closing a valve, obtaining a first pressure rise characteristic, outputting the gas intermittently from the flow rate controller, closing the valve, obtaining a second pressure rise characteristic, obtaining a third pressure rise characteristic, obtaining a fourth pressure rise characteristic, obtaining a first required time required from the third pressure rise characteristic, obtaining a second required time from the fourth pressure rise characteristic, obtaining an estimated time until a predetermined pressure is reached, in a case where the intermittent output of the gas is performed assuming that there is no delay time, and obtaining a parameter representing a difference between the estimated time and the second required time.
    Type: Application
    Filed: March 28, 2018
    Publication date: October 4, 2018
    Inventors: Kumiko ONO, Hiroshi TSUJIMOTO
  • Publication number: 20180218882
    Abstract: In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.
    Type: Application
    Filed: March 28, 2018
    Publication date: August 2, 2018
    Inventors: Kumiko Ono, Hiroshi Tsujimoto, Koichi Nagami
  • Publication number: 20180166257
    Abstract: In the exemplary embodiment, a method for supplying a gas is provided. This method includes: supplying a processing gas to each of a central gas inlet portion and a peripheral gas inlet portion through a first branch line and a second branch line; closing a valve at a downstream side in a gas line for an additional gas, and filling the additional gas in a tube between the valve and an upstream flow rate controller; opening the valve after filling the additional gas, and supplying a high frequency power to one of an upper electrode and a lower electrode from a high frequency power supply after opening the valve.
    Type: Application
    Filed: February 6, 2018
    Publication date: June 14, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tomoyuki MIZUTANI, Hiroshi TSUJIMOTO
  • Patent number: 9960016
    Abstract: In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: May 1, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kumiko Ono, Hiroshi Tsujimoto, Koichi Nagami
  • Patent number: 9947510
    Abstract: In the exemplary embodiment, a method for supplying a gas is provided. This method includes supplying a processing gas to each of a central gas inlet portion and a peripheral gas inlet portion through a first branch line and a second branch line; closing a valve at a downstream side in a gas line for an additional gas, and filling the additional gas in a tube between the valve and an upstream flow rate controller; opening the valve after filling the additional gas, and supplying a high frequency power to one of an upper electrode and a lower electrode from a high frequency power supply after opening the valve.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: April 17, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tomoyuki Mizutani, Hiroshi Tsujimoto
  • Patent number: 9904299
    Abstract: A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure P1 of a first gas supply pipe between the orifice and the control valve and a pressure P2 of a second gas supply pipe between the orifice and the second valve so as to satisfy P1>2×P2. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume V1 of the first gas supply pipe and a volume V2 of the second gas supply pipe have a relationship of V1/V2?9.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: February 27, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Kumiko Ono, Hiroshi Tsujimoto, Atsushi Sawachi, Norihiko Amikura, Norikazu Sasaki, Yoshitaka Kawaguchi
  • Patent number: 9818582
    Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: November 14, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiraku Murakami, Nobutaka Sasaki, Shigeru Senzaki, Takanori Banse, Hiroshi Tsujimoto, Keigo Toyoda
  • Publication number: 20170278675
    Abstract: In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.
    Type: Application
    Filed: March 21, 2017
    Publication date: September 28, 2017
    Inventors: Kumiko Ono, Hiroshi Tsujimoto, Koichi Nagami