Abstract: The virus stabilizer is a virus stabilizer comprising a gelatin hydrolysate and an aqueous medium, wherein the virus stabilizer contains the gelatin hydrolysate at not less than 1 mass % and not more than 20 mass %, the gelatin hydrolysate has a weight average molecular weight of not more than 10000, and the gelatin hydrolysate has an isoelectric point pH of not less than 4.0 and not more than 7.0.

Abstract: The present invention relates to a nucleic acid molecule encoding an RNA-guided DNA endonuclease, which is (a) a nucleic acid molecule encoding the RNA-guided DNA endonuclease comprising or consisting of the amino acid sequence of SEQ ID NO: 1 or 3; (b) a nucleic acid molecule comprising or consisting of the nucleotide sequence of SEQ ID NO: 2 or 4; (c) a nucleic acid molecule encoding a RNA-guided DNA endonuclease the amino acid sequence of which is at least 70% identical to the amino acid sequence of (a); preferably at least 80% identical, more preferably at least 90% identical, and most preferred at least 95% identical; (d) a nucleic acid molecule comprising or consisting of a nucleotide sequence which is at least 70% identical to the nucleotide sequence of (b), preferably at least 80% identical, more preferably at least 90% identical, and most preferred at least 95% identical; (e) a nucleic acid molecule which is degenerate with respect to the nucleic acid molecule of (d); or (f) a nucleic acid molecule c

Abstract: An acoustic processing device performs acoustic processing in a space having a first listening position and a second listening position apart from the first listening position. The acoustic processing device includes a first input unit, a first output unit, and a signal processing circuit. The first input unit receives a first sound source signal to be reproduced at the first listening position. The first sound source signal includes a first left-channel signal and a first right-channel signal. The first output unit outputs the first sound source signal to a first speaker group including a first speaker disposed near a place of a head of a listener at the first listening position. The signal processing circuit draws out a first common signal common to both the first left-channel signal and the first right-channel signal and outputs the first common signal to the first speaker.

Abstract: In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

Abstract: An acoustic processing device performs acoustic processing in a space having a first listening position and a second listening position apart from the first listening position. The acoustic processing device includes a first input unit, a first output unit, and a signal processing circuit. The first input unit receives a first sound source signal to be reproduced at the first listening position. The first sound source signal includes a first left-channel signal and a first right-channel signal. The first output unit outputs the first sound source signal to a first speaker group including a first speaker disposed near a place of a head of a listener at the first listening position. The signal processing circuit draws out a first common signal common to both the first left-channel signal and the first right-channel signal and outputs the first common signal to the first speaker.

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract: In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

Abstract: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

Abstract: To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. On the surface of a rewiring including a two-layer film in which a first Ni film is laminated on the top of a Cu film, a pad to which a wire is coupled is formed. The pad includes a two-layer film in which an Au film is laminated on the top of a second Ni film and formed integrally so as to cover the top surface and the side surface of the rewiring. Due to this, the area of contact between the rewiring and the pad increases, and therefore, the pad becomes difficult to be peeled off from the rewiring.

Abstract: The present invention provides an extremely useful and novel ?-galactoside-?2,6-sialyltransferase having an optimum reaction pH in a neutral to alkaline range, and a nucleic acid encoding the sialyltransferase. The present invention further provides a vector carrying a nucleic acid encoding the sialyltransferase, and a host cell transformed with the vector, as well as a method for producing a recombinant ?-galactoside-?2,6-sialyltransferase.

Abstract: The present invention provides a method of binding a protein to a carrier in such a way that the protein is not impaired in its function but can be allowed to act more efficiently than when it is bound directly. The method of the present invention for binding a protein to a carrier comprises: preparing a biotin-bound carrier; preparing a fusion protein having the protein bound to a tamavidin; and binding the protein to the carrier via tamavidin-biotin bonds.

Abstract: The present invention provides an extremely useful and novel ?-galactoside-?2,6-sialyltransferase having an optimum reaction pH in a neutral to alkaline range, and a nucleic acid encoding the sialyltransferase. The present invention further provides a vector carrying a nucleic acid encoding the sialyltransferase, and a host cell transformed with the vector, as well as a method for producing a recombinant ?-galactoside-?2,6-sialyltransferase.

Abstract: The present invention provides a novel protein having neuraminidase activity and/or ?-galactoside-?2,6-sialyltransferase activity and a nucleic acid encoding the protein. The present invention further provides a vector containing a nucleic acid encoding the protein, a host cell transformed with the vector, together with a method for producing a recombinant ?-galactoside-?2,6-sialyltransferase. The present invention also provides an antibody specifically recognizing the protein.

Abstract: A channel is formed as an asymmetric diffuser-shaped channel having a narrow channel on a diffuser inlet side and a wide channel on a diffuser outlet side. The narrow channel is communicated with a variable volume chamber which is provided therein with a piezoelectric element. Vibration generated by actuation of the piezoelectric element causes a pressure variation of a fluid in the variable volume chamber to generate a nozzle flow which in turn causes a smooth flow of the fluid from the wide channel to the narrow channel.

Abstract: A chopper type DC-DC converter includes a voltage converting circuit, a comparative wave generating circuit, a comparator group, and a switch control circuit. The voltage converting circuit converts a first voltage into a second voltage. The comparative wave generating circuit generates first and second comparative waves such that the voltage range of the first comparative wave is different from the voltage range of the second comparative wave. The comparator group generates a first comparison result signal indicating a result of comparison between the first comparative wave and an error signal indicating an error between the second voltage and target voltage and a second comparison result signal indicating a result of comparison between the second comparative wave and the error signal. The switch control circuit controls the voltage converting circuit based on the first and second comparison signals. The comparative wave generating circuit includes first and second comparative wave generating circuits.

Abstract: The present invention provides an extremely useful and novel ?-galactoside-?2,6-sialyltransferase having an optimum reaction pH in a neutral to alkaline range, and a nucleic acid encoding the sialyltransferase. The present invention further provides a vector carrying a nucleic acid encoding the sialyltransferase, and a host cell transformed with the vector, as well as a method for producing a recombinant ?-galactoside-?2,6-sialyltransferase.